公开(公告)号：US07085628B2

公开(公告)日：2006-08-01

申请号：US10476973

申请日：2002-11-22

申请人： Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama

发明人： Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama

IPC分类号： G06D23/00

CPC分类号： G05D7/0635 ,  G01D3/022 ,  G01F1/50 ,  G01F15/046 ,  G01L9/025

摘要： A pressure sensor, a pressure control apparatus, and a flow rate control apparatus are provided to automatically correct temperature drift of the pressure sensor and accurately detect pressure despite changes in temperature. An embodiment includes an upstream side pressure sensor between an orifice and a control valve, to control flow rate through the orifice by a regulating control valve, while calculating the flow from the upstream side pressure. With a temperature sensor, a memory means, and a temperature drift correcting means which calculates drift of the upstream side pressure sensor from data in the memory means when the temperature of the fluid changes and offsets the output drift of the upstream side pressure sensor with the calculated amount of the output drift, temperature drift of the pressure sensor is automatically corrected, enabling accurate control of flow rate.

摘要翻译： 提供压力传感器，压力控制装置和流量控制装置来自动校正压力传感器的温度漂移并且尽管温度变化来精确地检测压力。 一个实施例包括在孔口和控制阀之间的上游侧压力传感器，用于通过调节控制阀控制通过孔口的流量，同时计算从上游侧压力的流量。 利用温度传感器，存储装置和温度漂移校正装置，当流体的温度变化时，上游侧压力传感器的输出漂移与 输出漂移的计算量，压力传感器的温度漂移自动校正，可以精确控制流量。

公开(公告)号：US07067403B2

公开(公告)日：2006-06-27

申请号：US10700516

申请日：2003-11-05

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

IPC分类号： H01L21/36

CPC分类号： H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/123 ,  B23K26/127 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757

摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.

公开(公告)号：US07026764B2

公开(公告)日：2006-04-11

申请号：US10390882

申请日：2003-03-19

申请人： Osamu Nakamura

发明人： Osamu Nakamura

IPC分类号： H01J7/24

CPC分类号： B82Y10/00 ,  H01J37/32009 ,  H01J37/3255

摘要： An object of the present invention is to provide an apparatus for producing stable plasma. Another object of the present invention is to provide an apparatus having a long-lasting cathode electrode which is superior in field emission characteristic since the plasma density has to be raised in order to increase the throughput. The structure of the plasma producing apparatus of the present invention relates to a plasma producing apparatus with a plasma chamber surrounded by walls to make material gas into plasma, characterized in the plasma chamber has a cathode electrode, an anode electrode, means for introducing the material gas, and exhaust means, and that a carbon nano tube is formed on a surface of the cathode electrode and the anode electrode is formed on the surface of the cathode electrode.

公开(公告)号：US20050276912A1

公开(公告)日：2005-12-15

申请号：US11151003

申请日：2005-06-13

申请人： Hiroko Yamamoto ,  Osamu Nakamura

发明人： Hiroko Yamamoto ,  Osamu Nakamura

IPC分类号： B05D3/00 ,  B05D5/12 ,  B29C71/02 ,  B32B3/00 ,  H01L21/28 ,  H01L21/288 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L29/45 ,  H05K1/09 ,  H05K3/12

CPC分类号： H01L21/76838 ,  H01L21/28008 ,  H01L21/28026 ,  H01L21/28079 ,  H01L21/28123 ,  H01L21/288 ,  H01L21/76823 ,  H01L21/76825 ,  H01L21/76894 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L2224/4847 ,  H01L2924/07811 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13091 ,  H05K1/095 ,  H05K3/1283 ,  H05K2201/0215 ,  H05K2203/0597 ,  H05K2203/107 ,  H05K2203/1131 ,  Y02P70/605 ,  Y10T428/24917 ,  H01L2924/00

摘要： The present invention provides a method for forming a wiring having a minute shape on a large substrate with a small number of steps, and further a wiring substrate formed by the method. Moreover, the present invention provides a semiconductor device in which cost reduction and throughput improvement are possible due to the small number of steps and reduction of materials and which has a semiconductor element with a minute structure, and further a manufacturing method thereof. According to the present invention, a composition including metal particles and organic resin is irradiated with laser light and a part of the metal particles is baked to form a conductive layer typified by a wiring, an electrode or the like over a substrate. Further, a semiconductor device having the baked conductive layer as a wiring or an electrode is formed.

