公开(公告)号：US08624281B2

公开(公告)日：2014-01-07

申请号：US12974621

申请日：2010-12-21

Applicant: Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/00

CPC classification number: H01L33/60 ,  F21K9/64 ,  H01L33/32 ,  H01L33/46 ,  H01L33/483 ,  H01L33/50 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

Abstract translation: 一种用于增加白光发光二极管（WLED）的发光效率的方法，包括在LED管芯和荧光体之间以及在所述荧光体和外部介质之间引入光学功能界面，其中所述荧光体和 LED管芯提供对由荧光体远离外部介质发出的光的反射率以及由LED管芯发射的光的透射率。 因此，WLED可以包括围绕LED管芯，荧光体层以及放置在荧光体层和第一材料之间的用于直接LED发射和反射用于荧光体发射的透明的至少一个附加层或材料的第一材料 其围绕LED管芯。

公开(公告)号：US08536618B2

公开(公告)日：2013-09-17

申请号：US12938872

申请日：2010-11-03

Applicant: Jacob J. Richardson ,  Daniel B. Thompson ,  Ingrid Koslow ,  Jun Seok Ha ,  Steven P. DenBaars ,  Shuji Nakamura ,  Maryann E. Lange

Inventor： Jacob J. Richardson ,  Daniel B. Thompson ,  Ingrid Koslow ,  Jun Seok Ha ,  Frederick F. Lange ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/36

CPC classification number: H01L33/44 ,  H01L21/288 ,  H01L33/007 ,  H01L33/14 ,  H01L33/28 ,  H01L33/32 ,  H01L33/40

Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.

Abstract translation: 一种制备具有改进的光提取效率的发光二极管的方法，包括通过从水溶液中生长ZnO纳米棒，在III-氮化物基LED的一个或多个表面上沉积多个氧化锌（ZnO）纳米棒，其中 表面与III型氮化物的c面不同，透过LED产生的光。

公开(公告)号：US08524012B2

公开(公告)日：2013-09-03

申请号：US13357432

申请日：2012-01-24

Applicant: Troy J. Baker ,  Benjamin A. Haskell ,  Paul T. Fini ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamua

Inventor： Troy J. Baker ,  Benjamin A. Haskell ,  Paul T. Fini ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamua

IPC: H01L21/205

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  Y10S438/938

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.

Abstract translation: 一种在杂交尖晶石衬底上生长平面，半极性氮化物膜的方法，其中大面积的平面半极性氮化物膜平行于衬底的表面。 平面膜和衬底是：（1）在{100}尖晶石衬底上在特定方向上生长的{1011}氮化镓（GaN），（2）在{110}尖晶石衬底上生长的{1013}氮化镓（GaN） ，（3）在{1100}蓝宝石衬底上生长的{1122}氮化镓（GaN），以及（4）在{1100}蓝宝石衬底上生长的{1013}氮化镓（GaN）。

公开(公告)号：US08481991B2

公开(公告)日：2013-07-09

申请号：US12861652

申请日：2010-08-23

Applicant: Hiroaki Ohta ,  Feng Wu ,  Anurag Tyagi ,  Arpan Chakraborty ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Erin C. Young

Inventor： Hiroaki Ohta ,  Feng Wu ,  Anurag Tyagi ,  Arpan Chakraborty ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Erin C. Young

IPC: H01L29/66

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2201 ,  H01S5/32 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3425 ,  H01S2301/173

Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

Abstract translation: 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。

公开(公告)号：US20130168833A1

公开(公告)日：2013-07-04

申请号：US13776446

申请日：2013-02-25

Applicant: Hitoshi Sato ,  John F. Kaeding ,  Michael Iza ,  Benjamin A. Haskell ,  Troy J. Baker ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： Hitoshi Sato ,  John F. Kaeding ,  Michael Iza ,  Benjamin A. Haskell ,  Troy J. Baker ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/04 ,  H01L21/02

CPC classification number: H01L29/045 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02365 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

Abstract: A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Abstract translation: 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。

公开(公告)号：US20120205625A1

公开(公告)日：2012-08-16

申请号：US13454321

申请日：2012-04-24

Applicant: Michael Iza ,  Hitoshi Sato ,  Eu Jin Hwang ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： Michael Iza ,  Hitoshi Sato ,  Eu Jin Hwang ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/205 ,  H01L21/20

