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公开(公告)号:US20190266716A1
公开(公告)日:2019-08-29
申请号:US16405996
申请日:2019-05-07
发明人: Alex Rothberg , Igor Lovchinsky , Jimmy Jia , Tomer Gafner , Matthew de Jonge , Jonathan M. Rothberg
IPC分类号: G06T7/00
摘要: Aspects of the technology described herein relate to techniques for calculating, during imaging, a quality of a sequence of images collected during the imaging. Calculating the quality of the sequence of images may include calculating a probability that a medical professional would use a given image for clinical evaluation and a confidence that an automated analysis segmentation performed on the given image is correct. Techniques described herein also include receiving a trigger to perform an automatic measurement on a sequence of images, calculating a quality of the sequence of images, determining whether the quality of the sequence of images exceeds a threshold quality, and performing the automatic measurement on the sequence of images based on determining that the quality of the sequence of images exceeds the threshold quality.
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72.
公开(公告)号:US20190210869A1
公开(公告)日:2019-07-11
申请号:US16290188
申请日:2019-03-01
发明人: Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
摘要: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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公开(公告)号:US20190180728A1
公开(公告)日:2019-06-13
申请号:US16271658
申请日:2019-02-08
IPC分类号: G10K11/02 , A61B8/00 , G10K11/165 , G10K11/168 , G10K11/30 , B06B1/02
摘要: The disclosed embodiments relate to a portable ultrasound device. Specifically, the disclosed embodiments relate to an acoustic lens positioned at an ultrasound probe. The acoustic lens may be configured for impedance matching and signal attenuation. In one embodiment, ultrasound signal attenuation is provided by forming an acoustic lens as a solid admixture of signal attenuating particles in a polymer matrix.
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74.
公开(公告)号:US20190160490A1
公开(公告)日:2019-05-30
申请号:US16245214
申请日:2019-01-10
发明人: Susan A. Alie , Keith G. Fife , Joseph Lutsky , David Grosjean
摘要: An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.
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公开(公告)号:US20190142389A1
公开(公告)日:2019-05-16
申请号:US16244739
申请日:2019-01-10
发明人: Amandeep Singh , Kailiang Chen , Tyler S. Ralston
摘要: An ultrasound circuit comprising a multi-stage trans-impedance amplifier (TIA) is described. The TIA is coupled to an ultrasonic transducer to amplify an electrical signal generated by the ultrasonic transducer in response to receiving an ultrasound signal. The TIA may include multiple stages, at least two of which operate with different supply voltages. The TIA may be followed by further processing circuitry configured to filter, amplify, and digitize the signal produced by the TIA.
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公开(公告)号:USD847738S1
公开(公告)日:2019-05-07
申请号:US29631744
申请日:2018-01-02
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公开(公告)号:US10231713B2
公开(公告)日:2019-03-19
申请号:US15263939
申请日:2016-09-13
发明人: Kailiang Chen , Keith G. Fife
摘要: A time gain compensation (TGC) circuit for an ultrasound device includes a first amplifier having an integrating capacitor and a control circuit configured to generate a TGC control signal that controls an integration time of the integrating capacitor, thereby controlling a gain of the first amplifier. The integration time is an amount of time an input signal is coupled to the first amplifier before the input signal is isolated from the first amplifier.
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公开(公告)号:US10228353B2
公开(公告)日:2019-03-12
申请号:US15648187
申请日:2017-07-12
摘要: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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79.
公开(公告)号:US20180262200A1
公开(公告)日:2018-09-13
申请号:US15979883
申请日:2018-05-15
发明人: Kailiang Chen , Tyler S. Ralston
CPC分类号: H03M1/002 , A61B8/4483 , A61B8/4494 , A61B8/54 , H03M1/125 , H03M1/462
摘要: An ultrasound device including an asynchronous successive approximation analog-to-digital converter and method are provided. The device includes at least one ultrasonic transducer, a plurality of asynchronous successive-approximation-register (SAR) analog-to-digital converters (ADC) coupled to the at least one ultrasonic transducer, at least one asynchronous SAR in the plurality having a sample and hold stage, a digital-to-analog converter (DAC), a comparator, and control circuitry, wherein a DAC update event following at least one bit conversion is synchronized to a corresponding DAC update event of at least one other ADC in the plurality of ADCs.
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80.
公开(公告)号:US20180243792A1
公开(公告)日:2018-08-30
申请号:US15905289
申请日:2018-02-26
CPC分类号: B06B1/0292 , B81B3/0086 , B81C1/00698 , B81C2201/0173 , B81C2201/115 , B81C2203/038 , G01N29/2406
摘要: Processes for fabricating capacitive micromachined ultrasonic transducers (CMUTs) are described, as are CMUTs of various doping configurations. An insulating layer separating conductive layers of a CMUT may be formed by forming the layer on a lightly doped epitaxial semiconductor layer. Dopants may be diffused from a semiconductor substrate into the epitaxial semiconductor layer, without diffusing into the insulating layer. CMUTs with different configurations of N-type and P-type doping are also described.
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