公开(公告)号：US06961577B2

公开(公告)日：2005-11-01

申请号：US10153899

申请日：2002-05-24

Applicant: Rie Nagato ,  Shinji Uebayashi ,  Takayuki Ishiguro ,  Osamu Nakamura

Inventor： Rie Nagato ,  Shinji Uebayashi ,  Takayuki Ishiguro ,  Osamu Nakamura

IPC: H04W16/10 ,  H04W16/14 ,  H04W72/04 ,  H04W72/08 ,  H04Q7/20

CPC classification number: H04W16/10 ,  H04B17/318 ,  H04M15/8044 ,  H04M2215/2026 ,  H04M2215/32 ,  H04M2215/42 ,  H04M2215/745 ,  H04W4/24 ,  H04W16/14 ,  H04W52/0238 ,  H04W64/006 ,  H04W72/0453 ,  H04W72/082 ,  Y02D70/164

Abstract: A communication channel allocation method allocates a communication channel to communications between a mobile terminal device and a second radio base station using a second frequency band which is close to a first frequency band used by a first radio base station, by detecting a first distance between the second radio base station and the first radio base station, detecting a second distance between the second radio base station and the mobile terminal device when the first distance is less than a first threshold, and allocating a communication channel of a frequency far from the first frequency band in the second frequency band to the communications between the second radio base station and the mobile terminal device when the second distance is less than a second threshold.

公开(公告)号：US20050069737A1

公开(公告)日：2005-03-31

申请号：US10951334

申请日：2004-09-27

Applicant: Masatoshi Nomura ,  Osamu Nakamura ,  Tsutomu Terazaki ,  Keishi Takeyama

Inventor： Masatoshi Nomura ,  Osamu Nakamura ,  Tsutomu Terazaki ,  Keishi Takeyama

IPC: B01J19/00 ,  F28F13/18 ,  H01M8/04 ,  H01M8/06 ,  F28F13/00 ,  H01M8/02

CPC classification number: B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00835 ,  B01J2219/00873 ,  B01J2219/00961 ,  F28F13/18 ,  H01M8/04007 ,  H01M8/0612

Abstract: A thermal treatment apparatus provided on a substrate includes a heat generating section the section includes a heat generating layer, a diffusion preventing layer which contacts one surface of the heat generating layer to prevent heat diffusion due to heat generation of the heat generating layer, and a cohering layer disposed between the substrate and the diffusion preventing layer.

Abstract translation: 设置在基板上的热处理装置包括发热部，该发热部包括发热层，与发热层的一个表面接触的防扩散层，以防止由于发热层的发热引起的热扩散， 配置在基板和扩散防止层之间的助焊层。

公开(公告)号：US20050012887A1

公开(公告)日：2005-01-20

申请号：US10884945

申请日：2004-07-07

Applicant: Jun Koyama ,  Keitaro Imai ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura ,  Shunpei Yamazaki

Inventor： Jun Koyama ,  Keitaro Imai ,  Shinji Maekawa ,  Makoto Furuno ,  Osamu Nakamura ,  Shunpei Yamazaki

IPC: G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  G09F9/00 ,  G09F9/30 ,  G09G3/20 ,  G09G3/30 ,  G09G3/36 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L51/50 ,  G02F1/1345

CPC classification number: H01L27/1288 ,  G02F1/13454 ,  G02F1/13624 ,  G09G3/20 ,  G09G2300/0408 ,  G09G2300/08 ,  G09G2310/0289 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/78669 ,  H01L29/78678

Abstract: When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a bootstrap circuit is required, and a voltage over a power supply is applied to a specific element. Therefore, not both the driving amplitude and the reliability can be achieved with a single power supply. According to the invention, a level shifter having a single conductivity is provided to solve such a problem.

Abstract translation: 当使用半非晶TFT来形成信号线驱动电路和像素时，驱动像素需要大的幅度，因此需要大的电源电压。 另一方面，当移位寄存器由具有单一导电性的晶体管构成时，需要自举电路，并且将电源上的电压施加到特定元件。 因此，不能通过单个电源实现驱动振幅和可靠性。 根据本发明，提供具有单一电导率的电平移位器来解决这个问题。

公开(公告)号：US06502757B1

公开(公告)日：2003-01-07

申请号：US09856095

申请日：2001-06-08

Applicant: Yoji Iwamoto ,  Osamu Nakamura ,  Daisaku Haoto ,  Kenjiro Kaku

Inventor： Yoji Iwamoto ,  Osamu Nakamura ,  Daisaku Haoto ,  Kenjiro Kaku

IPC: G06K1906

CPC classification number: B82Y10/00 ,  B42D25/29 ,  D21H21/42 ,  G03H2240/25 ,  G06K19/10 ,  G06K19/16 ,  G11B5/743

Abstract: An information recording medium (10) comprises a base sheet (2a), a resin layer (2) formed on the base sheet (2a) and having a holographic region (6) provided with a diffraction grating (4) in a regular or irregular arrangement, and a ferromagnetic thin film (3) formed on the holographic region (6) of the resin layer (2). The ferromagnetic thin film (3) has a specific magnetic characteristic dependent on a holographic pattern formed in the holographic region (6). The magnetic characteristics of the ferromagnetic thin film are converted into signals corresponding to the holographic pattern.

