公开(公告)号：US08928564B2

公开(公告)日：2015-01-06

申请号：US12944641

申请日：2010-11-11

申请人： Dong-Wook Park ,  Ki-Ju Im ,  Ki-Wook Kim ,  Yeon-Gon Mo ,  Hui-Won Yang

发明人： Dong-Wook Park ,  Ki-Ju Im ,  Ki-Wook Kim ,  Yeon-Gon Mo ,  Hui-Won Yang

IPC分类号： G09G3/30 ,  G09G5/00

CPC分类号： G09G3/30 ,  G09G3/3233 ,  G09G5/00 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/0223 ,  G09G2320/0295 ,  G09G2320/043 ,  G09G2320/048

摘要： A pixel circuit of a flat panel display device and a method for driving thereof are provided. The pixel circuit includes a first transistor having a first gate electrode coupled to a scan line, a second electrode coupled to a data line, a second gate electrode coupled to a controlling signal line, and a first electrode, a second transistor having a first gate electrode coupled to the first electrode of the first transistor, a second electrode coupled to a first voltage source, a second gate electrode coupled to the controlling signal line, and a first electrode, a capacitor coupled between the first gate electrode of the second transistor and the first electrode of the second transistor, and an organic light emitting diode coupled between the first electrode of the second transistor and a second voltage source, in which the threshold voltage of the first and second transistors may be controlled to the required level by supplying a controlling signal of a fixed voltage level to the second gate electrodes of the first and second transistors through the controlling signal line.

摘要翻译： 提供了一种平板显示装置的像素电路及其驱动方法。 像素电路包括第一晶体管，其具有耦合到扫描线的第一栅极电极，耦合到数据线的第二电极，耦合到控制信号线的第二栅电极和第一电极，具有第一栅极的第二晶体管 耦合到第一晶体管的第一电极的第二电极，耦合到第一电压源的第二电极，耦合到控制信号线的第二栅电极，以及耦合在第二晶体管的第一栅电极和第二电极之间的电容器， 第二晶体管的第一电极和耦合在第二晶体管的第一电极和第二电压源之间的有机发光二极管，其中第一和第二晶体管的阈值电压可以通过提供第一电极而被控制到所需的电平 通过控制信号线将固定电压电平的信号控制到第一和第二晶体管的第二栅电极。

公开(公告)号：US08728862B2

公开(公告)日：2014-05-20

申请号：US13462535

申请日：2012-05-02

申请人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

发明人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

IPC分类号： H01L21/16 ,  H01L21/00

CPC分类号： H01L29/7869

摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

摘要翻译： 薄膜晶体管，薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 形成在栅电极上的栅极绝缘膜; 形成在所述栅极绝缘膜上的活化层; 在活化层上形成包含化合物半导体氧化物的钝化层; 以及与激活层接触的源极和漏极。

公开(公告)号：US08491955B2

公开(公告)日：2013-07-23

申请号：US12620569

申请日：2009-11-17

申请人： Tae-Woong Kim ,  Dong-Un Jin ,  Hyun-Joong Chung ,  Jae-Seob Lee ,  Yeon-Gon Mo

发明人： Tae-Woong Kim ,  Dong-Un Jin ,  Hyun-Joong Chung ,  Jae-Seob Lee ,  Yeon-Gon Mo

IPC分类号： B05D5/12 ,  C23C16/00

CPC分类号： B32B37/025 ,  B32B38/0004 ,  B32B2310/0843 ,  B32B2379/08 ,  B32B2457/206 ,  G02F2001/13613 ,  H01L27/1218 ,  H01L51/003 ,  H01L51/56 ,  H01L2227/326 ,  H01L2251/5338 ,  Y10T428/24612

摘要： A method of manufacturing an electronic apparatus including a plastic substrate, which can facilitate in separating the electronic apparatus including the plastic substrate from a stage, an electronic apparatus manufactured using the method, and an apparatus including the stage for use in the method. The method includes: preparing a stage on which a plurality of island-shaped separation lubricators are arranged; disposing the plastic substrate on the stage; forming a device on the plastic substrate; and separating the plastic substrate from the stage.

