公开(公告)号：US20120164845A1

公开(公告)日：2012-06-28

申请号：US13415753

申请日：2012-03-08

申请人： Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

发明人： Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

IPC分类号： H01L21/318 ,  H01L21/263

CPC分类号： H01J37/3244 ,  H01J37/32449

摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.

摘要翻译： 本发明总体上提供了用于处理衬底的装置和方法。 特别地，本发明提供了获得处理气体的期望分布的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中， 第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口 ，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

公开(公告)号：US20100258052A1

公开(公告)日：2010-10-14

申请号：US12637028

申请日：2009-12-14

申请人： TETSUYA ISHIKAWA ,  DAVID H. QUACH ,  ANZHONG CHANG ,  OLGA KRYLIOUK ,  YURIY MELNIK ,  HARSUKHDEEP S. RATIA ,  SON T. NGUYEN ,  LILY PANG

发明人： TETSUYA ISHIKAWA ,  DAVID H. QUACH ,  ANZHONG CHANG ,  OLGA KRYLIOUK ,  YURIY MELNIK ,  HARSUKHDEEP S. RATIA ,  SON T. NGUYEN ,  LILY PANG

IPC分类号： C23C16/00

CPC分类号： C30B29/403 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/46 ,  C30B25/02 ,  C30B29/406 ,  Y10T137/479 ,  Y10T137/4807 ,  Y10T137/4824 ,  Y10T137/7504 ,  Y10T137/8376

摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

摘要翻译： 本文公开的实施例通常涉及HVPE室。 腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。 不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

公开(公告)号：US20100080904A1

公开(公告)日：2010-04-01

申请号：US12240120

申请日：2008-09-29

申请人： Nir Merry ,  Son T. Nguyen

发明人： Nir Merry ,  Son T. Nguyen

IPC分类号： C23C16/455

CPC分类号： C23C16/45544 ,  C23C16/45502 ,  C23C16/45563

摘要： Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure.

摘要翻译： 本文公开了处理衬底的方法和设备。 处理室包括室主体，基板支撑基座，泵口和气体注入漏斗。 腔体具有内部体积，并且衬底支撑基座设置在腔体的内部体积中。 泵口连接到内部体积并且设置在离基板支撑基座的中心轴线偏心的位置。 泵端口提供靠近基板支撑基座的表面的方位不均匀的泵送，并且在使用期间在内部体积内产生高压和低压的局部区域。 气体注入漏斗设置在室主体的顶部并与衬底支撑基座相对。 气体注入漏斗偏离衬底支撑基座的中心轴线并且设置在低压区域中。

公开(公告)号：US20090283252A1

公开(公告)日：2009-11-19

申请号：US12122616

申请日：2008-05-16

申请人： Tao Hou ,  Son T. Nguyen ,  Kenric Choi ,  Anh N. Nguyen

发明人： Tao Hou ,  Son T. Nguyen ,  Kenric Choi ,  Anh N. Nguyen

IPC分类号： G05D23/00 ,  F28F1/10 ,  H05B1/00 ,  H05B1/02

CPC分类号： F28F7/02

摘要： A method and apparatus for heating or cooling a fluid. An inlet conduit coupled to a plurality of distribution nozzles in fluid communication with a channel at the periphery of the apparatus. An insert and a sleeve cooperatively define a thin gap, in fluid communication with the channel, through which the fluid flows. Thermal inserts near the thin gap generate heat flux into or out of the fluid, which exits through an outlet conduit.

摘要翻译： 一种用于加热或冷却流体的方法和装置。 连接到多个分配喷嘴的入口导管，与设备外围的通道流体连通。 插入件和套筒协同地限定与流体流体连通的薄间隙，流体流过该间隙。 在薄间隙附近的热插入物通过出口管道流出或流出流体。

公开(公告)号：US20090162952A1

公开(公告)日：2009-06-25

申请号：US11960300

申请日：2007-12-19

申请人： Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini ,  Michael J. Mark

发明人： Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini ,  Michael J. Mark

IPC分类号： H01L21/66 ,  C23C16/513

CPC分类号： H01L21/68742 ,  H01J37/321 ,  H01J37/32623 ,  H01L21/67069 ,  H01L21/68735

摘要： The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.

