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233 条记录 (耗时 0.019 秒)

    Clathrate compounds, manufacture thereof, and thermoelectric materials, thermoelectric modules, semiconductor materials and hard materials based thereon
    61.
    发明申请
    Clathrate compounds, manufacture thereof, and thermoelectric materials, thermoelectric modules, semiconductor materials and hard materials based thereon 有权
    包覆化合物，其制造方法，热电材料，热电模块，半导体材料和基于其的硬质材料

    公开(公告)号：US20030197156A1

    公开(公告)日：2003-10-23

    申请号：US10214857

    申请日：2002-08-08

    发明人： Haruki Eguchi ,  Akihiko Suzuki ,  Satoshi Takahashi ,  Kaoru Miyahara ,  Tohru Tanaka ,  Shigemitsu Kihara ,  Kazuo Tsumuraya

    IPC分类号： H01C001/00

    CPC分类号： H01L35/14 ,  C01B33/06 ,  Y02P20/129 ,  Y02P20/13

    摘要： In high-tech fields such as electronics, the development of new high performance materials which differ from conventional materials has received much attention. An object of the present invention is to provide a clathrate compound which can be used as a thermoelectric material, a hard material, or a semiconductor material. Atoms of an element from group 4B of the periodic table are formed into a clathrate lattice, and a clathrate compound is then formed in which specified doping atoms are encapsulated within the clathrate lattice, and a portion of the atoms of the clathrate lattice are substituted with specified substitution atoms. Suitable doping atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 4A, group 5A, group 6A, and group 8, and suitable substitution atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 5A, group 6A, group 7A, group 5B, group 6B, group 7B, and group 8 of the periodic table. Suitable manufacturing methods include melt methods and sintering methods, and moreover intercalant intercalation compounds or the like may also be used as raw materials.

    摘要翻译： 在电子等高科技领域，与传统材料不同的新型高性能材料的开发受到重视。 本发明的目的是提供一种可用作热电材料，硬质材料或半导体材料的包合化合物。 元素周期表4B的元素的原子形成包合物晶格，然后形成包合物化合物，其中特定的掺杂原子被包封在包合物晶格内，并且包合物晶格的一部分原子被 指定的取代原子。 合适的掺杂原子是1A组，2A组，3A组，1B组，2B组，3B组，4A组，5A组，6A组和8组的原子，合适的取代原子是来自1A组，2A组， 3A组，1B组，2B组，3B组，5A组，6A组，7A组，5B组，6B组，7B组和8周期。 合适的制造方法包括熔融法和烧结方法，而且插入剂插层化合物等也可以用作原料。

    Clathrate structure for electronic and electro-optic applications
    62.
    发明授权
    Clathrate structure for electronic and electro-optic applications 失效
    电子和电光应用的包层结构

    公开(公告)号：US6103403A

    公开(公告)日：2000-08-15

    申请号：US856750

    申请日：1997-05-15

    申请人： Leonid Grigorian ,  Peter Eklund ,  Shaoli Fang

    发明人： Leonid Grigorian ,  Peter Eklund ,  Shaoli Fang

    IPC分类号： C01B33/06 ,  H01L21/316 ,  B32B9/04

    CPC分类号： C01B33/06 ,  H01L21/31695 ,  Y10T428/12674

    摘要： A method including the steps of (a) depositing a metal layer on a selected portion of a silicon substrate under a first set of predetermined conditions to form an metal silicide layer and an intermediate n-type silicon layer; and (b) exposing the metal silicide layer and the n-type silicon layer to a second set of predetermined conditions to form a silicon clathrate film on the selected portion of the silicon substrate, where the intermediate n-type silicon layer acts to bond the silicon clathrate to the silicon substrate to form a silicon clathrate structure.

    摘要翻译： 一种方法，包括以下步骤：（a）在第一组预定条件下在硅衬底的选定部分上沉积金属层以形成金属硅化物层和中间n型硅层; 和（b）将金属硅化物层和n型硅层暴露于第二组预定条件以在硅衬底的所选部分上形成硅包合膜，其中中间n型硅层用于将 硅层合到硅衬底以形成硅包合结构。

    Light induced production of ultrafine powders comprising metal silicide powder
    66.
    发明授权
    Light induced production of ultrafine powders comprising metal silicide powder 失效
    光诱导生产包含金属硅化物粉末的超细粉末

    公开(公告)号：US4776937A

    公开(公告)日：1988-10-11

    申请号：US765638

    申请日：1985-08-15

    申请人： Arunava Gupta ,  Gary A. West ,  James T. Yardley

    发明人： Arunava Gupta ,  Gary A. West ,  James T. Yardley

    IPC分类号： B01J12/02 ,  B01J19/12 ,  C01B33/06

    CPC分类号： B01J19/121 ,  B01J12/02 ,  C01B33/06

    摘要： A method of producing ultrafine powders comprising metal silicide powder and the products produced by the method are disclosed. The ultrafine powders comprising metal silicide powders are ideally suited to form stable colloidal suspensions which are used in the production of conductive metal silicide containing films. The process employs gaseous reactants comprising a metal halide and a silicon-containing compound. The reactants are exposed to high intensity light to produce ultrafine powders. In addition to the production of metal silicide powders, the ultrafine powders may also include silicon powder and metal subhalide powder. The ultrafine powders are particularly suited for use in VLSI and VVLSI production.

    摘要翻译： 公开了一种生产包含金属硅化物粉末的超细粉末和通过该方法制备的产品的方法。 包含金属硅化物粉末的超细粉末理想地适用于形成用于生产含导电金属硅化物的膜的稳定的胶体悬浮液。 该方法使用包含金属卤化物和含硅化合物的气态反应物。 将反应物暴露于高强度光下以产生超细粉末。 除了生产金属硅化物粉末之外，超细粉末还可以包括硅粉末和金属卤化物粉末。 超细粉末特别适用于VLSI和VVLSI生产。