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    REDUCING ALGORITHMIC INACCURACY IN SCATTEROMETRY OVERLAY METROLOGY
    54.
    发明申请
    REDUCING ALGORITHMIC INACCURACY IN SCATTEROMETRY OVERLAY METROLOGY 有权
    降低算术计算中的算术不准确度

    公开(公告)号：US20150233705A1

    公开(公告)日：2015-08-20

    申请号：US14184295

    申请日：2014-02-19

    Applicant: KLA-Tencor Corporation

    Inventor： Barak Bringoltz ,  Mark Ghinovker ,  Daniel Kandel ,  Vladimir Levinski ,  Zeev Bomzon

    IPC: G01B11/14 ,  G01B11/24

    CPC classification number: G01B11/14 ,  G01B11/2441 ,  G03F7/70633

    Abstract: Methods and systems for minimizing of algorithmic inaccuracy in scatterometry overlay (SCOL) metrology are provided. SCOL targets are designed to limit the number of oscillation frequencies in a functional dependency of a resulting SCOL signal on the offset and to reduce the effect of higher mode oscillation frequencies. The targets are segmented in a way that prevents constructive interference of high modes with significant amplitudes, and thus avoids the inaccuracy introduced by such terms into the SCOL signal. Computational methods remove residual errors in a semi-empirical iterative process of compensating for the residual errors algorithmically or through changes in target design.

    Abstract translation: 提供了用于最小化散点映射覆盖（SCOL）计量学中算法不准确性的方法和系统。 SCOL目标被设计为将所得到的SCOL信号的功能依赖性的振荡频率的数量限制在偏移上并且降低更高模式振荡频率的影响。 目标被分段，以防止具有显着幅度的高模式的建构性干扰，从而避免了由这些术语引入到SCOL信号中的不准确性。 计算方法在半经验迭代过程中，通过算法或通过目标设计的变化来补偿残差，从而消除残差。

    Angle-Resolved Antisymmetric Scatterometry
    55.
    发明申请
    Angle-Resolved Antisymmetric Scatterometry 有权
    角度解析反对称散射

    公开(公告)号：US20150177162A1

    公开(公告)日：2015-06-25

    申请号：US14500162

    申请日：2014-09-29

    Applicant: KLA-Tencor Corporation

    Inventor： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

    IPC: G01N21/956 ,  G03F7/20

    CPC classification number: G01N21/95607 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/56 ,  G03F7/70633

    Abstract: A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS1) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (ΔS2) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (ΔS1) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (ΔS2) associated with the second scatterometry cell.

    Abstract translation: 用于确定覆盖偏移的方法可以包括但不限于：获得与第一散射测量单元相关联的第一反对称差分信号（＆Dgr; S1）; 获得与第二散射测量单元相关联的第二反对称差分信号（＆Dgr; S2），并计算与第一散射测量单元和第二反对称差分相关联的第一反对称差分（＆Dgr; S1）信号的叠加偏移 与第二散射测量单元相关联的信号（＆Dgr; S2）。

    Device-like scatterometry overlay targets
    56.
    发明授权
    Device-like scatterometry overlay targets 有权
    类似设备的散点图重叠目标

    公开(公告)号：US08913237B2

    公开(公告)日：2014-12-16

    申请号：US13904318

    申请日：2013-05-29

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Daniel Kandel ,  Eran Amit

    IPC: G01B11/27 ,  H01L23/544 ,  G01N21/47 ,  G03F7/20 ,  G01N21/956

    CPC classification number: G01B11/272 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In one embodiment, a semiconductor target for detecting overlay error between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of a plurality of first grating structures having a course pitch that is resolvable by an inspection tool and a plurality of second grating structures positioned relative to the first grating structures. The second grating structures have a fine pitch that is smaller than the course pitch, and the first and second grating structures are both formed in two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate. The first and second gratings have feature dimensions that all comply with a predefined design rules specification.

