公开(公告)号：US20240079212A1

公开(公告)日：2024-03-07

申请号：US17930139

申请日：2022-09-07

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Nicolas J. BRIGHT ,  Yang YANG ,  A N M Wasekul AZAD

IPC: H01J37/32 ,  G01R27/02 ,  H01L21/66

CPC classification number: H01J37/32183 ,  G01R27/02 ,  H01L22/20 ,  H01J2237/3341

Abstract: Embodiments of the disclosure include a method of processing a substrate in a plasma processing system, comprising delivering an RF signal, by an RF generator, through an RF match to an electrode assembly disposed within the plasma processing system, wherein while delivering the RF signal the RF match is set to a first matching point, and delivering a voltage waveform, by a waveform generator, to the electrode assembly disposed within the plasma processing system while the RF signal is delivered to the electrode assembly. The method includes receiving, by the RF match, a synchronization signal from a RF generator or the waveform generator, measuring, by an output sensor of the RF match, a first set of impedance related data of the plasma processing system over a first time period, the first time period beginning after a first delay triggered by a first portion of a first waveform pulse of the synchronization signal, measuring, by the output sensor of the RF match, a second set of impedance related data of the plasma processing system over a second time period, the second time period beginning after a second delay triggered by the first portion of the first waveform pulse of the synchronization signal, calculating, by the RF match, a combined impedance parameter based on the measured first set of impedance related data and the measured second set of impedance related data, and adjusting a matching parameter within the RF match based on the calculated combined impedance parameter to achieve a second matching point.

公开(公告)号：US20230170192A1

公开(公告)日：2023-06-01

申请号：US17537314

申请日：2021-11-29

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/683 ,  G01R29/12

CPC classification number: H01J37/32935 ,  H01J37/32715 ,  H01J37/244 ,  H01J37/32697 ,  H01L21/6831 ,  G01R29/12

Abstract: Embodiments of the present disclosure generally include an apparatus and methods for measuring and controlling in real-time a potential formed on a substrate in a plasma processing chamber during plasma processing. Embodiments of the disclosure include a plasma processing system that includes a substrate support disposed within a processing volume of the plasma processing system, the substrate support comprising a substrate supporting surface and a dielectric layer disposed between a first electrode and the substrate supporting surface. The plasma processing system further includes a first generator coupled to a second electrode of the plasma processing system, and a sensor disposed a first distance from the substrate supporting surface. The first generator is configured to generate a plasma within the processing volume. The first electrode is disposed a second distance from the substrate supporting surface, and the first distance is less than the second distance. The sensor is generally configured to detect an electric field strength and/or a voltage formed on the substrate during plasma processing.

公开(公告)号：US20230162996A1

公开(公告)日：2023-05-25

申请号：US18100063

申请日：2023-01-23

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/67 ,  H01L21/311 ,  C23C16/02 ,  C23C16/517 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01L21/31116 ,  C23C16/0245 ,  C23C16/517 ,  H01J37/32091 ,  H01J37/32568 ,  H01J2237/3151 ,  H01J2237/3137

Abstract: Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.

公开(公告)号：US20230021761A1

公开(公告)日：2023-01-26

申请号：US17961224

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/26 ,  H01L21/033

Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

公开(公告)号：US20220359118A1

公开(公告)日：2022-11-10

申请号：US17314570

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Steven Derek LANE ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01F41/04 ,  H01F27/29

Abstract: Methods for forming a high current inductor leverage solid core materials to form ribbon inductors. In some embodiments, the method may include forming a central opening lengthwise through a solid core conductive material, wherein the solid core conductive material has an outer diameter, the central opening forms an inner diameter of the solid core conductive material, and a difference between the outer diameter and the inner diameter is a thickness of a ribbon conductor of the high current inductor and removing a spiral portion of the solid core conductive material to form the ribbon conductor of the high current inductor, wherein a width of the spiral portion forms a gap spacing between windings of the ribbon conductor.

公开(公告)号：US20190393053A1

公开(公告)日：2019-12-26

申请号：US16441579

申请日：2019-06-14

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/67 ,  H01L21/311 ,  C23C16/517 ,  C23C16/02

Abstract: Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.

公开(公告)号：US20190228970A1

公开(公告)日：2019-07-25

申请号：US16371802

申请日：2019-04-01

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Lucy CHEN ,  Jie ZHOU ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Srinivas D. NEMANI ,  Chentsau YING ,  Jingjing LIU ,  Steven LANE ,  Gonzalo MONROY ,  James D. CARDUCCI

IPC: H01L21/033 ,  C23C16/26 ,  H01L21/308 ,  H01J37/32 ,  H01L21/02 ,  C23C16/505 ,  C23C16/56 ,  C01B32/25 ,  H01L21/3213 ,  C23C16/509

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

公开(公告)号：US20170372899A1

公开(公告)日：2017-12-28

申请号：US15195640

申请日：2016-06-28

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Lucy CHEN ,  Jie ZHOU ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Srinivas D. NEMANI ,  Chentsau YING ,  Jingjing LIU ,  Steven LANE ,  Gonzalo MONROY ,  James D. CARDUCCI

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  C23C16/26 ,  H01L21/308 ,  H01L21/02 ,  H01L21/3213 ,  C23C16/56 ,  H01L21/762

CPC classification number: H01L21/0332 ,  C01B32/25 ,  C23C16/26 ,  C23C16/505 ,  C23C16/509 ,  C23C16/56 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3255 ,  H01J37/32623 ,  H01J37/3266 ,  H01J2237/327 ,  H01J2237/3321 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/76224

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.