公开(公告)号：US10332919B2

公开(公告)日：2019-06-25

申请号：US15744993

申请日：2017-07-17

Applicant: BOE Technology Group Co., Ltd.

Inventor： Quanhu Li ,  Ling Wang ,  Yongqian Li ,  Song Meng ,  Yue Wu

IPC: H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H01L51/50 ,  G09G3/3266 ,  G09G3/3275 ,  H01L21/77 ,  H01L23/50 ,  H01L27/02

Abstract: An organic light-emitting diode array substrate and a manufacturing method thereof and a display device are provided. The OLED array substrate includes a base substrate, a power line and a pixel structure disposed on the base substrate. The power line is disposed under the pixel structure and is at least partially overlapped with the pixel structure; an insulating layer is disposed between the power line and the pixel structure, and a first via hole structure is disposed in the insulating layer; and the power line is connected with a driving transistor in the pixel structure through the first via hole structure.

公开(公告)号：US10283072B2

公开(公告)日：2019-05-07

申请号：US15565907

申请日：2017-05-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yu Wang ,  Fei Yang ,  Yue Wu ,  Quanhu Li ,  Song Meng

IPC: G09G3/38 ,  G02F1/163

Abstract: A pixel circuit is provided which includes a data writing module, a drive module, a control module and an electrochromic device. The data writing module provides a data signal to the control terminal of the drive module under the control of a first control signal. The drive module drives the electrochromic device for color development or color fading according to a power supply voltage signal under the control of the data signal. The control module controls the conduction between the drive module and the electrochromic device on the basis of a second control signal, and the control module controls the conduction so that the conduction is realized later than the change in the power supply voltage signal. The pixel circuit effectively removes interference of the power supply voltage signal, avoids display fluctuations caused by the change in the power supply voltage signal, and further improves the display effect.

公开(公告)号：US20190132583A1

公开(公告)日：2019-05-02

申请号：US16097815

申请日：2018-02-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Quanhu Li ,  Yicheng Lin ,  Yu Wang ,  Yue Wu ,  Song Meng ,  Yongqian Li ,  Pan Xu

IPC: H04N13/398 ,  G09G3/3233 ,  G09G3/36 ,  H04N13/302

Abstract: A 3D display driving method, a 3D display driving device and a display device are provided. The 3D display driving method includes, during each display period: within a display duration (2n−1)th for a left-eye image of a left-eye image frame, scanning a first gate line in an nth group of gate lines, and within a part of the display duration (2n−1)th for the left-eye image, scanning a second gate line in the nth group of gate lines; and within a display duration (2n)th for a right-eye image of a right-eye image frame, scanning the second gate line in the nth group of gate lines, n being a positive integer smaller than or equal to M, and M being an integer greater than 1.

公开(公告)号：US20190130828A1

公开(公告)日：2019-05-02

申请号：US16050099

申请日：2018-07-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Quanhu Li ,  Ling Wang ,  Dongfang Yang ,  Guang Yan

IPC: G09G3/3233

Abstract: A control method for a pixel circuit, a control circuit for a pixel circuit and a display device are provided. A timing sequence of the pixel circuit includes a driving display stage and a non-display stage. The non-display stage includes a reverse bias time period. The control method includes: inputting, in the reverse bias time period, a first control signal to an input end of the pixel circuit to make both the light-emitting element and the driving transistor to be reverse biased.

公开(公告)号：US20190013339A1

公开(公告)日：2019-01-10

申请号：US15744993

申请日：2017-07-17

Applicant: BOE Technology Group Co., Ltd.

Inventor： Quanhu Li ,  Ling Wang ,  Yongqian Li ,  Song Meng ,  Yue Wu

IPC: H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L51/50 ,  G09G3/3266 ,  G09G3/3275 ,  H01L51/56

CPC classification number: H01L27/1251 ,  G09G3/3266 ,  G09G3/3275 ,  H01L21/77 ,  H01L23/50 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/3213 ,  H01L27/3246 ,  H01L27/3272 ,  H01L27/3276 ,  H01L51/5012 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56

Abstract: An organic light-emitting diode array substrate and a manufacturing method thereof and a display device are provided. The OLED array substrate includes a base substrate, a power line and a pixel structure disposed on the base substrate. The power line is disposed under the pixel structure and is at least partially overlapped with the pixel structure; an insulating layer is disposed between the power line and the pixel structure, and a first via hole structure is disposed in the insulating layer; and the power line is connected with a driving transistor in the pixel structure through the first via hole structure.

