RECLINING APPARATUS
    61.
    发明申请
    RECLINING APPARATUS 审中-公开
    装卸设备

    公开(公告)号:US20080217984A1

    公开(公告)日:2008-09-11

    申请号:US11683080

    申请日:2007-03-07

    Applicant: Yu-Hong Lin

    Inventor: Yu-Hong Lin

    CPC classification number: A47C1/026

    Abstract: A reclining apparatus includes a platform and a pivotal element pivotally connected to the platform. A positioning element is movably mounted on the pivotal element and formed with apertures in two rows so that each of the apertures is located on a different level. A locking device includes two latches and an adjusting element. A selective one of the latches can be inserted in one of the apertures in a related one of the rows. The adjusting element is connected to the latches so that the adjusting element is operable to move the latches.

    Abstract translation: 倾斜装置包括平台和枢转地连接到平台的枢转元件。 定位元件可移动地安装在枢转元件上并形成有两排的孔,使得每个孔位于不同的水平面上。 锁定装置包括两个闩锁和调节元件。 可选择的一个闩锁可插入相关行中的一个孔中。 调节元件连接到闩锁,使得调节元件可操作以移动闩锁。

    Preparation of manganese oxide-cerium oxide-supported nano-gold catalyst and the application thereof
    62.
    发明申请
    Preparation of manganese oxide-cerium oxide-supported nano-gold catalyst and the application thereof 审中-公开
    氧化铈 - 氧化铈负载的纳米金催化剂的制备及其应用

    公开(公告)号:US20080193354A1

    公开(公告)日:2008-08-14

    申请号:US11979396

    申请日:2007-11-02

    Abstract: This present invention provides the preparation of a manganese oxide-cerium oxide-supported nano-gold catalyst and a process for subjecting carbon monoxide and oxygen to interaction resulting in the formation of carbon dioxide in a hydrogen-rich environment by a manganese oxide-cerium oxide-supported nano-gold catalyst to remove carbon monoxide in hydrogen stream. The size of the nano-gold particle is less than 5 nm and supported on mixed oxides MnO2/CeO2 in various molar ratios. Preferential oxidation of CO in the presence of CO, O2 and H2 by the manganese oxide-cerium oxide-supported nano-gold catalyst is carried out in a fixed-bed reactor in the process of the present invention. The CO/O2 molar ratio is in the range of 0.5 to 3. The manganese oxide-cerium oxide-supported nano-gold catalyst of the present invention is applied to reduce CO concentration in hydrogen steam to less than 100 ppm to prevent CO from contaminating the electrodes of a fuel cell.

    Abstract translation: 本发明提供了一种氧化锰 - 氧化铈负载的纳米金催化剂的制备方法和一氧化碳和氧气相互作用的方法,从而在富氧环境中由氧化锰 - 氧化铈形成二氧化碳 支持的纳米金催化剂以除去氢气流中的一氧化碳。 纳米金颗粒的尺寸小于5nm,并以各种摩尔比负载在混合氧化物MnO 2 / CeO 2 2上。 在氧化铈 - 氧化铈负载的纳米金催化剂的CO 2 O 2和H 2 2存在下CO的优先氧化在固定床 反应器在本发明的方法中。 CO / O 2摩尔比在0.5-3范围内。本发明的氧化锰 - 二氧化铈负载的纳米金催化剂用于将氢蒸气中的CO浓度降至更低 超过100ppm以防止CO污染燃料电池的电极。

    DAMASCENE REPLACEMENT METAL GATE PROCESS WITH CONTROLLED GATE PROFILE AND LENGTH USING Si1-xGex AS SACRIFICIAL MATERIAL
    63.
    发明申请
    DAMASCENE REPLACEMENT METAL GATE PROCESS WITH CONTROLLED GATE PROFILE AND LENGTH USING Si1-xGex AS SACRIFICIAL MATERIAL 审中-公开
    使用Si1-xGex作为材料的具有控制门型材和长度的金属浇注过程

    公开(公告)号:US20080150090A1

    公开(公告)日:2008-06-26

    申请号:US12021728

    申请日:2008-01-29

    Abstract: A method of forming a metal gate in a wafer. PolySi1-xGex and polysilicon are used to form a tapered groove. Gate oxide, PolySi1-xGex, and polysilicon is deposited on a wafer. A resist pattern is formed. A portion of the polysilicon, PolySi1-xGex, and gate oxide is removed to provide a tapered profile. The resist is removed; a dielectric liner is deposited, and then at least a portion of the dielectric liner is removed, thereby exposing the polysilicon and leaving the dielectric liner in contact with the polysilicon, PolySi1-xGex, and gate oxide. A dielectric is deposited, and a portion is removed thereby exposing the polysilicon. The polysilicon, PolySi1-xGex, and gate oxide is removed from inside the dielectric liner, thereby leaving a tapered gate groove. Metal is then deposited in the groove.

