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    Self-cleaning etch process
    61.
    发明授权
    Self-cleaning etch process 失效
    自清洁蚀刻工艺

    公开(公告)号：US06699399B1

    公开(公告)日：2004-03-02

    申请号：US09657793

    申请日：2000-09-08

    Applicant: Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

    Inventor： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

    IPC: C23F400

    CPC classification number: H01L21/02071 ,  Y10S438/905

    Abstract: A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.

    Abstract translation: 用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体 使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除 基本上所有由工艺气体沉积的蚀刻残留物。 本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

    Plasma reactor with dynamic RF inductive and capacitive coupling control
    62.
    发明授权
    Plasma reactor with dynamic RF inductive and capacitive coupling control 失效
    具有动态RF感应和电容耦合控制的等离子体电抗器

    公开(公告)号：US06447636B1

    公开(公告)日：2002-09-10

    申请号：US09505578

    申请日：2000-02-16

    Applicant: Xue-Yu Qian ,  Zhi-Wen Sun ,  Maocheng Li ,  John Holland ,  Arthur H. Sato ,  Valentin N. Todorov ,  Patrick L. Leahey ,  Robert E. Ryan

    Inventor： Xue-Yu Qian ,  Zhi-Wen Sun ,  Maocheng Li ,  John Holland ,  Arthur H. Sato ,  Valentin N. Todorov ,  Patrick L. Leahey ,  Robert E. Ryan

    IPC: H05H100

    CPC classification number: H01J37/32009 ,  H01J37/32082 ,  H01J37/3299 ,  H05H1/46

    Abstract: The invention provides a system and a method for dynamic RF inductive and capacitive coupling control to improve plasma substrate processing, as well as for achieving contamination and defect reduction. A plasma reactor includes a substrate support disposed in a chamber. An RF coil is disposed adjacent the chamber for inductively coupling RF energy into the chamber. An electrode is disposed adjacent the chamber and has a voltage for capacitively coupling energy into the chamber. The electrode is spaced from the substrate support and the RF coil. An electrode adjusting member is coupled with the electrode for dynamically adjusting the voltage in the electrode to vary the capacitive coupling for improved plasma ignition and plasma stability. A Faraday shield may be placed between the RF coil and the plasma process region in the chamber to suppress capacitive coupling of the RF coil. Sensors may be provided to monitor the amounts of inductive coupling and capacitive coupling to provide feedback to a controller which is used to adjust the inductive coupling and capacitive coupling in real time to stabilize the plasma and achieve improved processing.

    Abstract translation: 本发明提供了用于动态RF感应和电容耦合控制以改善等离子体基板处理以及实现污染和缺陷减少的系统和方法。 等离子体反应器包括设置在室中的基板支撑件。 射频线圈邻近该腔室设置，用于将射频能量感应耦合到腔室中。 电极邻近该腔室设置并且具有用于将能量电容耦合到腔室中的电压。 电极与衬底支架和RF线圈间隔开。 电极调节构件与电极耦合以动态地调节电极中的电压，以改变电容耦合以改善等离子体点火和等离子体稳定性。 法拉第屏蔽可以放置在RF线圈和腔室中的等离子体处理区域之间，以抑制RF线圈的电容耦合。 可以提供传感器来监测电感耦合和电容耦合的量以向控制器提供反馈，该控制器用于实时调整电感耦合和电容耦合以稳定等离子体并实现改进的处理。

    Treatment of etching chambers using activated cleaning gas
    63.
    发明授权
    Treatment of etching chambers using activated cleaning gas 失效
    使用活性清洁气体处理蚀刻室

    公开(公告)号：US06379575B1

    公开(公告)日：2002-04-30

    申请号：US08955181

    申请日：1997-10-21

    Applicant: Gerald Zheyao Yin ,  Xue-Yu Qian ,  Patrick L. Leahey ,  Jonathan D. Mohn ,  Waiching Chow ,  Arthur Y. Chen ,  Zhi-Wen Sun ,  Brian K. Hatcher

    Inventor： Gerald Zheyao Yin ,  Xue-Yu Qian ,  Patrick L. Leahey ,  Jonathan D. Mohn ,  Waiching Chow ,  Arthur Y. Chen ,  Zhi-Wen Sun ,  Brian K. Hatcher

