Abstract:
Apparatus and methods for mechanically cleaving a bonded wafer structure are disclosed. The apparatus and methods involve clamps that grip the bonded wafer structure and are actuated to cause the bonded structure to cleave.
Abstract:
A method for producing a product wafer having chips thereon, comprising the steps of: processing the first side of the product wafer bonding the product wafer with its first side onto a first rigid carrier wafer with a first intermediate layer consisting of one first adhesion layer applied at least on the edge side, processing a second side of the product wafer, bonding of the product wafer with its second side on a second rigid carrier wafer with a second intermediate layer consisting of one second adhesion layer applied at least on the edge side, characterized in that the first intermediate layer and the second intermediate layer are made different such that the first carrier wafer can be separated selectively before the second carrier wafer.
Abstract:
Provided is a laminated body comprising a substrate to be ground and a support, where the substrate is ground to a very small thickness and can then be separated from the support without damaging the substrate. One embodiment of the present invention is a laminated body comprising a substrate to be ground, a joining layer in contact with the substrate to be ground, a photothermal conversion layer comprising a light absorbing agent and a heat decomposable resin, and a light transmitting support. After grinding the substrate surface which is opposite that in contact with the joining layer, the laminated body is irradiated through the light transmitting layer and the photothermal conversion layer decomposes to separate the substrate and the light transmitting support.
Abstract:
An aligned workpiece is mounted on and held by a holding table, and a support board separating mechanism separates a support board from a semiconductor wafer. Herein, a double-faced adhesive tape is left on one of the support board and the semiconductor wafer. Either the support board or the semiconductor wafer on which the double-faced adhesive tape is left is transported to an adhesive tape peeling mechanism while being held by the holding table, and the double-faced adhesive tape is peeled off and removed from the surface of thereof. The separated semiconductor wafer and support board are collected independently.
Abstract:
During relative and horizontal movement of a mount frame, in which a semiconductor wafer with a protective tape is supported on a ring frame through a supporting adhesive tape, and a joining member, a position of an end edge of the protective tape is detected in a non-contact manner. Based on the detection result, a joining member is stopped in the position of the end edge of the protective tape and is moved close to the semiconductor wafer to press and bring a separation tape against and into contact with an end of the protective tape. In this state, the mount frame and the joining member are relatively and horizontally moved to join the separation tape onto the protective tape. Then, the mount frame and the joining member are relatively and horizontally moved to separate the separation tape together with the protective tape from a surface of the semiconductor wafer.
Abstract:
A first semiconductor element is bonded on a substrate. A complex film formed of integrated dicing film and adhesive film is affixed on a rear surface of a semiconductor wafer which is to be second semiconductor elements, the dicing film having a thickness within a range of not less than 50 μm nor more than 140 μm and a room temperature elastic modulus within a range of not less than 30 MPa nor more than 120 MPa, and the adhesive film having a thickness of 30 μm or more and a room temperature elastic modulus before curing within a range of not less than 500 MPa nor more than 1200 MPa. The semiconductor wafer together with the adhesive film is divided into the second semiconductor elements. The second semiconductor element is picked up from the dicing film to be bonded on the first semiconductor element.
Abstract:
Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.
Abstract:
Provided is a laminated body comprising a substrate to be ground and a support, where the substrate is ground to a very small thickness and can then be separated from the support without damaging the substrate. One embodiment of the present invention is a laminated body comprising a substrate to be ground, a joining layer in contact with the substrate to be ground, a photothermal conversion layer comprising a light absorbing agent and a heat decomposable resin, and a light transmitting support. After grinding the substrate surface which is opposite that in contact with the joining layer, the laminated body is irradiated through the light transmitting layer and the photothermal conversion layer decomposes to separate the substrate and the light transmitting support.
Abstract:
An annular convex portion is formed along an outer periphery of a back face of a wafer so as to surround a ground area in the back face. The annular convex portion is suction held by a holding table while being brought into close contact with the holding table, and fluid is supplied into a space defined between the back face of the wafer and the holding table; thus, an internal pressure in the space is increased. In this state, a separating adhesive tape is supplied toward a surface of a protective tape, and then a joining roller moves from a first end to a second end of the wafer while pressing a non-adhesive surface of the adhesive tape against the wafer; thus, the adhesive tape is joined to the surface of the protective tape. Then, a guide member moves from the first end to the second end of the wafer to guide the adhesive tape joined to the protective tape in a reverse direction; thus, the adhesive tape and the protective tape are simultaneously separated from the front face of the wafer.
Abstract:
The protective tape is joined at an optional angle with respect to the recesses formed between the patterns on the surface of the article, which has irregularities and on which patterns as a plurality of chips are formed in a matrix. After that, joining the adhesive tape to the surface of the protective tape at an optional angle with respect to recesses formed between patterns on the surface of the article, and separating the protective tape at an optional angle with respect to the recesses.