公开(公告)号：US20030121565A1

公开(公告)日：2003-07-03

申请号：US10037269

申请日：2002-01-02

Inventor： Robert S. Beach

IPC: H01F041/00

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/012 ,  G11B5/3909 ,  G11B2005/0008 ,  G11B2005/0016 ,  H01F10/3218 ,  H01F41/304 ,  Y10T29/49034

Abstract: A method of initializing a magnetic sensor having two antiferromagnetic layers is described. The method takes advantage of the spin flop effect such that the two antiferromagnetic layers may be orthogonally initialized. The signal polarity of the sensor is well controlled.

Abstract translation: 描述了一种初始化具有两个反铁磁层的磁传感器的方法。 该方法利用了自旋触发效应，使得两个反铁磁层可以被正交初始化。 传感器的信号极性得到很好的控制。

公开(公告)号：US20020131219A1

公开(公告)日：2002-09-19

申请号：US10152192

申请日：2002-05-20

Inventor： Anthony M. Mack ,  Zheng Gao ,  Nurul Amin ,  Sining Mao ,  Richard Michel

IPC: G11B005/39 ,  C21D001/04

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3113 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034

Abstract: Methods of fabricating spin valve sensors in accordance with the invention include forming a pinning layer from an antiferromagnetic material and forming a synthetic antiferromagnet adjacent the pinning layer. A free ferromagnetic layer is formed, and exchange tabs are formed adjacent outer portions of the free ferromagnetic layer for biasing the free layer. The exchange tabs are formed from the same antiferromagnetic material as the first pinning layer. Then, the magnetic moments of the synthetic antiferromagnet are set, and the magnetic moment of the free ferromagnetic layer is biased, during a single anneal in the presence of a single magnetic field.

Abstract translation: 制造根据本发明的自旋阀传感器的方法包括从反铁磁材料形成钉扎层并在钉扎层附近形成合成的反铁磁体。 形成自由铁磁层，并且在自由铁磁层的外部附近形成交换突片以偏置自由层。 交换翼片由与第一钉扎层相同的反铁磁材料形成。 然后，在存在单个磁场的单次退火期间，设定合成反铁磁体的磁矩，并且自由铁磁层的磁矩被偏置。

公开(公告)号：US06406556B1

公开(公告)日：2002-06-18

申请号：US09272295

申请日：1999-03-19

Applicant: Koji Shimazawa ,  Tetsuro Sasaki ,  Manabu Ohta

Inventor： Koji Shimazawa ,  Tetsuro Sasaki ,  Manabu Ohta

IPC: H01F1008

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F41/304

Abstract: A manufacturing method of a thin-film magnetic head with a MR multi-layered structure using exchange coupling magnetic bias, has a step of forming the MR multi-layered structure, and a step of providing the exchange coupling magnetic bias to the MR multi-layered structure by a temperature-annealing process. The temperature-annealing process includes a step of gradually decreasing the temperature of the multi-layered structure to a first predetermined temperature under application of magnetic field toward a predetermined direction.

Abstract translation: 使用交换耦合磁偏置的具有MR多层结构的薄膜磁头的制造方法具有形成MR多层结构的步骤，以及向MR多层结构提供交换耦合磁偏置的步骤， 层状结构通过温度退火处理。 温度退火处理包括在朝向规定方向施加磁场的状态下将多层结构的温度逐渐降低到第一规定温度的步骤。

公开(公告)号：US06181533B2

公开(公告)日：2001-01-30

申请号：US09253806

申请日：1999-02-19

Applicant: Taras G. Pokhil

Inventor： Taras G. Pokhil

IPC: G11B539

CPC classification number: B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3948 ,  G11B5/3954 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F10/3268 ,  H01F41/304

Abstract: The present invention provides a method for forming a dual giant magnetoresistive sensor. First and second spin valves are first formed and arranged such that a dielectric layer is positioned between the first and the second spin valves. The first spin valve has a plurality of layers including a first antiferromagnetic layer and a first pinned layer. The second spin valve has a plurality of layers including a second antiferromagnetic layer and a second pinned layer. First and second currents are supplied respectively to first and second spin valves. The first current generates a first magnetic field on the first pinned layer that orients a magnetization of the first pinned layer in a first desired direction. The second current generates a second magnetic field on the second pinned layer that orients a magnetization of the second antiferromagnetic layer in a second desired direction. While continuing to supply the first and the second currents, the dual giant magnetoresistive sensor is cooled from a temperature greater than N{acute over (e)}el temperatures of both first and second antiferromagnetic layers to a temperature below the N{acute over (e)}el temperature of both first and second antiferromagnetic layers.

