公开(公告)号：US10856847B2

公开(公告)日：2020-12-08

申请号：US15075942

申请日：2016-03-21

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Nevada J. Sanchez

IPC: A61B8/00 ,  A61B8/14 ,  A61N7/00 ,  G01S15/02 ,  G01S15/89 ,  H04R1/00 ,  B81C1/00 ,  G01S7/52 ,  B06B1/02 ,  A61N7/02 ,  A61B8/08

Abstract: To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein.

公开(公告)号：US20200254487A1

公开(公告)日：2020-08-13

申请号：US16784186

申请日：2020-02-06

Applicant: Butterfly Network, Inc.

Inventor： Lingyun Miao ,  Jianwei Liu ,  Jonathan M. Rothberg

IPC: B06B1/06 ,  A61B8/12 ,  A61B8/00

Abstract: A method of forming an ultrasonic transducer device includes forming a patterned metal electrode layer over a substrate, the patterned metal electrode layer comprising a lower layer and an upper layer formed on the lower layer; forming an insulation layer over the patterned metal electrode layer; and planarizing the insulation layer to the upper layer of the patterned metal electrode layer, wherein the upper layer comprises a electrically conductive material that serves as a chemical mechanical polishing (CMP) stop layer that has CMP selectivity with respect to the insulation layer and the lower layer, and wherein the upper layer has a CMP removal rate slower than that of the insulation layer.

公开(公告)号：US10177139B2

公开(公告)日：2019-01-08

申请号：US15865774

申请日：2018-01-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Susan A. Alie

IPC: H01L23/528 ,  B81B3/00 ,  H01L27/06 ,  B06B1/02 ,  B81B7/00 ,  B81C1/00 ,  H01L21/3213 ,  H01L21/56 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/522 ,  A61B8/00 ,  H01L27/092

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

公开(公告)号：US10175206B2

公开(公告)日：2019-01-08

申请号：US15689863

申请日：2017-08-29

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: G01N29/24 ,  B81C1/00 ,  B06B1/02 ,  A61B8/00 ,  B81B7/00

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20180257927A1

公开(公告)日：2018-09-13

申请号：US15453846

申请日：2017-03-08

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston ,  Jaime Scott Zahorian

IPC: B81C1/00 ,  B81B7/00 ,  B06B1/06 ,  B06B1/02

CPC classification number: B81C1/00238 ,  B06B1/0292 ,  B06B1/0622 ,  B81B7/008 ,  B81B2201/038 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/013 ,  B81C2203/0118 ,  B81C2203/0792

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20180130795A1

公开(公告)日：2018-05-10

申请号：US15865774

申请日：2018-01-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Susan A. Alie

IPC: H01L27/06 ,  H01L27/092 ,  A61B8/00 ,  B06B1/02 ,  B81B3/00 ,  H01L23/528 ,  H01L23/522 ,  H01L21/8238 ,  H01L21/768 ,  H01L21/56 ,  H01L21/3213 ,  B81C1/00 ,  B81B7/00

CPC classification number: H01L27/0617 ,  A61B8/00 ,  A61B8/4494 ,  B06B1/02 ,  B06B1/0292 ,  B06B2201/51 ,  B81B3/0021 ,  B81B7/0006 ,  B81B2201/0271 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L21/32134 ,  H01L21/56 ,  H01L21/768 ,  H01L21/76838 ,  H01L21/823871 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0688 ,  H01L27/092 ,  H01L2224/16225

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

公开(公告)号：US09944514B2

公开(公告)日：2018-04-17

申请号：US15626801

申请日：2017-06-19

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Nevada J. Sanchez

IPC: H01L29/84 ,  B81C1/00 ,  B06B1/02 ,  G01N29/24 ,  H04R19/00 ,  B81B7/00

CPC classification number: B81C1/00301 ,  B06B1/02 ,  B06B1/0292 ,  B81B7/007 ,  B81C1/00134 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2201/0195 ,  B81C2203/0735 ,  B81C2203/0771 ,  G01N29/2406 ,  H01L29/84 ,  H04R19/005

Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

公开(公告)号：US09910018B2

公开(公告)日：2018-03-06

申请号：US15177977

申请日：2016-06-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: H01L29/84 ,  H01L21/30 ,  G01N29/24 ,  B81C1/00 ,  B06B1/02 ,  A61B8/00 ,  B81B7/00

CPC classification number: G01N29/2406 ,  A61B8/4483 ,  B06B1/0292 ,  B81B7/007 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C1/00301 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/0792 ,  H01L2224/4813 ,  H01L2924/0002 ,  H01L2924/146 ,  H01L2924/1461

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US09910017B2

公开(公告)日：2018-03-06

申请号：US15177899

申请日：2016-06-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: H01L21/00 ,  H01L21/30 ,  G01N29/24 ,  B81C1/00 ,  B06B1/02 ,  A61B8/00 ,  B81B7/00

CPC classification number: G01N29/2406 ,  A61B8/4483 ,  B06B1/0292 ,  B81B7/007 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C1/00301 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/0792 ,  H01L2224/4813 ,  H01L2924/0002 ,  H01L2924/146 ,  H01L2924/1461

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20180003678A1

公开(公告)日：2018-01-04

申请号：US15689863

申请日：2017-08-29

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: G01N29/24 ,  B81C1/00 ,  A61B8/00 ,  B06B1/02 ,  B81B7/00

CPC classification number: G01N29/2406 ,  A61B8/4483 ,  B06B1/0292 ,  B81B7/007 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C1/00301 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/0792 ,  H01L2224/4813 ,  H01L2924/0002 ,  H01L2924/146 ,  H01L2924/1461

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.