摘要翻译： 本发明提供了一种在具有少量步骤的大基板上形成具有微小形状的布线的方法，并且还提供了通过该方法形成的布线基板。 此外，本发明提供一种半导体器件，其中由于少量的步骤和材料的减少以及具有微小结构的半导体元件，成本降低和生产率提高是可能的，并且还提供了其制造方法。 根据本发明，用激光照射包含金属颗粒和有机树脂的组合物，并且将一部分金属颗粒烘烤以形成通过基板上的布线，电极等代表的导电层。 此外，形成具有烘烤的导电层作为布线或电极的半导体器件。

公开(公告)号：US20050258421A1

公开(公告)日：2005-11-24

申请号：US10406591

申请日：2003-04-04

申请人： Hiroshi Shibata ,  Osamu Nakamura ,  Shunichi Naka ,  Tohru Ueda

发明人： Hiroshi Shibata ,  Osamu Nakamura ,  Shunichi Naka ,  Tohru Ueda

IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/04 ,  H01L29/66757

摘要： The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor layer, to distribute crystal defects due to the aforementioned element implantation by uniform and suitable density in the semiconductor film, making recombination centers of carriers, to thereby suppress alight sensitivity without spoiling a high degree of carrier movement included in a crystalline semiconductor layer.

摘要翻译： 问题在于提供减少漏光电流的技术，以获得良好的显示。 将选自氩，锗，硅，氦，氖，氪和氙的一种或多种元素注入晶体半导体层中，以通过均匀且适当的密度在半导体膜中分配由于上述元素注入引起的晶体缺陷 ，使载流子的复合中心，从而抑制光敏灵敏度而不破坏包括在晶体半导体层中的高度的载流子移动。

公开(公告)号：US06967803B2

公开(公告)日：2005-11-22

申请号：US10478070

申请日：2003-03-13

申请人： Osamu Nakamura

发明人： Osamu Nakamura

IPC分类号： G11B5/008 ,  G11B15/087 ,  G11B15/18 ,  G11B15/467 ,  G11B20/10 ,  G11B20/12 ,  G11B20/18 ,  G11B27/30 ,  G11B17/00

CPC分类号： G11B5/0086 ,  G11B5/00878 ,  G11B15/087 ,  G11B15/1875 ,  G11B15/4671 ,  G11B20/10 ,  G11B20/18 ,  G11B27/3027 ,  G11B27/3063 ,  G11B2220/90

摘要： When the data recording is performed on a magnetic tape in various recording densities, information relating to the recording density (recording-density related information) is recorded in the data recorded on the magnetic tape. Accordingly, recording and reproduction can be properly managed by referring to the recording-density related information, even if data in various recording densities are recorded on the same magnetic tape.Further, when the recording density is altered, the drive apparatus side switches over the recording density in accordance with the quality of recording data. Thus, in the case where the data writing is not possible due to a recording error, the recording density is switched over to a lower recording density to record the data without an error, and therefore a higher flexibility is provided to a data format to be recorded on the magnetic tape.

摘要翻译： 当以各种记录密度在磁带上进行数据记录时，将与记录密度有关的信息（记录密度相关信息）记录在记录在磁带上的数据中。 因此，即使在同一磁带上记录各种记录密度的数据，也可以通过参考记录密度相关信息适当地管理记录和再现。 此外，当记录密度改变时，驱动装置侧根据记录数据的质量切换记录密度。 因此，在由于记录错误而不能进行数据写入的情况下，将记录密度切换到较低的记录密度以便无误地记录数据，因此对数据格式提供更高的灵活性 记录在磁带上。

公开(公告)号：US06964279B2

公开(公告)日：2005-11-15

申请号：US10469151

申请日：2002-11-22

申请人： Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama ,  Shujiro Inui ,  Taiji Sakai ,  Masanori Ueyama

发明人： Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama ,  Shujiro Inui ,  Taiji Sakai ,  Masanori Ueyama

IPC分类号： G01F1/00 ,  G01F1/36 ,  G01F1/42 ,  G05D7/06

CPC分类号： G05D7/0635 ,  Y10T137/7759 ,  Y10T137/7761

摘要： A pressure-type flow rate control apparatus controls the flow rate of fluid passing through an orifice to a target flow rate. The flow rate of a compressible fluid under non-critical conditions (sub-sonic) passing through the orifice is calculated by: Qc=KP2m(P1−P2)n so that the flow rate can be controlled to the target flow rate with high precision and speed. Also provided is an improved pressure-type flow rate control apparatus in which a pressure ratio P2/P1=r, obtained from an upstream pressure P1 and a downstream pressure P2 is constantly compared with a critical value r, and under critical conditions (r≦rc), the flow rate is calculated by: Qc=KP1. Under non-critical conditions (r>rc), the flow rate is calculated by Qc=KP2m(P1−P2)n.