Abstract translation: 本发明提供一种形成双重巨磁阻传感器的方法。 首先形成和布置第一和第二自旋阀，使得电介质层位于第一和第二自旋阀之间。 第一自旋阀具有包括第一反铁磁层和第一固定层的多个层。 第二自旋阀具有包括第二反铁磁层和第二钉扎层的多个层。 第一和第二电流被分别提供给第一和第二自旋阀。 第一电流在第一被钉扎层上产生第一磁场，其将第一被钉扎层的磁化定向在第一所需方向上。 第二电流在第二被钉扎层上产生第二磁场，其在第二期望方向上定向第二反铁磁性层的磁化。 在继续提供第一和第二电流的同时，双重巨磁阻传感器从大于第一和第二反铁磁层的Néel温度的温度冷却到低于第一和第二反铁磁性层的Néel温度的温度。

公开(公告)号：US5989690A

公开(公告)日：1999-11-23

申请号：US45663

申请日：1998-03-20

Applicant: Jun-Ichi Fujikata ,  Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Kunihiko Ishihara ,  Masafumi Nakada

Inventor： Jun-Ichi Fujikata ,  Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Kunihiko Ishihara ,  Masafumi Nakada

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/32 ,  H01F41/30 ,  G11B5/66

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  H01F10/3268 ,  H01F41/304 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/24942 ,  Y10T428/265 ,  Y10T428/31678

Abstract: Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2

Abstract translation: 磁性薄膜2和3在介质之间以非磁性薄膜1层叠在基板4上。 反铁磁性薄膜5与一个磁性薄膜3相邻配置。在反铁磁性薄膜5的偏置磁场Hr与另一磁性薄膜2的矫顽力Hc2之间，满足不等式Hc2

公开(公告)号：US20160177412A1

公开(公告)日：2016-06-23

申请号：US14752271

申请日：2015-06-26

Applicant: Tokyo Electron Limited

Inventor： Toru Ishii ,  Mitsuru Yamazaki

IPC: C21D9/00 ,  H01F41/02 ,  C21D1/26

CPC classification number: C21D9/0006 ,  C21D1/26 ,  C21D9/00 ,  H01F41/304

Abstract: An annealing system and method of operating is described. The annealing system includes a furnace having a vacuum chamber wall that defines a processing space into which a plurality of workpieces may be translated and subjected to thermal and magnetic processing, wherein the furnace further includes a heating element assembly having at least one heating element located radially inward from the vacuum chamber wall and immersed within an outer region of the processing space, and wherein the heating element is composed of a non-metallic, anti-magnetic material. The annealing system further includes a magnet system arranged outside the vacuum chamber wall of the furnace, and configured to generate a magnetic field within the processing space.

Abstract translation: 描述退火系统和操作方法。 退火系统包括具有真空室壁的炉，该真空室壁限定了可以平移多个工件并进行热和磁加工的处理空间，其中炉还包括加热元件组件，该组件具有至少一个位于径向上的加热元件 从真空室壁向内并浸没在处理空间的外部区域内，并且其中加热元件由非金属的抗磁性材料构成。 退火系统还包括布置在炉的真空室壁之外的磁体系统，并被配置为在处理空间内产生磁场。

公开(公告)号：US20160163346A1

公开(公告)日：2016-06-09

申请号：US15042030

申请日：2016-02-11

Applicant: International Business Machines Corporation

Inventor： Icko E.T. Iben

IPC: G11B5/84 ,  G01R33/09 ,  G11B5/39

CPC classification number: G11B5/84 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3106 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3967 ,  G11B5/40 ,  H01F10/3254 ,  H01F41/22 ,  H01F41/302 ,  H01F41/304 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49043

Abstract: A computer program product according to one embodiment includes a computer readable storage medium having program instructions embodied therewith. The program instructions area executable by a data processing system having at least one processor to cause the data processing system to apply, by the data processing system, a current to a lead of a tunneling magnetoresistance (TMR) sensor for inducing joule heating of the lead or a heating layer, the level of joule heating being sufficient to anneal a magnetic layer of the sensor; and maintain, by the data processing system, the current at the level for an amount of time sufficient to anneal the sensor.

