发明申请
- 专利标题： DUAL ZONE GAS INJECTION NOZZLE
- 专利标题（中）： 双区气体喷射喷嘴
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申请号： US13415753申请日： 2012-03-08
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公开(公告)号： US20120164845A1公开(公告)日： 2012-06-28
- 发明人: Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
- 申请人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/318
- IPC分类号： H01L21/318 ; H01L21/263
摘要：
The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.
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