公开(公告)号：US20210280436A1

公开(公告)日：2021-09-09

申请号：US17327270

申请日：2021-05-21

申请人： EPISTAR CORPORATION

发明人： Min-Hsun HSIEH

IPC分类号： H01L21/48 ,  H01L23/00

摘要： An applying method includes the following steps. Firstly, a conductive adhesive including a plurality of conductive particles and an insulating binder is provided. Then, a carrier plate is provided. Then, a patterned adhesive is formed on the carrier plate by the conductive adhesive, wherein the patterned adhesive includes a first transferring portion. Then, a manufacturing device including a needle is provided. Then, the needle of the manufacturing device is moved to contact the first transferring portion. Then, the transferring portion is transferred to a board by the manufacturing device.

公开(公告)号：US11094814B2

公开(公告)日：2021-08-17

申请号：US15720564

申请日：2017-09-29

申请人： EPISTAR CORPORATION

发明人： Ya-Yu Yang ,  Shang-Ju Tu ,  Tsung-Cheng Chang ,  Chia-Cheng Liu

IPC分类号： H01L29/78 ,  H01L29/778 ,  B82Y99/00 ,  H01L29/20 ,  H01L21/02 ,  H01L29/207

摘要： A semiconductor power device includes a substrate, a buffer structure formed on the substrate, a barrier structure formed on the buffer structure, a channel layer formed on the barrier structure, and a barrier layer formed on the channel layer. The barrier structure includes a first functional layer on the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer. A material of the first back-barrier layer comprises Alx1Ga1-x1N, a material of the first functional layer comprises Alx2Ga1-x2N, 0

公开(公告)号：US11063087B2

公开(公告)日：2021-07-13

申请号：US16510388

申请日：2019-07-12

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing Chen ,  I-Lun Ma ,  Bo-Jiun Hu ,  Yu-Ling Lin ,  Chien-Chih Liao

IPC分类号： H01L27/15 ,  H01L33/24 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L33/42 ,  H01L33/00 ,  H01L33/30 ,  H01L33/12

摘要： A light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a trench formed between the first light-emitting unit and the second light-emitting unit, and exposing the substrate; and a connecting electrode including a first connecting part on the first light-emitting unit and connected to the first semiconductor layer of the first light-emitting unit, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

公开(公告)号：US20210210659A1

公开(公告)日：2021-07-08

申请号：US17206647

申请日：2021-03-19

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC分类号： H01L33/46 ,  H01L33/38

摘要： A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

公开(公告)号：US11054088B2

公开(公告)日：2021-07-06

申请号：US16258281

申请日：2019-01-25

申请人： EPISTAR CORPORATION

发明人： Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Been-Yu Liaw ,  Wei-Chiang Hu ,  Po-Hung Lai ,  Chun-Hung Liu ,  Shih-An Liao ,  Yu-His Sung ,  Ming-Chi Hsu

IPC分类号： F21K9/00 ,  F21K9/235 ,  H01L25/075 ,  F21K9/232 ,  H01L33/54 ,  H01L33/62 ,  F21Y115/10 ,  F21Y107/10 ,  F21Y107/30

摘要： This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a second side, a first electrode part disposed near the first side and extending to the second side, a bended part disposed near to the second side and spaced apart from the first electrode part, and a second electrode part extending from the bended part to the first side. No light-emitting diode unit is arranged on the second electrode part.

公开(公告)号：US20210202571A1

公开(公告)日：2021-07-01

申请号：US17138335

申请日：2020-12-30

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing CHEN ,  Chi-Shiang HSU ,  Yong-Yang CHEN

IPC分类号： H01L27/15

摘要： A light-emitting device comprises a substrate comprising a top surface; a plurality of light-emitting units formed on the top surface of the substrate comprising a first light-emitting unit, a second light-emitting unit, and one or a plurality of third light-emitting units, wherein each of the plurality of light-emitting units comprises a first semiconductor layer, an active layer and a second semiconductor layer; an insulating layer comprising a first insulating layer opening and a second insulating layer opening formed on each of the plurality of light-emitting units; a first extension electrode covering the first light-emitting unit, wherein the first extension electrode covers the first insulating layer opening on the first light-emitting unit without covering the second insulating layer opening on the first light-emitting unit; a second extension electrode covering the second light-emitting unit, wherein the second extension electrode covers the second insulating layer opening on the second light-emitting unit without covering the first insulating layer opening on the second light-emitting unit; a first electrode pad covering a part of the plurality of the light-emitting units; and a second electrode pad covering another part of the plurality of light-emitting units.

公开(公告)号：US20210183942A1

公开(公告)日：2021-06-17

申请号：US17170407

申请日：2021-02-08

申请人： EPISTAR CORPORATION

发明人： Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Schang-Jing HON ,  Sheng-Jie HSU ,  De-Shan KUO ,  Hsin-Ying WANG ,  Chiu-Lin YAO ,  Chien-Fu HUANG ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC分类号： H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44

摘要： A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.

公开(公告)号：US11019726B2

公开(公告)日：2021-05-25

申请号：US16451832

申请日：2019-06-25

申请人： EPISTAR CORPORATION

发明人： Min-Hsun Hsieh

IPC分类号： H05K1/00 ,  H05K1/18 ,  H01L33/62 ,  A61N5/06

摘要： A light-emitting device comprises a flexible carrier having a plurality of segmentations, a light-emitting unit and a connecting wire. The flexible carrier has a carrier part and an extendable part. The light-emitting unit is set on the carrier part. The extendable part has a plurality of segmentations. The flexible carrier has a continuous common surface.

公开(公告)号：US10978615B2

公开(公告)日：2021-04-13

申请号：US16828462

申请日：2020-03-24

申请人： EPISTAR CORPORATION

发明人： Min-Hsun Hsieh ,  Tzer-Perng Chen ,  Jen-Chau Wu ,  Yuh-Ren Shieh ,  Chuan-Cheng Tu

IPC分类号： H01L33/22 ,  H01L23/00 ,  H01L33/00 ,  H01L33/50 ,  H01L33/38 ,  H01L27/15

摘要： The present disclosure provides a light-emitting apparatus comprising a board having a plurality of first metal contacts and a plurality of second metal contacts on a top surface; a plurality of LEDs being bonded to the board, the each of the LEDs comprising a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer, an upper surface on the second cladding layer, a first metal layer, and a second metal layer, wherein the first metal layer and the second metal layer are between the active layer and the board; an opaque layer between the adjacent LEDs and comprising a polymer mixed with a plurality of inorganic particles; and an encapsulating layer on the upper surfaces and opposite to the board, wherein the encapsulating layer does not cover a side wall of the active layer; and an underfill material between the board and the plurality of LEDs, wherein the underfill material surrounds each of the first metal layer and the second metal layer.

公开(公告)号：US10971652B2

公开(公告)日：2021-04-06

申请号：US16513264

申请日：2019-07-16

申请人： EPISTAR CORPORATION

发明人： Chia-Ming Liu ,  Chang-Hua Hsieh ,  Yung-Chung Pan ,  Chang-Yu Tsai ,  Ching-Chung Hu ,  Ming-Pao Chen ,  Chi Shen ,  Wei-Chieh Lien

IPC分类号： H01L33/26 ,  H01L33/14 ,  H01L33/06 ,  H01L33/04 ,  H01L33/30 ,  H01L33/32 ,  H01L33/20

摘要： A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.