    Abstract translation: 一种在晶片中形成金属栅极的方法。 多晶硅1-x x Ge x S和多晶硅用于形成锥形槽。 栅极氧化物,多晶硅1-x x Ge x,并且多晶硅沉积在晶片上。 形成抗蚀剂图案。 去除多晶硅的一部分,多晶硅1-x N x N x N和栅极氧化物以提供锥形轮廓。 去除抗蚀剂; 沉积电介质衬垫,然后去除电介质衬垫的至少一部分,从而暴露多晶硅并使电介质衬垫与多晶硅接触,多晶硅1-x Ge x 和/或栅极氧化物。 沉积电介质,一部分被去除,从而暴露多晶硅。 从电介质衬垫的内部去除多晶硅,多晶硅1 x x Ge x x和栅极氧化物,从而留下锥形栅极沟槽。 然后将金属沉积在凹槽中。

    SYSTEM AND METHOD FOR MANAGING RECEIPTS OF AN E-FILING PATENT APPLICATION
    64.
    发明申请
    SYSTEM AND METHOD FOR MANAGING RECEIPTS OF AN E-FILING PATENT APPLICATION 审中-公开
    管理电子申请专利申请的收据的系统和方法

    公开(公告)号:US20080147426A1

    公开(公告)日:2008-06-19

    申请号:US11838241

    申请日:2007-08-14

    CPC classification number: G06Q10/00 G06Q50/184

    Abstract: A method for managing receipts of an e-filing patent application is disclosed. The method includes: receiving one or more receipts from a patent office website via the Internet when a patent application is filed in the patent office electronically; uploading the one or more receipts to a file server; obtaining information corresponding to keywords of the one or more receipts; and updating information of the patent application in a database server connected to the file server according to the information corresponding to the keywords. A related system is also disclosed.

    Abstract translation: 公开了一种用于管理电子申请专利申请的收据的方法。 该方法包括:当专利申请以电子方式提交专利局时,通过因特网从专利局网站接收一个或多个收据; 将一个或多个收据上传到文件服务器; 获取与所述一个或多个收据的关键词对应的信息; 以及根据与关键词相对应的信息,在连接到文件服务器的数据库服务器中更新专利申请的信息。 还公开了相关系统。

    SYSTEM AND METHOD FOR EDITING CONTRACT CLAUSES IN STATIC WEB PAGES
    65.
    发明申请
    SYSTEM AND METHOD FOR EDITING CONTRACT CLAUSES IN STATIC WEB PAGES 审中-公开
    用于在静态网页中编辑合同条款的系统和方法

    公开(公告)号:US20080077641A1

    公开(公告)日:2008-03-27

    申请号:US11770752

    申请日:2007-06-29

    CPC classification number: G06F17/24 G06F16/958

    Abstract: A system for editing contract clauses in static web pages is provided. The system includes a database and a web server. The web server includes: a contract reading module for reading a contract in a static web page on the web server; a clause writing module for writing a selected clause to be edited into the database; a clause editing module for providing an edit textbox to edit the selected clause; and an updating module for updating database and the contract in the static web page after editing. A related method is also provided.

    Abstract translation: 提供了一种在静态网页中编辑合同条款的系统。 该系统包括数据库和Web服务器。 Web服务器包括:用于在web服务器上的静态网页中阅读合同的合同读取模块; 用于将要编辑的选定子句写入数据库的子句写入模块; 用于提供编辑文本框以编辑所选择的子句的子句编辑模块; 以及用于在编辑之后更新数据库和静态网页中的合同的更新模块。 还提供了相关的方法。

    SYSTEM AND METHOD FOR AUTOMATICALLY SIGNING ELECTRONIC DOCUMENTS
    66.
    发明申请
    SYSTEM AND METHOD FOR AUTOMATICALLY SIGNING ELECTRONIC DOCUMENTS 审中-公开
    用于自动签名电子文件的系统和方法

    公开(公告)号:US20080046743A1

    公开(公告)日:2008-02-21

    申请号:US11608803

    申请日:2006-12-09

    CPC classification number: H04L9/321 H04L9/3247 H04L9/3263

    Abstract: A computer-based method for automatically signing electronic documents is disclosed. The method includes the steps of: creating an electronic document, and notifying a specified signer to digitally sign the electronic document; confirming whether or not to digitally sign the electronic document; obtaining a copy of a digital certificate of the specified signer if it is confirmed to digitally sign the electronic document, the digital certificate comprising a private key; verifying the identity of the specified signer according to the digital certificate; generating a message digest of the electronic document if the identity of the specified signer has been verified; and encrypting the message digest with the private key thereby yielding a digital signature of the electronic document. A related system is also disclosed.

