公开(公告)号：US20230019876A1

公开(公告)日：2023-01-19

申请号：US17876254

申请日：2022-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeojun Yoon ,  Soojung Lee ,  Yerin Park ,  Doeun Shin ,  Joayoung Lee ,  Yeonee Choi ,  Hoon Han

IPC: G06F3/04886 ,  G06F3/04845 ,  G06F9/451 ,  G06F1/16

Abstract: An electronic device includes first and second touch screen displays and a processor configured to: based on receiving a first touch input on the first touch screen display and a second touch input on the second touch screen display at substantially a same time while displaying a first execution screen in a single window on the first and second touch screen displays, determine whether the first and second touch inputs are a screen split gesture when the first and second touch inputs start within a first boundary area of the first touch screen display and a second boundary area of the second touch screen display, respectively, and are released after moving a distance at substantially the same time; and display the first execution screen in a first split window on the first touch screen display and display a second execution screen in a second split window on the second touch screen display based on the screen split gesture.

公开(公告)号：USD975075S1

公开(公告)日：2023-01-10

申请号：US29762011

申请日：2020-12-14

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

公开(公告)号：US11168253B2

公开(公告)日：2021-11-09

申请号：US16734789

申请日：2020-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changsu Jeon ,  Jungmin Oh ,  Hyosan Lee ,  Hoon Han ,  Jinkyu Roh ,  Hyojoong Yoon ,  Dongwun Shin

IPC: C09K13/00 ,  H01L21/02 ,  H01L21/04 ,  H01L21/302 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

Abstract: A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.

公开(公告)号：US10833251B2

公开(公告)日：2020-11-10

申请号：US16108316

申请日：2018-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Young Kim ,  Jin-Hye Bae ,  Hoon Han ,  Won-Jun Lee ,  Chang-Kyu Lee ,  Geun-Joo Baek ,  Jung-Ig Jeon

IPC: C11D7/50 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A composition for cleaning a magnetic pattern, a method of manufacturing a magnetic memory device, a method of forming a magnetic pattern, and a magnetic memory device, the composition including a glycol ether-based organic solvent; a decomposing agent that includes an aliphatic amine; and at least one of a chelating agent, or a cleaning accelerator that includes an organic alkaline compound, wherein the composition is devoid of water.

公开(公告)号：US10062837B2

公开(公告)日：2018-08-28

申请号：US15259198

申请日：2016-09-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Young Kim ,  Jin-Hye Bae ,  Hoon Han ,  Won-Jun Lee ,  Chang-Kyu Lee ,  Geun-Joo Baek ,  Jung-Ig Jeon

IPC: C11D11/00 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A composition for cleaning a magnetic pattern, a method of manufacturing a magnetic memory device, a method of forming a magnetic pattern, and a magnetic memory device, the composition including a glycol ether-based organic solvent; a decomposing agent that includes an aliphatic amine; and at least one of a chelating agent, or a cleaning accelerator that includes an organic alkaline compound, wherein the composition is devoid of water.

公开(公告)号：US09530670B2

公开(公告)日：2016-12-27

申请号：US14492122

申请日：2014-09-22

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoon Han ,  Byoung-Moon Yoon ,  Young-Taek Hong ,  Keon-Young Kim ,  Jun-Youl Yang ,  Young-Ok Kim ,  Tae-Heon Kim ,  Sun-Joong Song ,  Jung-Hun Lim ,  Jae-Wan Park ,  Jin-Uk Lee

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/3213 ,  H01L29/423 ,  C09K13/04 ,  C23F1/26 ,  H01L21/321 ,  H01L27/115 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/32133 ,  C09K13/04 ,  C23F1/26 ,  H01L21/32115 ,  H01L21/32134 ,  H01L27/11582 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/66666 ,  H01L29/7827

Abstract: The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.

Abstract translation: 本公开内容涉及形成导电图案的方法以及使用其形成半导体器件的方法。 在一些实施例中，形成导电图案的方法包括在衬底上形成第一导电层和第二导电层。 第一导电层和第二导电层可以分别包括金属氮化物和金属。 可以使用包括磷酸，硝酸，辅助氧化剂和剩余的水的蚀刻剂组合物来蚀刻第一导电层和第二导电层。 蚀刻剂组合物可以具有与金属氮化物和金属基本相同的蚀刻速率。