Abstract translation: 信息记录介质（10）包括基片（2a），形成在基片（2a）上的树脂层（2），并且具有设置有规则或不规则的衍射光栅（4）的全息区域（6） 以及形成在树脂层（2）的全息区域（6）上的铁磁薄膜（3）。 铁磁薄膜（3）具有取决于在全息区域（6）中形成的全息图案的特定磁特性。 铁磁薄膜的磁特性被转换成与全息图相对应的信号。

公开(公告)号：US06462298B1

公开(公告)日：2002-10-08

申请号：US09045526

申请日：1998-03-20

Applicant: Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

Inventor： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

IPC: B23K3538

CPC classification number: B23K35/0205 ,  B23K9/28 ,  B23K35/222

Abstract: The present invention provides a fixing structure for a welding electrode and a welding head which enable improvement of durability of a welding electrode, improvement of work efficiency in welding, and reduction of time required for welding and also which make it possible to execute welding for a long time with high reliability. In this fixing structure, a fixed section of a welding electrode is inserted via a thermally conductive material into an inserting section of a fixing base and a peripheral surface of the fixed section of the welding electrode is uniformly contacted to the fixing base to fix the welding electrode to the fixing base.

Abstract translation: 本发明提供一种焊接电极和焊接头的固定结构，其能够提高焊接电极的耐久性，提高焊接中的工作效率，并且减少焊接所需的时间，并且还可以执行焊接 长时间具有高可靠性。在该固定结构中，焊接电极的固定部分通过导热材料插入到固定基座的插入部分中，焊接电极的固定部分的周面与 固定基座，将焊接电极固定在固定基座上。

公开(公告)号：US06425042B1

公开(公告)日：2002-07-23

申请号：US09357835

申请日：1999-07-21

Applicant: Katsumi Ikeda ,  Masaki Yoshida ,  Hideto Suzuki ,  Yoshihisa Takayama ,  Tatsuya Kato ,  Osamu Nakamura ,  Hironori Miyoshi

Inventor： Katsumi Ikeda ,  Masaki Yoshida ,  Hideto Suzuki ,  Yoshihisa Takayama ,  Tatsuya Kato ,  Osamu Nakamura ,  Hironori Miyoshi

IPC: G06F1200

CPC classification number: G11B20/1207 ,  G06F3/0605 ,  G06F3/0632 ,  G06F3/0644 ,  G06F3/0682 ,  G11B23/042 ,  G11B27/107 ,  G11B27/11 ,  G11B27/328 ,  G11B2220/655 ,  G11B2220/90

Abstract: When a tape cassette is mounted, a tape drive apparatus judges whether the tape cassette is of a first mode (normal mode) or a second mode (multi-partition mode) based on one or both of management information that is read out from the magnetic tape and management information that is read out from a memory (MIC) incorporated in the tape cassette. The tape drive apparatus then an performs an operation setting in accordance with the mode thus judged.

Abstract translation: 当安装磁带盒时，磁带驱动装置基于从磁读出的管理信息中的一个或两个来判断磁带盒是否处于第一模式（正常模式）或第二模式（多分区模式） 磁带和管理信息，其从并入在磁带盒中的存储器（MIC）中读出。 然后，磁带驱动装置根据如此判断的模式执行操作设置。

公开(公告)号：US06220500B1

公开(公告)日：2001-04-24

申请号：US09130583

申请日：1998-08-07

Applicant: Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

Inventor： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

IPC: B23K120

CPC classification number: B23K35/383 ,  B23K1/20 ,  Y10T428/12535 ,  Y10T428/12979 ,  Y10T428/31678

Abstract: A welding method for materials to be welded which are subjected to fluoride passivation treatment, and a fluoride passivation retreatment method, wherein, when fluoride passivation retreatment is conducted after welding, there is no generation of particles or dust. The method provides superior resistance to fluorine system gases. During fluoride passivation treatment, hydrogen is added to the gas (the back shield gas) flowing through the materials to be welded. In one embodiment of the welding method, the thickness of the fluoride passivated film in a predetermined range from the butt end surfaces of the materials to be welded is set to 10 nm or less, followed by subsequent welding. Furthermore, the fluoride passivation retreatment method, includes the steps of heating at least the welded parts following welding and flowing a gas containing fluorine gas in the interior portion of the parts.