摘要翻译： 本发明总体上提供了用于在处理过程中控制边缘性能的方法和装置。 本发明的一个实施例提供了一种装置，其包括限定处理体积的室主体，被配置为将处理气体流入处理体积的气体入口以及设置在处理体积中的支撑基座。 支撑基座包括具有基板支撑表面的顶板，该基板支撑表面被配置为在背面上接收和支撑基板;以及边缘表面，其被构造成沿着基板的外边缘围绕基板，以及在基板的顶表面之间的高度差 基板和边缘表面用于控制基板的边缘区域对处理气体的曝光。

公开(公告)号：US07311810B2

公开(公告)日：2007-12-25

申请号：US10823849

申请日：2004-04-13

申请人： Yeuk-Fai Edwin Mok ,  Son T. Nguyen

发明人： Yeuk-Fai Edwin Mok ,  Son T. Nguyen

IPC分类号： C25D17/00

CPC分类号： H01L21/67109 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/68707

摘要： Embodiments of the invention generally provide an annealing apparatus and method for a semiconductor processing platform. The annealing apparatus includes a plurality of isolated annealing chambers, wherein each of the annealing chambers has a heating plate positioned in a sealed processing volume, a cooling plate positioned in the processing volume, and a substrate transfer mechanism positioned in the processing volume and configured to transfer substrates between the heating plate and the cooling plate. The annealing system further includes a gas supply source selectively in communication with each of the individual annealing chambers.

摘要翻译： 本发明的实施例通常提供一种用于半导体处理平台的退火装置和方法。 退火装置包括多个隔离退火室，其中每个退火室具有位于密封处理体积中的加热板，位于处理体积中的冷却板和位于处理体积中的基板传送机构， 在加热板和冷却板之间传送基板。 退火系统还包括选择性地与各个退火室连通的气体供应源。

公开(公告)号：US06311959B1

公开(公告)日：2001-11-06

申请号：US09298319

申请日：1999-04-22

申请人： Son T. Nguyen ,  Scott Hendrickson

发明人： Son T. Nguyen ,  Scott Hendrickson

IPC分类号： B01F304

CPC分类号： C23C16/4482

摘要： Method and apparatus generate a mixture of the vapor of an organic liquid such as tetraethylorthosilicate (TEOS) and an inert gas such as helium. The ratio of organic vapor to inert gas in the mixture is accurately and continuously controlled as required in semiconductor manufacturing. The apparatus encloses a bubbler chamber which is filled with an organic liquid (e.g., TEOS) to a set level that is automatically maintained. The liquid is also maintained at an exact temperature (e.g., 75° C.). Inert gas (e.g., helium) flows into the bubbler chamber at a controlled rate and continuously evaporates some of the liquid therein. The flow of liquid into the bubbler chamber is monitored by a liquid control circuit, and flow of gas is controlled by a gas control circuit. A feedback signal from the liquid control circuit to the gas control circuit incrementally adjusts gas flow into the bubbler chamber to keep the liquid therein at the set level.

摘要翻译： 方法和装置产生有机液体的蒸汽如原硅酸四乙酯（TEOS）和惰性气体如氦气的混合物。 混合物中的有机蒸气与惰性气体的比率在半导体制造中按要求精确和连续地控制。 该装置包围一个充满有机液体（例如，TEOS）的起泡室至一个被自动维持的设定水平。 液体也保持在精确的温度（例如75℃）。 惰性气体（例如氦气）以受控的速率流入起泡室，并连续蒸发其中的一些液体。 液体进入起泡室的流量由液体控制回路监测，气体流量由气体控制回路控制。 从液体控制电路到气体控制电路的反馈信号逐渐地调节进入起泡器室的气体流量，以将液体保持在设定水平。