公开(公告)号：US10134338B2

公开(公告)日：2018-11-20

申请号：US15097534

申请日：2016-04-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Quanhu Li

IPC: G09G3/30 ,  G09G3/3266 ,  G11C19/28

Abstract: The present disclosure relates to display technology, and provides an inverter, a gate driving circuit and a display apparatus, capable of solving the problem that it is difficult to apply Scan Power technology in the display apparatus since a power signal outputted from the inverter has a small current. The inverter comprises: a current amplification module configured to amplify a current of the output terminal of the inverter based on a signal at a first clock signal terminal, a signal at a second clock signal terminal, a signal at a third clock signal terminal, a signal at a fourth clock signal terminal, a signal at a first input signal terminal, and a signal at a second input signal terminal, and to control the output terminal of the inverter to output a high level signal; and a pull-down module configured to control the output terminal of the inverter to output a low level signal. The inverter according to the present disclosure may be applied in a display apparatus employing the Scan Power technology.

公开(公告)号：US09954070B2

公开(公告)日：2018-04-24

申请号：US14913581

申请日：2015-07-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Longyan Wang ,  Yongqian Li ,  Kun Cao ,  Quanhu Li ,  Jingwen Yin ,  Baoxia Zhang ,  Cuili Gai ,  Zhongyuan Wu ,  Gang Wang

IPC: H01L29/10 ,  H01L29/04 ,  H01L29/45 ,  H01L29/786 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/443 ,  H01L21/4763 ,  H01L29/20 ,  H01L29/22 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/45 ,  H01L21/28575 ,  H01L21/32134 ,  H01L21/443 ,  H01L21/47635 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66522 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78681 ,  H01L29/7869

Abstract: A thin film transistor, a manufacturing method thereof, and a display device are provided. The thin film transistor includes a gate electrode (21), an active layer (23), a source electrode (241) and a drain electrode (242). The source electrode (241) and the drain electrode (242) are formed of at least two materials, the forming materials of the source electrode (241) and the drain electrode (242) can create a cell reaction in a corresponding etching solution so as to be etched, and material of the active layer (23) is not corroded by the etching solution. With the thin film transistor and manufacturing method thereof according to embodiments of the invention, a problem that an active layer is liable to be corroded in an etching procedure of a source electrode and a drain electrode can be solved, and thus the thin film transistor device can be manufactured by using a back channel etch process. Consequently, the process number for manufacture of the thin film transistor is decreased, and the manufacturing cost is saved.

公开(公告)号：US09881549B2

公开(公告)日：2018-01-30

申请号：US14912518

申请日：2015-09-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yongqian Li ,  Quanhu Li

IPC: G09G5/10 ,  G09G3/3233 ,  G09G3/20 ,  G09G3/3258

CPC classification number: G09G3/3233 ,  G09G3/2003 ,  G09G3/3258 ,  G09G2300/0426 ,  G09G2300/0804 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2320/0252 ,  G09G2320/0646

Abstract: An OLED pixel unit, a method of driving the same and an OLED display device are provided. The OLED pixel unit comprises M driving modules, a light emitting module comprising N light emitting units and a selecting module for performing gating so that the light emitting unit about to emit light in each frame of picture is connected with the corresponding driving module, wherein M

公开(公告)号：US20170193886A1

公开(公告)日：2017-07-06

申请号：US15216744

申请日：2016-07-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Cuili Gai ,  Quanhu Li

IPC: G09G3/20 ,  H01L27/02

CPC classification number: G09G3/2092 ,  G09G3/20 ,  G09G2330/04 ,  H01L27/027

Abstract: Disclosed is an electro-static discharge (ESD) protection unit, an array substrate, a display panel and a display device. The electro-static discharge protection unit comprises n stages of thin film transistors connected in series, wherein n≧2, a control electrode of each stage of thin film transistor is floating, a source electrode of a first stage of thin film transistor is connected with an electro-static generation terminal, a drain electrode of each of the first to n−1th stages of thin film transistors is connected with a source electrode of a next stage of thin film transistor, respectively, and a drain electrode of a nth stage of thin film transistor is connected with an electro-static discharge terminal; or wherein n≧3, a control electrode of each stage of thin film transistor is floating, a source electrode of a first stage of thin film transistor is connected with a first electro-static generation terminal, a drain electrode of each of the first to n−1th stages of thin film transistors is connected with a source electrode of a next stage of thin film transistor, respectively, and a drain electrode of a nth stage of thin film transistor is connected with a second electro-static generation terminal. The ESD protection unit can still protect signals in an electro-static generation terminal from being interfered when the thin film transistor adjacent to the electro-static generation terminal is broken down due to ESD, thereby avoiding failure due to ESD.