Abstract translation: 对经过氟化物钝化处理的待焊接材料的焊接方法以及氟化物钝化再处理方法，其中，在焊接后进行氟化物钝化再处理时，不产生颗粒或灰尘。 该方法提供了优异的耐氟体系气体阻力。 在氟化物钝化处理期间，将氢气流入待焊接材料的气体（背面保护气体）。 在焊接方法的一个实施例中，氟化钝化膜在待焊接材料的对接端面的预定范围内的厚度设定为10nm以下，随后进行焊接。 此外，氟化物钝化再处理方法包括以下步骤：至少在焊接之后加热焊接部分，并且在部件的内部部分使含有氟气的气体流动。

公开(公告)号：US6129047A

公开(公告)日：2000-10-10

申请号：US122803

申请日：1998-07-27

Applicant: Osamu Nakamura

Inventor： Osamu Nakamura

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14 ,  H01L21/205 ,  H01L21/683 ,  C23C16/00

CPC classification number: C23C16/4583 ,  C23C16/4412 ,  C30B25/12 ,  C30B25/14

Abstract: It was an objective of the present invention to provide a susceptor which can prevent a increasing phenomenon of the dopant concentration of the epitaxial layer at the peripheral portion of the wafer. By providing a through-hole 7 passing through to a rear side at the outer peripheral side of the wafer inside the wafer pocket 6, a down flow of a reacting source gas from the upper surface of the susceptor 5 is formed, so that the unwanted flow of the dopant species being exhausted at the rear surface onto the wafer surface can be avoided. As a result, a raise in the dopant concentration at the outer peripheral portion of the epitaxial layer 9 can be controlled.

Abstract translation: 本发明的目的是提供一种能够防止外延层在晶片周边部分的掺杂剂浓度增加的感受体。 通过在晶片槽6内的晶片的外周侧设置贯通贯通的贯通孔7，形成来自基座5的上表面的反应源气体的向下流动， 可以避免在后表面被排出到晶片表面上的掺杂剂物质的流动。 结果，可以控制在外延层9的外周部分的掺杂剂浓度的升高。

公开(公告)号：US6034469A

公开(公告)日：2000-03-07

申请号：US981187

申请日：1997-12-09

Applicant: Eiichirou Uda ,  Toshiharu Higuchi ,  Osamu Nakamura ,  Kiyomi Koyama ,  Sadao Matsumoto ,  Yoshiaki Ouchi ,  Kazuo Kobayashi ,  Takashi Sudo ,  Katsuhisa Homma

Inventor： Eiichirou Uda ,  Toshiharu Higuchi ,  Osamu Nakamura ,  Kiyomi Koyama ,  Sadao Matsumoto ,  Yoshiaki Ouchi ,  Kazuo Kobayashi ,  Takashi Sudo ,  Katsuhisa Homma

IPC: H01J1/28 ,  H01J9/04 ,  H01J23/04 ,  H01J23/087 ,  H01J1/14

CPC classification number: H01J23/087 ,  H01J1/28 ,  H01J23/04 ,  H01J9/042 ,  H01J2223/04

Abstract: There is provided an impregnated-type cathode substrate comprising a large particle diameter low porosity region and a small particle diameter high porosity region which is provided in a side of an electron emission surface of the large particle diameter low porosity region and has an average particle diameter smaller than an average particle diameter of the large particle diameter low pore region and a porosity higher than a porosity of the large particle diameter low porosity region, the impregnated-type cathode being impregnated with an electron emission substance.

Abstract translation: PCT No.PCT / JP96 / 01527 Sec。 371日期1997年12月9日第 102（e）1997年12月9日PCT PCT 1996年6月6日PCT公布。 公开号WO96 / 42100 PCT 日期：1996年12月27日提供一种浸渍型阴极基板，其包括大粒径低孔隙率区域和小粒径高孔隙率区域，该区域设置在大粒径低孔隙率区域的电子发射表面的一侧， 平均粒径小于大粒径低孔区域的平均粒径，孔隙率高于大粒径低孔隙率区域的孔隙率，浸渍型阴极浸渍有电子发射物质。

公开(公告)号：US5891796A

公开(公告)日：1999-04-06

申请号：US759228

申请日：1996-12-05

Applicant: Osamu Nakamura ,  Kazumasa Sasakura

Inventor： Osamu Nakamura ,  Kazumasa Sasakura

IPC: B23K20/00 ,  H01L21/60 ,  H01L21/44

CPC classification number: H01L24/85 ,  B23K20/007 ,  H01L24/78 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/85045 ,  H01L2224/851 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01082 ,  H01L2924/3025

Abstract: To prevent melting and scattering of a covering-film during ball formation, the covering-film, at the time a ball is formed, has been completely removed from the portion of a covered wire which corresponds to the tail length that protrudes from the tip of a capillary.

Abstract translation: 为了防止球形成期间的覆盖膜的熔融和散射，在形成球时，覆盖膜已经从包覆线的部分完全去除，该覆盖膜对应于从尖端引出的尾部长度 毛细管。