    Abstract translation: 公开了一种用于自动签名电子文档的基于计算机的方法。 该方法包括以下步骤:创建电子文档,并通知指定的签名者对电子文档进行数字签名; 确认是否对电子文件进行数字签名; 如果确认对电子文件进行数字签名,则获得指定签署者的数字证书的副本,该数字证书包括私钥; 根据数字证书验证指定签名者的身份; 如果指定的签名人的身份已经被验证,则生成电子文档的消息摘要; 并用私钥加密消息摘要,从而产生电子文档的数字签名。 还公开了相关系统。

    Process for improving the reliability of interconnect structures and resulting structure
    68.
    发明申请
    Process for improving the reliability of interconnect structures and resulting structure 有权
    提高互连结构和结构结构可靠性的方法

    公开(公告)号:US20080014741A1

    公开(公告)日:2008-01-17

    申请号:US11487741

    申请日:2006-07-17

    Abstract: An interconnect structure of an integrated circuit having improved reliability and a method for forming the same are provided. The method includes providing a substrate, forming a dielectric layer overlying the substrate, performing a first shrinking process, wherein the dielectric layer shrinks and has a first shrinkage rate, forming a conductive feature in the dielectric layer after the step of performing the first shrinking process, and performing a second shrinking process after the step of forming the conductive feature, wherein the dielectric layer substantially shrinks and has a second shrinkage rate.

    Abstract translation: 提供了具有改善的可靠性的集成电路的互连结构及其形成方法。 该方法包括提供衬底,形成覆盖在衬底上的电介质层,执行第一收缩过程,其中电介质层收缩并具有第一收缩率,在执行第一收缩过程的步骤之后在介电层中形成导电特征 并且在形成导电特征的步骤之后执行第二收缩过程,其中介电层基本上收缩并且具有第二收缩率。

    MOSFETS COMPRISING SOURCE/DRAIN RECESSES WITH SLANTED SIDEWALL SURFACES, AND METHODS FOR FABRICATING THE SAME
    69.
    发明申请
    MOSFETS COMPRISING SOURCE/DRAIN RECESSES WITH SLANTED SIDEWALL SURFACES, AND METHODS FOR FABRICATING THE SAME 有权
    包含带有凸面表面的源/漏区的MOSFETs及其制造方法

    公开(公告)号:US20080001260A1

    公开(公告)日:2008-01-03

    申请号:US11427491

    申请日:2006-06-29

    Abstract: The present invention relates to improved metal-oxide-semiconductor field effect transistor (MOSFET) devices with stress-inducing structures located at the source and drain (S/D) regions. Specifically, each MOSFET comprises source and drain regions located in a semiconductor substrate. Such source and drain regions comprise recesses with one or more sidewall surfaces that are slanted in relation to an upper surface of the semiconductor substrate. A stress-inducing dielectric layer is located over the slanted sidewall surfaces of the recesses at the source and drain regions. Such MOSFETs can be readily formed by crystallographic etching of the semiconductor substrate to form the recesses with the slanted sidewall surfaces, followed by deposition of a stress-inducing dielectric layer thereover.

    Abstract translation: 本发明涉及具有位于源极和漏极(S / D)区域处的应力诱导结构的改进的金属氧化物半导体场效应晶体管(MOSFET)器件。 具体地,每个MOSFET包括位于半导体衬底中的源区和漏区。 这种源极和漏极区域包括具有相对于半导体衬底的上表面倾斜的一个或多个侧壁表面的凹部。 应力诱导电介质层位于源极和漏极区域的凹部的倾斜侧壁表面上。 这样的MOSFET可以通过半导体衬底的晶体刻蚀容易地形成,以形成具有倾斜侧壁表面的凹部,然后在其上沉积应力诱导介电层。

    Recliner
    70.
    发明申请
    Recliner 审中-公开
    躺椅

    公开(公告)号:US20070290537A1

    公开(公告)日:2007-12-20

    申请号:US11423907

    申请日:2006-06-13

    Applicant: Yu-Hong Lin

    Inventor: Yu-Hong Lin

    Abstract: A recliner includes a backrest, a seat, a leg and a reclining apparatus. The reclining apparatus includes a base, two ears and a rear support. The base is installed on the leg. The ears are pivotally installed on the base on one hand and pivotally connected to the seat on the other hand. The rear support includes a lower section pivotally installed on the base and formed with an ear pivotally connected to the seat and an upper section for supporting the backrest. Thus, the seat is moved backwards and downwards when the backrest is pivoted backwards.

    Abstract translation: 躺椅包括靠背,座椅,腿部和倾斜装置。 倾斜装置包括底座,两个耳朵和后部支撑件。 基座安装在腿上。 耳朵一方面枢转地安装在基座上,另一方面枢转地连接到座椅。 后支撑件包括枢转地安装在基座上并形成有枢转地连接到座椅的耳朵的下部部分和用于支撑靠背的上部部分。 因此,当靠背向后枢转时,座椅向后和向后移动。

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