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公开(公告)号:US20240114262A1
公开(公告)日:2024-04-04
申请号:US18201947
申请日:2023-05-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jueun PARK , Sanghyuck MOON , Seyoung KIM , Jaeho LEE
IPC: H04N25/77
CPC classification number: H04N25/77
Abstract: An image sensor includes: a pixel array including a plurality of pixels, wherein each of the pixels includes first and second photodiodes, first and second transfer gates, and a plurality of active regions; and a logic circuit. Each of a plurality of pixel groups in the pixel array includes a first pixel and a second pixel. The active regions in each of the first pixel and the second pixel include a first active region and a second active region. The first active region is adjacent to the first transfer gate. The second active region is adjacent to the second transfer gate. In each of the pixel groups, a plurality of source-follower transistors respectively has a gate connected to the first and second active regions of the first pixel and connected to the first and second active regions of the second pixel. The source-follower transistors are in the first pixel.
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52.
公开(公告)号:US20230420487A1
公开(公告)日:2023-12-28
申请号:US18462909
申请日:2023-09-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeho LEE , Boeun PARK , Younggeun PARK , Jooho LEE
CPC classification number: H01L28/56 , H01L23/66 , H01L28/75 , H01L2223/6661
Abstract: Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.
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公开(公告)号:US20230214637A1
公开(公告)日:2023-07-06
申请号:US18120137
申请日:2023-03-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sungho KIM , Cheheung KIM , Jaeho LEE
CPC classification number: G06N3/063 , G06F7/523 , G06F7/50 , G06F2207/4824
Abstract: A 2D array-based neuromorphic processor includes: axon circuits each being configured to receive a first input corresponding to one bit from among bits indicating n-bit activation; first direction lines extending in a first direction from the axon circuits; second direction lines intersecting the first direction lines; synapse circuits disposed at intersections of the first direction lines and the second direction lines, and each being configured to store a second input corresponding to one bit from among bits indicating an m-bit weight and to output operation values of the first input and the second input; and neuron circuits connected to the first or second direction lines, each of the neuron circuits being configured to receive an operation value output from at least one of the synapse circuits, based on time information assigned individually to the synapse circuits, and to perform an arithmetic operation by using the operation values.
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公开(公告)号:US20220173209A1
公开(公告)日:2022-06-02
申请号:US17465223
申请日:2021-09-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeho LEE , Yong-Hee CHO , Seungwoo JANG , Younggeun PARK , Jooho LEE
IPC: H01L49/02 , H01L29/792
Abstract: A semiconductor device includes a first electrode; a second electrode which is apart from the first electrode; and a dielectric layer between the first electrode and the second electrode. The dielectric layer may include a base material including an oxide of a base metal, the base material having a dielectric constant of about 20 to about 70, and co-dopants including a Group 3 element and a Group 5 element. The Group 3 element may include Sc, Y, B, Al, Ga, In, and/or Tl, and the Group 5 element may include V, Nb, Ta, N, P, As, Sb, and/or Bi.
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公开(公告)号:US20220140066A1
公开(公告)日:2022-05-05
申请号:US17307592
申请日:2021-05-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeho LEE , Boeun PARK , Younggeun PARK , Jooho LEE
IPC: H01L49/02
Abstract: Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.
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56.
公开(公告)号:US20210344855A1
公开(公告)日:2021-11-04
申请号:US17377816
申请日:2021-07-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dong-bum CHOI , Hyunyup KWAK , Jaeho LEE , Ildo KIM , Seongwook SONG
Abstract: An image signal processor that generates a display signal receives an input image signal having a first pedestal level from an image sensor, generates a first signal from the input image signal, the first signal including a second pedestal level, the second pedestal level being different from the first pedestal level and being determined in accordance with the first pedestal level and a processing gain of the image signal processor, generates a second signal having the second pedestal level by amplifying the first signal in accordance with the processing gain, generates a third signal having the second pedestal level by removing a noise signal from the second signal; and generates a fourth signal by subtracting the second pedestal level from the third signal.
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57.
公开(公告)号:US20210328004A1
公开(公告)日:2021-10-21
申请号:US17098915
申请日:2020-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeho LEE , Boeun PARK , Younggeun PARK , Jooho LEE
Abstract: Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.
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58.
公开(公告)号:US20200335335A1
公开(公告)日:2020-10-22
申请号:US16922330
申请日:2020-07-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Haeryong KIM , Hyeonjin SHIN , Jaeho LEE , Sanghyun JO
IPC: H01L21/02 , H01L29/66 , H01L29/786 , H01L29/778
Abstract: A method of growing a two-dimensional transition metal dichalcogenide (TMD) thin film and a method of manufacturing a device including the two-dimensional TMD thin film are provided. The method of growing the two-dimensional TMD thin film may include a precursor supply operation and an evacuation operation, which are periodically and repeatedly performed in a reaction chamber provided with a substrate for thin film growth. The precursor supply operation may include supplying two or more kinds of precursors of a TMD material to the reaction chamber. The evacuation operation may include evacuating the two or more kinds of precursors and by-products generated therefrom from the reaction chamber.
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公开(公告)号:US20200265569A1
公开(公告)日:2020-08-20
申请号:US16651997
申请日:2018-09-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Changgwun LEE , Ildo KIM , Jaeho LEE , Hyeyun JUNG , Kihuk LEE
IPC: G06T5/50 , G06K9/62 , G06F3/0482
Abstract: Various embodiments provide an electronic device and a method, the electronic device comprising a communication module, a memory, and a processor, wherein the processor is configured to: recognize at least one object from among one or more objects by using an image containing the one or more objects; identify a recognition rate and a category corresponding to the at least one object at least on the basis of the recognition; obtain at least one reference image corresponding to the object at least on the basis of the category; when the recognition rate satisfies a first specified condition associated with the recognition rate corresponding to the category, correct the at least one object or an area corresponding to the at least one object by using a reference image, which satisfies the first specified condition, from among the at least one reference image; and when the recognition rate satisfies a second specified condition associated with the recognition rate corresponding to the category, correct the at least one object or the area corresponding to the at least one object by using a reference image selected in accordance with an input from among the at least one reference image. In addition, other embodiments are also possible.
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60.
公开(公告)号:US20200152808A1
公开(公告)日:2020-05-14
申请号:US16740900
申请日:2020-01-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kiyoung LEE , Jinseong HEO , Jaeho LEE , Haeryong KIM , Seongjun PARK , Hyeonjin SHIN , Eunkyu LEE , Sanghyun JO
IPC: H01L31/0216 , H01L31/028 , H01L31/0352 , H01L31/0224 , H01L31/18 , G01N21/59
Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.
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