摘要翻译： 一种制造电子设备的方法，该电子设备包括塑料基板，其可以有助于将包括塑料基板的电子设备与一个台架分开，使用该方法制造的电子设备以及包括该方法中使用的台架的设备。 该方法包括：准备多个岛形分离润滑器布置在其上的台阶; 将塑料基板放置在平台上; 在塑料基板上形成装置; 并将该塑料基板与该台分离。

公开(公告)号：US08193535B2

公开(公告)日：2012-06-05

申请号：US13276884

申请日：2011-10-19

申请人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

发明人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/76 ,  H01L31/112 ,  H01L29/12 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L29/7869

摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

摘要翻译： 薄膜晶体管，薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 形成在栅电极上的栅极绝缘膜; 形成在所述栅极绝缘膜上的活化层; 在活化层上形成包含化合物半导体氧化物的钝化层; 以及与激活层接触的源极和漏极。

公开(公告)号：US08168968B2

公开(公告)日：2012-05-01

申请号：US12826418

申请日：2010-06-29

申请人： Jin-Seong Park ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

发明人： Jin-Seong Park ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

IPC分类号： H01L29/786

CPC分类号： H01L29/7869

摘要： There is provided a thin film transistor exhibiting stable reliability and electrical characteristics by forming an active layer by adding material having a large difference of electronegativity from oxygen like Hf and an atomic radius similar to that of Zn or SN to an oxide semiconductor made of ZnSnO to adjust concentration of carrier and to enhance reliability of the oxide semiconductor, and an organic light emitting display device having the same.

摘要翻译： 提供了一种薄膜晶体管，其表现出稳定的可靠性和电特性，通过添加具有如Hf之类的氧的电负性差大的材料和类似于Zn或SN的原子半径的材料形成有源层到由ZnSnO制成的氧化物半导体， 调整载体的浓度并提高氧化物半导体的可靠性，以及具有该氧化物半导体的有机发光显示装置。

公开(公告)号：US08144086B2

公开(公告)日：2012-03-27

申请号：US12318409

申请日：2008-12-29

申请人： Hun-Jung Lee ,  Ki-Nyeng Kang ,  Yeon-Gon Mo

发明人： Hun-Jung Lee ,  Ki-Nyeng Kang ,  Yeon-Gon Mo

IPC分类号： G09G3/32

CPC分类号： H01L27/3265 ,  H01L27/1225 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/7869 ,  H01L2251/5323

摘要： An organic light emitting display device having a pixel unit including a plurality of scan lines, data lines and pixel power lines arranged in a matrix type and forming respective sub pixels in an intersection region of the plurality of scan lines, data lines and pixel power lines; a thin film transistor including a pad unit receiving signals to drive driving the respective sub pixels, a scan driver and a data driver supplying the signals to the plurality of scan lines and data lines through the pad unit, and non-pixel unit formed with a power supply line supplying power to the pixel powers line, the sub-pixel including an oxide semiconductor layer; a capacitor having a lower electrode and an upper electrode formed of a transparent conductive material; and an organic light emitting element electrically coupled to the thin transistor and disposed on the capacitor.

摘要翻译： 一种有机发光显示装置，具有像素单元，该像素单元包括多个扫描线，数据线和矩阵型的像素电力线，并且在多个扫描线，数据线和像素电力线的交叉区域中形成各个子像素 ; 薄膜晶体管，其包括接收信号以驱动驱动各个子像素的焊盘单元;扫描驱动器和数据驱动器，其通过焊盘单元向多条扫描线和数据线提供信号;以及非像素单元， 所述电源线向所述像素电力线供电，所述子像素包括氧化物半导体层; 电容器，具有由透明导电材料形成的下电极和上电极; 以及电耦合到薄晶体管并且设置在电容器上的有机发光元件。

公开(公告)号：US08017513B2

公开(公告)日：2011-09-13

申请号：US12219037

申请日：2008-07-15

申请人： Jong-han Jeong ,  Jae-kyeong Jeong ,  Jin-seong Park ,  Yeon-gon Mo ,  Hui-won Yang ,  Min-kyu Kim ,  Tae-kyung Ahn ,  Hyun-soo Shin ,  Hun Jung Lee

发明人： Jong-han Jeong ,  Jae-kyeong Jeong ,  Jin-seong Park ,  Yeon-gon Mo ,  Hui-won Yang ,  Min-kyu Kim ,  Tae-kyung Ahn ,  Hyun-soo Shin ,  Hun Jung Lee

IPC分类号： H01L21/28

CPC分类号： C23C14/086 ,  C23C14/3464 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

摘要： A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.