Abstract translation: 根据一个实施例的计算机程序产品包括具有其中实施的程序指令的计算机可读存储介质。 由具有至少一个处理器的数据处理系统可执行的程序指令区域，使得数据处理系统由数据处理系统将电流施加到隧道磁阻（TMR）传感器的引线上，以引导引线的焦耳加热 或加热层，焦耳加热的水平足以使传感器的磁性层退火; 并且通过数据处理系统将该电流维持在足以使传感器退火的时间量。

公开(公告)号：US20110121826A1

公开(公告)日：2011-05-26

申请号：US13023260

申请日：2011-02-08

Applicant: Bradley N. ENGEL ,  Phillip G. MATHER ,  Jon M. SLAUGHTER

Inventor： Bradley N. ENGEL ,  Phillip G. MATHER ,  Jon M. SLAUGHTER

IPC: G01R33/02

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/3272 ,  H01F41/304 ,  H01F41/308 ,  H01L27/22

Abstract: A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layers with a properly aligned saturating field (90) and then removing the saturating field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions.

Abstract translation: 制造工艺和装置从两个差异传感器配置（201,211）提供高性能磁场传感器（200），其仅需要由单个参考层（60）形成的两个不同的钉扎轴（206,216），所述单个参考层 被蚀刻成高纵横比形状（62,63），其长轴以不同取向绘制，使得在用适当对齐的饱和场（90）处理参考层，然后去除饱和场时，高纵横比图案提供 使得各图案形状（62,63）的磁化强制沿其各自期望的轴松弛的形状各向异性。 在加热和冷却时，铁磁膜被固定在不同的期望方向上。

公开(公告)号：US07934309B2

公开(公告)日：2011-05-03

申请号：US12003453

申请日：2007-12-26

Applicant: Keita Kawamori ,  Satoshi Miura

Inventor： Keita Kawamori ,  Satoshi Miura

IPC: G11B5/127

CPC classification number: C21D1/04 ,  B82Y25/00 ,  B82Y40/00 ,  C21D9/0068 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043

Abstract: The method of fabricating an exchange-coupling film in accordance with the present invention comprises a multilayer body forming step of forming a multilayer body having an antiferromagnetic layer and a ferromagnetic layer laminated on the antiferromagnetic layer; and an annealing step of annealing the multilayer body in a magnetic field with a maximum temperature higher than a blocking temperature of the multilayer body by 15 to 60° C.

Abstract translation: 根据本发明的制备交换耦合膜的方法包括：多层体形成步骤，其形成层叠在反铁磁层上的反铁磁层和铁磁层的多层体; 以及在多层体的最高温度高于多层体的阻挡温度15〜60℃的磁场中退火多层体的退火工序。

公开(公告)号：US20090260719A1

公开(公告)日：2009-10-22

申请号：US12106190

申请日：2008-04-18

Applicant: Icko E. Tim Iben

Inventor： Icko E. Tim Iben

IPC: H01F1/04 ,  H01F41/22 ,  G11B5/127

CPC classification number: G11B5/84 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3106 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3967 ,  G11B5/40 ,  H01F10/3254 ,  H01F41/302 ,  H01F41/304 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49043

Abstract: A method in one embodiment includes applying a current to a lead of a tunneling magnetoresistance sensor for inducing joule heating of the lead or a heating layer, the level of joule heating being sufficient to anneal a magnetic layer of the sensor; and maintaining the current at the level for an amount of time sufficient to anneal the tunneling magnetoresistive (TMR) sensor. A system in one embodiment comprises a first lead coupled to one end of a tunneling magnetoresistance sensor stack; a second lead coupled to another end of the sensor stack; and a third lead coupled to the first lead, the third lead being selectively coupleable to a ground, wherein a current applied to the first lead at a predetermined level when the third lead is coupled to the ground induces joule heating of the first lead or a heating layer coupled to the first and third leads, the joule heating applied for a predetermined amount of time being sufficient to anneal a magnetic layer of the sensor. Additional systems and methods are also presented.

Abstract translation: 在一个实施例中的方法包括将电流施加到隧道磁阻传感器的引线，用于引起铅或加热层的焦耳加热，焦耳加热的水平足以退火传感器的磁性层; 并将电流保持在该电平上足以使隧道磁阻（TMR）传感器退火的时间。 一个实施例中的系统包括耦合到隧道磁阻传感器堆叠的一端的第一引线; 耦合到传感器堆叠的另一端的第二引线; 以及耦合到所述第一引线的第三引线，所述第三引线选择性地耦合到地，其中当所述第三引线耦合到所述地时，以预定水平施加到所述第一引线的电流引起所述第一引线的焦耳加热或 加热层耦合到第一和第三引线，焦耳加热施加预定的时间量足以使传感器的磁性层退火。 还介绍了其他系统和方法。