公开(公告)号：US20230026937A1

公开(公告)日：2023-01-26

申请号：US17959306

申请日：2022-10-04

Applicant: Japan Display Inc.,

Inventor： Isao SUZUMURA ,  Fumiya KIMURA ,  Kazuhide MOCHIZUKI ,  Hitoshi TANAKA ,  Kenichi AKUTSU ,  Atsuko SHIMADA

IPC: G02F1/1362 ,  G02F1/1368

Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer and a plurality of transparent conductive layers. The transparent conductive layers include a pixel electrode, a first conductive layer and a second conductive layer. The pixel electrode is in contact with the second conductive layer. The second conductive layer is in contact with the first conductive layer. The first conductive layer is brought into contact with a second region of the semiconductor layer through a first contact hole.

公开(公告)号：US20220373846A1

公开(公告)日：2022-11-24

申请号：US17749217

申请日：2022-05-20

Applicant: Japan Display Inc.

Inventor： Fumiya KIMURA ,  Isao SUZUMURA ,  Junko NAGASAWA ,  Atsuko IMOTO

IPC: G02F1/1362 ,  G02F1/1368

Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer, a third insulating layer, a color filter, and transparent conductive layers including a pixel electrode, a first conductive layer, and a second conductive layer. The first conductive layer is located between the second insulating layer and the third insulating layer, and is in contact with a second area of the semiconductor layer. The second conductive layer is located on the color filter and is in contact with the first conductive layer. The pixel electrode is located on the second conductive layer and is in contact with the second conductive layer.

公开(公告)号：US20220208795A1

公开(公告)日：2022-06-30

申请号：US17694754

申请日：2022-03-15

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA

IPC: H01L27/12 ,  G02F1/1368 ,  H01L27/32 ,  H01L29/40 ,  H01L29/423

Abstract: The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.

公开(公告)号：US20210405411A1

公开(公告)日：2021-12-30

申请号：US17471881

申请日：2021-09-10

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/32 ,  H01L51/52 ,  H01L29/786

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US20200335530A1

公开(公告)日：2020-10-22

申请号：US16922438

申请日：2020-07-07

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/40 ,  G02F1/1368 ,  H01L27/32

Abstract: The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.

公开(公告)号：US20190129227A1

公开(公告)日：2019-05-02

申请号：US16153861

申请日：2018-10-08

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Isao SUZUMURA ,  Hajime WATAKABE

IPC: G02F1/1333 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1362 ,  H01L27/12 ,  G09F9/30 ,  H05K1/18

Abstract: The purpose of the invention is to realize the flexible display device of high reliability; specifically in a structure that a bending area is in a terminal area, and in that disconnection of the wiring does not occur in the bending area. The concrete structure is that: a display device having a display area, a driving circuit area and a bending area comprising: a first thin film transistor and a first interlayer insulating film are formed in the display area, a second thin film transistor and a second interlayer insulating film are formed in the driving circuit area, terminal wirings to connects the display area and the driving circuit area are formed in the bending area.

公开(公告)号：US20180122835A1

公开(公告)日：2018-05-03

申请号：US15723300

申请日：2017-10-03

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Isao SUZUMURA ,  Hirokazu WATANABE ,  Akihiro HANADA

IPC: H01L27/12 ,  H01L21/311 ,  H01L21/473 ,  H01L21/4757

CPC classification number: G02F1/1368 ,  G02F2001/13685 ,  H01L21/473 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L23/532 ,  H01L27/12 ,  H01L29/786 ,  H01L51/50

Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.

公开(公告)号：US20170343845A1

公开(公告)日：2017-11-30

申请号：US15662385

申请日：2017-07-28

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Arichika ISHIDA ,  Hidekazu MIYAKE ,  Hiroto MIYAKE ,  Isao SUZUMURA

IPC: G02F1/1368 ,  G02F1/1343 ,  G02F1/1362 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423

CPC classification number: G02F1/1368 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136218 ,  G02F2001/13685 ,  G02F2202/10 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

Abstract: According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

公开(公告)号：US20170338433A1

公开(公告)日：2017-11-23

申请号：US15477195

申请日：2017-04-03

Applicant: Japan Display Inc.

Inventor： Yoshinori ISHII ,  Kazufumi WATABE ,  Isao SUZUMURA

IPC: H01L51/50 ,  H01L51/52 ,  H01L51/10 ,  H01L51/00 ,  G02F1/136 ,  G02F1/153 ,  G02F1/1362 ,  G02F1/1333 ,  H01L51/05

CPC classification number: H01L51/5012 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/136 ,  G02F1/136277 ,  G02F1/1533 ,  G02F2001/136295 ,  G02F2001/1536 ,  H01L27/3262 ,  H01L29/4908 ,  H01L51/0097 ,  H01L51/0508 ,  H01L51/107 ,  H01L51/5237 ,  H01L51/5253

Abstract: An organic EL display device has a TFT formed on the substrate, and an organic EL layer formed on the TFT. A protective layer is formed on the organic EL layer, and a first bather layer which contains AlOx is formed between the substrate and the TFT.

公开(公告)号：US20170338249A1

公开(公告)日：2017-11-23

申请号：US15585401

申请日：2017-05-03

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Kazufumi WATABE ,  Yoshinori ISHII ,  Hidekazu MIYAKE ,  Yohei YAMAGUCHI

IPC: H01L27/12 ,  H01L29/51 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/133 ,  H01L29/786 ,  H01L29/24 ,  H01L27/32

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/10 ,  G02F2202/104 ,  H01L27/1251 ,  H01L27/1259 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869

Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.