Abstract:
A reclining apparatus includes a platform and a pivotal element pivotally connected to the platform. A positioning element is movably mounted on the pivotal element and formed with apertures in two rows so that each of the apertures is located on a different level. A locking device includes two latches and an adjusting element. A selective one of the latches can be inserted in one of the apertures in a related one of the rows. The adjusting element is connected to the latches so that the adjusting element is operable to move the latches.
Abstract:
This present invention provides the preparation of a manganese oxide-cerium oxide-supported nano-gold catalyst and a process for subjecting carbon monoxide and oxygen to interaction resulting in the formation of carbon dioxide in a hydrogen-rich environment by a manganese oxide-cerium oxide-supported nano-gold catalyst to remove carbon monoxide in hydrogen stream. The size of the nano-gold particle is less than 5 nm and supported on mixed oxides MnO2/CeO2 in various molar ratios. Preferential oxidation of CO in the presence of CO, O2 and H2 by the manganese oxide-cerium oxide-supported nano-gold catalyst is carried out in a fixed-bed reactor in the process of the present invention. The CO/O2 molar ratio is in the range of 0.5 to 3. The manganese oxide-cerium oxide-supported nano-gold catalyst of the present invention is applied to reduce CO concentration in hydrogen steam to less than 100 ppm to prevent CO from contaminating the electrodes of a fuel cell.
Abstract translation:本发明提供了一种氧化锰 - 氧化铈负载的纳米金催化剂的制备方法和一氧化碳和氧气相互作用的方法,从而在富氧环境中由氧化锰 - 氧化铈形成二氧化碳 支持的纳米金催化剂以除去氢气流中的一氧化碳。 纳米金颗粒的尺寸小于5nm,并以各种摩尔比负载在混合氧化物MnO 2 / CeO 2 2上。 在氧化铈 - 氧化铈负载的纳米金催化剂的CO 2 O 2和H 2 2存在下CO的优先氧化在固定床 反应器在本发明的方法中。 CO / O 2摩尔比在0.5-3范围内。本发明的氧化锰 - 二氧化铈负载的纳米金催化剂用于将氢蒸气中的CO浓度降至更低 超过100ppm以防止CO污染燃料电池的电极。
Abstract:
A method of forming a metal gate in a wafer. PolySi1-xGex and polysilicon are used to form a tapered groove. Gate oxide, PolySi1-xGex, and polysilicon is deposited on a wafer. A resist pattern is formed. A portion of the polysilicon, PolySi1-xGex, and gate oxide is removed to provide a tapered profile. The resist is removed; a dielectric liner is deposited, and then at least a portion of the dielectric liner is removed, thereby exposing the polysilicon and leaving the dielectric liner in contact with the polysilicon, PolySi1-xGex, and gate oxide. A dielectric is deposited, and a portion is removed thereby exposing the polysilicon. The polysilicon, PolySi1-xGex, and gate oxide is removed from inside the dielectric liner, thereby leaving a tapered gate groove. Metal is then deposited in the groove.
Abstract translation:一种在晶片中形成金属栅极的方法。 多晶硅1-x x Ge x S和多晶硅用于形成锥形槽。 栅极氧化物,多晶硅1-x x Ge x,并且多晶硅沉积在晶片上。 形成抗蚀剂图案。 去除多晶硅的一部分,多晶硅1-x N x N x N和栅极氧化物以提供锥形轮廓。 去除抗蚀剂; 沉积电介质衬垫,然后去除电介质衬垫的至少一部分,从而暴露多晶硅并使电介质衬垫与多晶硅接触,多晶硅1-x Ge x 和/或栅极氧化物。 沉积电介质,一部分被去除,从而暴露多晶硅。 从电介质衬垫的内部去除多晶硅,多晶硅1 x x Ge x x和栅极氧化物,从而留下锥形栅极沟槽。 然后将金属沉积在凹槽中。
Abstract:
A method for managing receipts of an e-filing patent application is disclosed. The method includes: receiving one or more receipts from a patent office website via the Internet when a patent application is filed in the patent office electronically; uploading the one or more receipts to a file server; obtaining information corresponding to keywords of the one or more receipts; and updating information of the patent application in a database server connected to the file server according to the information corresponding to the keywords. A related system is also disclosed.
Abstract:
A system for editing contract clauses in static web pages is provided. The system includes a database and a web server. The web server includes: a contract reading module for reading a contract in a static web page on the web server; a clause writing module for writing a selected clause to be edited into the database; a clause editing module for providing an edit textbox to edit the selected clause; and an updating module for updating database and the contract in the static web page after editing. A related method is also provided.
Abstract:
A computer-based method for automatically signing electronic documents is disclosed. The method includes the steps of: creating an electronic document, and notifying a specified signer to digitally sign the electronic document; confirming whether or not to digitally sign the electronic document; obtaining a copy of a digital certificate of the specified signer if it is confirmed to digitally sign the electronic document, the digital certificate comprising a private key; verifying the identity of the specified signer according to the digital certificate; generating a message digest of the electronic document if the identity of the specified signer has been verified; and encrypting the message digest with the private key thereby yielding a digital signature of the electronic document. A related system is also disclosed.
Abstract:
An interconnect structure of an integrated circuit having improved reliability and a method for forming the same are provided. The method includes providing a substrate, forming a dielectric layer overlying the substrate, performing a first shrinking process, wherein the dielectric layer shrinks and has a first shrinkage rate, forming a conductive feature in the dielectric layer after the step of performing the first shrinking process, and performing a second shrinking process after the step of forming the conductive feature, wherein the dielectric layer substantially shrinks and has a second shrinkage rate.
Abstract:
The present invention relates to improved metal-oxide-semiconductor field effect transistor (MOSFET) devices with stress-inducing structures located at the source and drain (S/D) regions. Specifically, each MOSFET comprises source and drain regions located in a semiconductor substrate. Such source and drain regions comprise recesses with one or more sidewall surfaces that are slanted in relation to an upper surface of the semiconductor substrate. A stress-inducing dielectric layer is located over the slanted sidewall surfaces of the recesses at the source and drain regions. Such MOSFETs can be readily formed by crystallographic etching of the semiconductor substrate to form the recesses with the slanted sidewall surfaces, followed by deposition of a stress-inducing dielectric layer thereover.
Abstract:
A recliner includes a backrest, a seat, a leg and a reclining apparatus. The reclining apparatus includes a base, two ears and a rear support. The base is installed on the leg. The ears are pivotally installed on the base on one hand and pivotally connected to the seat on the other hand. The rear support includes a lower section pivotally installed on the base and formed with an ear pivotally connected to the seat and an upper section for supporting the backrest. Thus, the seat is moved backwards and downwards when the backrest is pivoted backwards.