CPC classification number: H01L33/04 ,  H01L33/12 ,  H01L33/32

Abstract: A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0

Abstract translation: 在图案化衬底上的氮化物发光二极管，包括具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

公开(公告)号：US08227819B2

公开(公告)日：2012-07-24

申请号：US13250558

申请日：2011-09-30

Applicant: Hong Zhong ,  Anurag Tyagi ,  James Stephen Speck ,  Steven P. Denbaars ,  Shuji Nakamura

Inventor： Hong Zhong ,  Anurag Tyagi ,  James Stephen Speck ,  Steven P. Denbaars ,  Shuji Nakamura

IPC: H01L33/00

CPC classification number: H01L33/18 ,  H01L33/02

Abstract: A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.

Abstract translation: 具有厚度为100nm以下的p型层的发光二极管（LED），位于p型层和n型层之间的n型层和有源层，用于发光 ，其中LED不包括单独的电子阻挡层。

公开(公告)号：US20120175739A1

公开(公告)日：2012-07-12

申请号：US13427590

申请日：2012-03-22

Applicant: Asako HIRAI ,  Zhongyuan JIA ,  Makoto SAITO ,  Hisashi YAMADA ,  Kenji ISO ,  Steven P. DENBAARS ,  Shuji NAKAMURA ,  James S. SPECK

Inventor： Asako HIRAI ,  Zhongyuan JIA ,  Makoto SAITO ,  Hisashi YAMADA ,  Kenji ISO ,  Steven P. DENBAARS ,  Shuji NAKAMURA ,  James S. SPECK

IPC: H01L29/20 ,  H01L21/20

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an α-axis direction comprising a 0.15° or greater miscut angle towards the α-axis direction and a less than 30° miscut angle towards the α-axis direction.

Abstract translation: 提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。 膜的表面形态通过朝向朝向α轴方向具有0.15°以上的误差角和朝向α轴方向的小于30°的倾斜角度的朝向α轴方向的误差角度而改善。

公开(公告)号：US20120138986A1

公开(公告)日：2012-06-07

申请号：US13284001

申请日：2011-10-28

Applicant: ROY B. CHUNG ,  HUNG TSE CHEN ,  CHIH-CHIEN PAN ,  JAMES S. SPECK ,  STEVEN P. DENBAARS ,  SHUJI NAKAMURA

Inventor： ROY B. CHUNG ,  HUNG TSE CHEN ,  CHIH-CHIEN PAN ,  JAMES S. SPECK ,  STEVEN P. DENBAARS ,  SHUJI NAKAMURA

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L29/452 ,  H01L33/32 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

Abstract: A method of fabricating an (Al, In, Ga)N based optoelectronic device, comprising forming an n-type ohmic contact on an (Al, In, Ga)N surface of the device, wherein the surface comprises an Nitrogen face (N-face) and a N-rich face of the (Al, In, Ga)N, the n-type contact is on the N-face and the N-rich face, and the current spreading of the n-type ohmic contact is enhanced by a combination of a lower and a higher contact resistance on the surface.

Abstract translation: 一种制造（Al，In，Ga）N基光电子器件的方法，包括在器件的（Al，In，Ga）N表面上形成n型欧姆接触，其中所述表面包括氮面（N- 面）和（Al，In，Ga）N的富N面，n面接触在N面和富N面上，并且n型欧姆接触的电流扩展增强 通过表面上的较低和较高的接触电阻的组合。

公开(公告)号：US20120138891A1

公开(公告)日：2012-06-07

申请号：US13282794

申请日：2011-10-27

Applicant: Roy B. Chung ,  Changseok Han ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Roy B. Chung ,  Changseok Han ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/04

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: A method for reduction of efficiency droop using an (Al, In, Ga)N/AlxIn1-xN superlattice electron blocking layer (SL-EBL) in nitride based light emitting diodes.

Abstract translation: 在氮化物基发光二极管中使用（Al，In，Ga）N / Al x In 1-x N超晶格电子阻挡层（SL-EBL）降低效率下降的方法。