摘要翻译： 制造IGZO有源层的方法包括从第一靶标沉积包括In，Ga和Zn的离子，以及从具有不同原子组成的第二靶子和第一靶材沉积包含In的离子。 可以控制来自第二靶的离子的沉积，以将IGZO层中的In的原子％调节为约45原子％至约80原子％。

公开(公告)号：US07995023B2

公开(公告)日：2011-08-09

申请号：US11478169

申请日：2006-06-28

申请人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo ,  Keum Nam Kim

发明人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo ,  Keum Nam Kim

IPC分类号： G09G3/38

CPC分类号： G02F1/13458 ,  G02F1/13452 ,  G02F1/1362 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/3276 ,  H01L29/78648 ,  H01L51/52

摘要： A flat panel display and method for driving the same. The flat panel display includes a conductive substrate forming an image display unit having at least one thin film transistor and a pad unit including a plurality of terminals, wherein the conductive substrate is laminated with a plurality of insulating layers to form the image display unit and the pad unit; a substrate-exposing part for exposing the conductive substrate is formed by removing at least one area of the insulating layers formed on the pad unit; a system control panel for supplying a reverse bias voltage through the substrate-exposing part, wherein the system control panel is electrically connected with the pad unit; and a metal member for transferring the reverse bias voltage to the conductive substrate, wherein the metal member is formed between the substrate-exposing part and the system control panel.

摘要翻译： 一种平板显示器及其驱动方法。 平板显示器包括形成具有至少一个薄膜晶体管的图像显示单元的导电基板和包括多个端子的焊盘单元，其中导电基板层叠有多个绝缘层以形成图像显示单元，并且 垫单位 通过去除在衬垫单元上形成的绝缘层的至少一个区域来形成用于暴露导电衬底的衬底暴露部分; 用于通过所述衬底暴露部分提供反向偏置电压的系统控制面板，其中所述系统控制面板与所述衬垫单元电连接; 以及用于将所述反向偏置电压传送到所述导电基板的金属构件，其中所述金属构件形成在所述基板曝光部和所述系统控制面板之间。

公开(公告)号：US07994510B2

公开(公告)日：2011-08-09

申请号：US12318856

申请日：2009-01-09

申请人： Jong-Han Jeong ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Hui-Won Yang ,  Yeon-Gon Mo

发明人： Jong-Han Jeong ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Hui-Won Yang ,  Yeon-Gon Mo

IPC分类号： H01L27/14 ,  H01L21/20

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618

摘要： A thin film transistor is provided having an oxide semiconductor as an active layer, a method of manufacturing the thin film transistor and a flat panel display device having the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer isolated from the gate electrode by a gate insulating layer and including channel, source and drain regions; source and drain electrodes coupled to the source and drain regions, respectively; and an ohmic contact layer interposed between the source and drain regions and the source and drain electrodes. In the TFT, the ohmic contact layer is formed with the oxide semiconductor layer having a carrier concentration higher than those of the source and drain regions.

摘要翻译： 提供具有氧化物半导体作为有源层的薄膜晶体管，制造薄膜晶体管的方法和具有薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 通过栅极绝缘层与栅电极隔离并且包括沟道，源极和漏极区域的氧化物半导体层; 源极和漏极分别耦合到源极和漏极区域; 以及插入在源极和漏极区域以及源极和漏极之间的欧姆接触层。 在TFT中，欧姆接触层与载流子浓度高于源区和漏区的氧化物半导体层形成。

公开(公告)号：US07919396B2

公开(公告)日：2011-04-05

申请号：US12318915

申请日：2009-01-12

申请人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L27/3274 ,  H01L27/283 ,  H01L51/0017 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.

摘要翻译： 一种防止有机半导体层的表面被损坏并降低截止电流的有机薄膜晶体管，其制造方法和结合有机薄膜晶体管的有机发光器件。 有机薄膜晶体管包括基板，设置在基板上的源极和漏极，与源极和漏极接触的半导体层，并且包括沟道区，配置在半导体层上并具有与半导体层相同的图案的保护膜 所述保护膜包括激光吸收材料，设置在所述栅极与所述源极和漏极之间的栅极绝缘膜，设置在所述栅极绝缘膜上的栅极电极和布置在所述半导体层内部和所述保护膜内的分离图案， 所述分离图案适于限定半导体层的沟道区。