    Abstract translation: 在一个实施例中，公开了一种半导体靶，用于检测衬底的两个或更多个连续层之间或在衬底的单层上的两个或更多个分开产生的图案之间的重叠误差。 目标包括至少多个多个第一光栅结构，其具有通过检查工具可分辨的光程间距和相对于第一光栅结构定位的多个第二光栅结构。 第二光栅结构具有小于光栅间距的细间距，并且第一和第二光栅结构均形成在衬底的两个或更多个连续层中，或者在衬底的单个层上的两个或更多个分开产生的图案之间 。 第一和第二光栅具有全部符合预定义的设计规则规范的特征尺寸。

    Method and System for Providing a Target Design Displaying High Sensitivity to Scanner Focus Change
    57.
    发明申请
    Method and System for Providing a Target Design Displaying High Sensitivity to Scanner Focus Change 有权
    提供目标设计的方法和系统，显示出对扫描仪焦点变化的高灵敏度

    公开(公告)号：US20140141536A1

    公开(公告)日：2014-05-22

    申请号：US14074412

    申请日：2013-11-07

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Yoel Feler ,  Daniel Kandel

    IPC: G06F17/50 ,  G03F7/20 ,  H01L21/66 ,  G03F1/38 ,  G01B11/14

    CPC classification number: G03F1/38 ,  G01B11/14 ,  G03F1/70 ,  G03F7/70641 ,  G03F7/70683

    Abstract: A segmented mask includes a set of cell structures, wherein each cell structure includes a set of features having an unresolvable segmentation pitch along a first direction, wherein the unresolvable segmentation pitch along the first direction is smaller than the illumination of the lithography printing tool, wherein the plurality of cell structures have a pitch along a second direction perpendicular to the first direction, wherein the unresolvable segmentation pitch is suitable for generating a printed pattern for shifting the best focus position of the lithography tool by a selected amount to achieve a selected level of focus sensitivity.

    Abstract translation: 分割的掩模包括一组单元结构，其中每个单元结构包括沿着第一方向具有不可解析的分割间距的一组特征，其中沿着第一方向的不可解析的分割间距小于光刻印刷工具的照明，其中 所述多个单元结构具有沿着垂直于所述第一方向的第二方向的间距，其中所述不可分辨的分割间距适于产生用于将所述光刻工具的最佳聚焦位置移动所选量的印刷图案，以实现所选择的等级 聚焦灵敏度。

    PHASE CHARACTERIZATION OF TARGETS
    59.
    发明申请
    PHASE CHARACTERIZATION OF TARGETS 有权
    目标相位特征

    公开(公告)号：US20140111791A1

    公开(公告)日：2014-04-24

    申请号：US14057827

    申请日：2013-10-18

    Applicant: KLA-Tencor Corporation

    Inventor： Amnon Manassen ,  Ohad Bachar ,  Daria Negri ,  Boris Golovanevsky ,  Barak Bringoltz ,  Daniel Kandel ,  Yoel Feler ,  Noam Sapiens ,  Paykin Irina ,  Alexander Svizher ,  Meir Aloni ,  Guy Ben Dov ,  Hadar Shalmoni ,  Vladimir Levinski

    IPC: G01B9/02

    CPC classification number: G01B9/0209 ,  G01B9/02027 ,  G01B9/02043 ,  G01B9/02087 ,  G01N21/45

    Abstract: Systems and methods are provided which derive target characteristics from interferometry images taken at multiple phase differences between target beams and reference beams yielding the interferometry images. The illumination of the target and the reference has a coherence length of less than 30 microns to enable scanning the phase through the coherence length of the illumination. The interferometry images are taken at the pupil plane and/or in the field plane to combine angular and spectroscopic scatterometry data that characterize and correct target topography and enhance the performance of metrology systems.

    Abstract translation: 提供了系统和方法，其从在目标光束和参考光束之间的多个相位差处拍摄的产生干涉测量图像的干涉测量图像中导出目标特征。 目标和参考物的照明具有小于30微米的相干长度，以使得能够通过照明的相干长度扫描相位。 在瞳孔平面和/或场平面中拍摄干涉测量图像，以组合表征和校正目标地形的角度和光谱散射数据，并增强计量系统的性能。

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