摘要翻译： 压力式流量控制装置将通过孔口的流体的流量控制为目标流量。 通过孔口的非临界条件（亚音）的可压缩流体的流量通过以下公式计算：<？in-line-formula description =“In-line Formulas”end =“lead”？> Qc = KP （P 1→P 2） -formulae description =“在线公式”end =“tail”？>，可以以高精度和高速度将流量控制在目标流量上。 还提供了一种改进的压力型流量控制装置，其中从上游压力P 1获得的压力比P 2 / P 1 / / SUB>和下游压力P 2 2不断与临界值r进行比较，在临界条件（r≤Rc c）下，流量由下式计算： ：<？in-line-formula description =“In-line Formulas”end =“lead”？> Qc = KP <1> <？in-line-formula description =“In-line Formulas” end =“tail”？>在非关键条件下（r> r> c ），流量通过Qc = KP 2 / （P 1→P 2）。

公开(公告)号：US06961577B2

公开(公告)日：2005-11-01

申请号：US10153899

申请日：2002-05-24

申请人： Rie Nagato ,  Shinji Uebayashi ,  Takayuki Ishiguro ,  Osamu Nakamura

发明人： Rie Nagato ,  Shinji Uebayashi ,  Takayuki Ishiguro ,  Osamu Nakamura

IPC分类号： H04W16/10 ,  H04W16/14 ,  H04W72/04 ,  H04W72/08 ,  H04Q7/20

CPC分类号： H04W16/10 ,  H04B17/318 ,  H04M15/8044 ,  H04M2215/2026 ,  H04M2215/32 ,  H04M2215/42 ,  H04M2215/745 ,  H04W4/24 ,  H04W16/14 ,  H04W52/0238 ,  H04W64/006 ,  H04W72/0453 ,  H04W72/082 ,  Y02D70/164

摘要： A communication channel allocation method allocates a communication channel to communications between a mobile terminal device and a second radio base station using a second frequency band which is close to a first frequency band used by a first radio base station, by detecting a first distance between the second radio base station and the first radio base station, detecting a second distance between the second radio base station and the mobile terminal device when the first distance is less than a first threshold, and allocating a communication channel of a frequency far from the first frequency band in the second frequency band to the communications between the second radio base station and the mobile terminal device when the second distance is less than a second threshold.

公开(公告)号：US20050012887A1

公开(公告)日：2005-01-20

申请号：US10884945

申请日：2004-07-07

申请人： Jun Koyama ,  Keitaro Imai ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura ,  Shunpei Yamazaki

发明人： Jun Koyama ,  Keitaro Imai ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura ,  Shunpei Yamazaki

IPC分类号： G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  G09F9/00 ,  G09F9/30 ,  G09G3/20 ,  G09G3/30 ,  G09G3/36 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L51/50 ,  G02F1/1345

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/13624 ,  G09G3/20 ,  G09G2300/0408 ,  G09G2300/08 ,  G09G2310/0289 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/78669 ,  H01L29/78678

摘要： When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a bootstrap circuit is required, and a voltage over a power supply is applied to a specific element. Therefore, not both the driving amplitude and the reliability can be achieved with a single power supply. According to the invention, a level shifter having a single conductivity is provided to solve such a problem.

摘要翻译： 当使用半非晶TFT来形成信号线驱动电路和像素时，驱动像素需要大的幅度，因此需要大的电源电压。 另一方面，当移位寄存器由具有单一导电性的晶体管构成时，需要自举电路，并且将电源上的电压施加到特定元件。 因此，不能通过单个电源实现驱动振幅和可靠性。 根据本发明，提供具有单一电导率的电平移位器来解决这个问题。

公开(公告)号：US06502757B1

公开(公告)日：2003-01-07

申请号：US09856095

申请日：2001-06-08

申请人： Yoji Iwamoto ,  Osamu Nakamura ,  Daisaku Haoto ,  Kenjiro Kaku

发明人： Yoji Iwamoto ,  Osamu Nakamura ,  Daisaku Haoto ,  Kenjiro Kaku

IPC分类号： G06K1906

CPC分类号： B82Y10/00 ,  B42D25/29 ,  D21H21/42 ,  G03H2240/25 ,  G06K19/10 ,  G06K19/16 ,  G11B5/743

摘要： An information recording medium (10) comprises a base sheet (2a), a resin layer (2) formed on the base sheet (2a) and having a holographic region (6) provided with a diffraction grating (4) in a regular or irregular arrangement, and a ferromagnetic thin film (3) formed on the holographic region (6) of the resin layer (2). The ferromagnetic thin film (3) has a specific magnetic characteristic dependent on a holographic pattern formed in the holographic region (6). The magnetic characteristics of the ferromagnetic thin film are converted into signals corresponding to the holographic pattern.

摘要翻译： 信息记录介质（10）包括基片（2a），形成在基片（2a）上的树脂层（2），并且具有设置有规则或不规则的衍射光栅（4）的全息区域（6） 以及形成在树脂层（2）的全息区域（6）上的铁磁薄膜（3）。 铁磁薄膜（3）具有取决于在全息区域（6）中形成的全息图案的特定磁特性。 铁磁薄膜的磁特性被转换成与全息图相对应的信号。