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56 条记录 (耗时 0.019 秒)

    Stress-Controlled HEMT
    51.
    发明申请
    Stress-Controlled HEMT 有权
    应力控制HEMT

    公开(公告)号：US20140008658A1

    公开(公告)日：2014-01-09

    申请号：US13540711

    申请日：2012-07-03

    申请人： Ralf Siemieniec ,  Gilberto Curatola

    发明人： Ralf Siemieniec ,  Gilberto Curatola

    IPC分类号： H01L29/778 ,  H01L21/20 ,  H01L29/20

    CPC分类号： H01L29/42372 ,  H01L21/28247 ,  H01L21/28581 ,  H01L29/1054 ,  H01L29/1075 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/84

    摘要： A transistor device includes a heterostructure body having a source, a drain spaced apart from the source and a two-dimensional charge carrier gas channel between the source and the drain. The transistor device further includes a piezoelectric gate on the heterostructure body. The piezoelectric gate is operable to control the channel below the piezoelectric gate by increasing or decreasing a force applied to the heterostructure body responsive to a voltage applied to the piezoelectric gate.

    摘要翻译： 晶体管器件包括具有源极，与源极间隔开的漏极和源极与漏极之间的二维电荷载流子通道的异质结构体。 晶体管器件还包括异质结构体上的压电栅极。 压电栅极可操作以通过响应于施加到压电栅极的电压增加或减小施加到异质结构体的力来控制压电栅极下方的沟道。

    TRANSISTOR ARRANGEMENT WITH A MOSFET
    53.
    发明申请
    TRANSISTOR ARRANGEMENT WITH A MOSFET 有权
    MOSFET的晶体管布置

    公开(公告)号：US20120267704A1

    公开(公告)日：2012-10-25

    申请号：US13092546

    申请日：2011-04-22

    申请人： Ralf Siemieniec ,  Hans-Joachim Schulze

    发明人： Ralf Siemieniec ,  Hans-Joachim Schulze

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7803 ,  H01L29/8083

    摘要： A semiconductor arrangement includes a MOSFET having a source region, a drift region and a drain region of a first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region, a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a source electrode contacting the source region and the body region. The semiconductor arrangement further includes a normally-off JFET having a channel region of the first conductivity type that is coupled between the source electrode and the drift region and extends adjacent the body region so that a p-n junction is formed between the body region and the channel region.

    摘要翻译： 半导体装置包括具有第一导电类型的源极区域，漂移区域和漏极区域的MOSFET，设置在源极区域和漂移区域之间的第二导电类型的体区域，邻近体区域布置的栅极电极 并通过栅极电介质与体区电介质绝缘，以及与源区和身体区接触的源电极。 该半导体装置还包括常闭JFET，其具有第一导电类型的沟道区，该沟道区耦合在源电极和漂移区之间并且在身体区附近延伸，使得在体区和通道之间形成pn结 地区。

    INTEGRATED CIRCUIT DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR THE PRODUCTION OF AN INTEGRATED CIRCUIT DEVICE
    55.
    发明申请
    INTEGRATED CIRCUIT DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR THE PRODUCTION OF AN INTEGRATED CIRCUIT DEVICE 有权
    具有半导体体的集成电路装置及其集成电路装置的制造方法

    公开(公告)号：US20110076817A1

    公开(公告)日：2011-03-31

    申请号：US12961996

    申请日：2010-12-07

    申请人： Uli Hiller ,  Oliver Blank ,  Ralf Siemieniec ,  Maximilian Roesch

    发明人： Uli Hiller ,  Oliver Blank ,  Ralf Siemieniec ,  Maximilian Roesch

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7813 ,  H01L21/2815 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66734 ,  H01L29/7811

    摘要： An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.

    摘要翻译： 提供了具有半导体本体的集成电路器件和用于制造半导体器件的方法。 半导体体包括具有第一导电类型的漂移区的电池区。 此外，半导体器件包括围绕电池区的边缘区域。 具有沟槽栅极结构的场板被布置在电池区中，并且在边缘区域中设置围绕电池区的边缘沟槽。 半导体本体的前侧处于边缘区域，该边缘区域具有与单元区域的体区的掺杂材料互补的第一导电类型的导电类型的边缘区域。 互补导电类型的边缘区域在边缘沟槽内部和外部均延伸。

    Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device
    56.
    发明授权
    Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device 有权
    具有半导体主体的集成电路装置和用于生产集成电路装置的方法

    公开(公告)号：US07880226B2

    公开(公告)日：2011-02-01

    申请号：US12020077

    申请日：2008-01-25

    申请人： Uli Hiller ,  Oliver Blank ,  Ralf Siemieniec ,  Maximilian Roesch

    发明人： Uli Hiller ,  Oliver Blank ,  Ralf Siemieniec ,  Maximilian Roesch

    IPC分类号： H01L29/72

    CPC分类号： H01L29/7813 ,  H01L21/2815 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66734 ,  H01L29/7811

    摘要： An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.

    摘要翻译： 提供了具有半导体本体的集成电路器件和用于制造半导体器件的方法。 半导体体包括具有第一导电类型的漂移区的电池区。 此外，半导体器件包括围绕电池区的边缘区域。 具有沟槽栅极结构的场板被布置在电池区中，并且在边缘区域中设置围绕电池区的边缘沟槽。 半导体本体的前侧处于边缘区域，该边缘区域具有与单元区域的体区的掺杂材料互补的第一导电类型的导电类型的边缘区域。 互补导电类型的边缘区域在边缘沟槽内部和外部均延伸。