    IPC: H01L21302

    CPC classification number: C04B41/009 ,  B08B7/0035 ,  C04B41/5346 ,  C04B41/91 ,  C23C16/4405 ,  H01J37/32862 ,  Y10S438/905 ,  C04B41/0027 ,  C04B41/0045 ,  C04B35/00

    Abstract: An apparatus 20 and process for treating and conditioning an etching chamber 30, and cleaning a thin, non-homogeneous, etch residue on the walls 45 and components of the etching chamber 30. In the etching step, a substrate 25 is etched in the etching chamber 30 to deposit a thin etch residue layer on the surfaces of the walls and components in the chamber. In the cleaning step, cleaning gas is introduced into a remote chamber 40 adjacent to the etching chamber 30, and microwave or RF energy is applied inside the remote chamber to form an activated cleaning gas. A short burst of activated cleaning gas at a high flow rate is introduced into the etching chamber 30 to clean the etch residue on the walls 45 and components of the etching chamber. The method is particularly useful for cleaning etch residue that is chemically adhered to ceramic surfaces in the chamber, for example surfaces comprising aluminum nitride, boron carbide, boron nitride, diamond, silicon oxide, silicon carbide, silicon nitride, titanium oxide, titanium carbide, yttrium oxide, zirconium oxide, or mixtures thereof.

    Abstract translation: 一种用于处理和调理蚀刻室30以及清洁壁45和蚀刻室30的部件上的薄的非均匀蚀刻残余物的方法20。在蚀刻步骤中，在蚀刻中蚀刻衬底25 室30，以在室中的壁和部件的表面上沉积薄的蚀刻残留层。 在清洁步骤中，将清洁气体引入邻近蚀刻室30的远程室40中，并且在远程室内部施加微波或RF能量以形成活化的清洁气体。 将高速流动的短时间的活性清洁气体引入蚀刻室30中以清洁壁45上的蚀刻残留物和蚀刻室的部件。 该方法特别可用于清洁化学附着在室中的陶瓷表面的蚀刻残渣，例如包括氮化铝，碳化硼，氮化硼，金刚石，氧化硅，碳化硅，氮化硅，氧化钛，碳化钛， 氧化钇，氧化锆或其混合物。

    Methods for forming nickel oxide films for use with resistive switching memory devices
    70.
    发明授权
    Methods for forming nickel oxide films for use with resistive switching memory devices 有权
    用于形成用于电阻式开关存储器件的氧化镍膜的方法

    公开(公告)号：US08283214B1

    公开(公告)日：2012-10-09

    申请号：US11963656

    申请日：2007-12-21

    Applicant: Zhi-Wen Sun ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

    Inventor： Zhi-Wen Sun ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

    IPC: H01L21/20 ,  H01L21/00 ,  H01L21/16 ,  H01L21/8229

    CPC classification number: H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

    Abstract: Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH)2 film on the substrate, where the forming the Ni(OH)2 occurs at the cathode; and annealing the Ni(OH)2 film to form the NiO film, where the NiO film forms a portion of a resistive switching memory element. In some embodiments, methods further include forming a top electrode on the NiO film and before the forming the Ni(OH)2 film, pre-treating the substrate. In some embodiments, methods are presented where the bottom electrode and the top electrode are a conductive material such as: Ni, Pt, Ir, Ti, Al, Cu, Co, Ru, Rh, a Ni alloy, a Pt alloy, an Ir alloy, a Ti alloy, an Al alloy, a Cu alloy, a Co alloy, an Ru alloy, and an Rh alloy.

    Abstract translation: 在电阻式切换存储装置使用的基板上形成NiO膜的方法包括：制备镍离子溶液; 接收衬底，其中衬底包括底部电极，用作阴极的底部电极; 在衬底上形成Ni（OH）2膜，其中在阴极处形成Ni（OH）2; 并且还原Ni（OH）2膜以形成NiO膜，其中NiO膜形成电阻式开关存储元件的一部分。 在一些实施例中，方法还包括在NiO膜上形成顶部电极，并且在形成Ni（OH）2膜之前，预处理衬底。 在一些实施例中，呈现了底部电极和顶部电极为导电材料的方法，例如：Ni，Pt，Ir，Ti，Al，Cu，Co，Ru，Rh，Ni合金，Pt合金，Ir 合金，Ti合金，Al合金，Cu合金，Co合金，Ru合金和Rh合金。

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