Invention Grant
- Patent Title: Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes
- Patent Title (中): 薄型p型氮化镓和氮化镓氮化镓电子阻挡层无氮化镓基发光二极管
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Application No.: US13250558Application Date: 2011-09-30
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Publication No.: US08227819B2Publication Date: 2012-07-24
- Inventor: Hong Zhong , Anurag Tyagi , James Stephen Speck , Steven P. Denbaars , Shuji Nakamura
- Applicant: Hong Zhong , Anurag Tyagi , James Stephen Speck , Steven P. Denbaars , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.
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