公开(公告)号：US5773981A

公开(公告)日：1998-06-30

申请号：US708194

申请日：1996-09-06

申请人： Masayuki Sugiura ,  Shinichi Matsui ,  Tatsuyuki Yoneda ,  Kenji Suzuki

发明人： Masayuki Sugiura ,  Shinichi Matsui ,  Tatsuyuki Yoneda ,  Kenji Suzuki

IPC分类号： G01R31/02 ,  F16H61/00 ,  F16H61/02 ,  F16H61/12 ,  F16K31/06 ,  G01R31/00

CPC分类号： F16H61/12 ,  G01R31/007 ,  F16H2061/0078 ,  F16H2061/0255 ,  F16H2061/1208 ,  F16H2061/1268 ,  G01R31/025

摘要： A short between terminals of a linear solenoid controlled by an electronic control in an automatic transmission is detected by sensing when a PWM duty ratio set by a feedback control operating the linear solenoid is less than a reference duty ratio. The reference duty cycle is calculated to be between a range of expected normal duty ratios in the absence of the short and a range of expected short duty ratios in the presence of the short.

摘要翻译： 当通过操作线性螺线管的反馈控制设置的PWM占空比小于参考占空比时，通过检测来检测由自动变速器中的电子控制器控制的线性电磁线圈的端子之间的短路。 在存在短路的情况下，基准占空比被计算为在没有短路的预期正常占空比范围和期望的短占空比的范围之间。

公开(公告)号：US5426727A

公开(公告)日：1995-06-20

申请号：US161310

申请日：1993-12-03

申请人： Masayuki Sugiura ,  Masato Maeda

发明人： Masayuki Sugiura ,  Masato Maeda

IPC分类号： G06T11/20 ,  G09G5/24 ,  G06F3/14

CPC分类号： G09G5/24 ,  G06T11/20 ,  Y10S345/947

摘要： A character generation system, in which multiple operations are performed in parallel to achieve higher-speed processing, includes a circuit for converting character contour data into coordinate axis data, a circuit for generating dot data expressive of the contour from the coordinate axis data, a circuit for sorting the coordinate axis data in a prescribed sequence and a circuit for performing image drawing operations in correspondence with the sorted data. At least two of these circuits include sufficient channels to permit the performance of their designated functions in parallel. The required image drawing time is reduced by a decrease in the required number of accesses to a bit map using a polygon approach to character generation. The invention selects only the starting point and terminating point for its image drawing process out of the coordinates which form the polygon and draws a character on the bit map while generating the coordinates incremented by a predetermined value from the starting point to the terminating point. The invention also relates to a method for image drawing.

摘要翻译： 并行执行多个操作以实现更高速处理的字符生成系统包括用于将字符轮廓数据转换为坐标轴数据的电路，用于从坐标轴数据生成表示轮廓的点数据的电路， 用于按照规定的顺序排列坐标轴数据的电路和用于与排序的数据相对应的图像绘制操作的电路。 这些电路中至少有两个电路包括足以允许并行执行其指定功能的通道。 所需的图像绘制时间通过使用多边形方法对字符生成的对位图的访问所需数量的减少而减少。 本发明仅从形成多边形的坐标中仅选择其图像绘制过程的起始点和终止点，并在位图上绘制字符，同时生成从起点到终止点增加预定值的坐标。 本发明还涉及一种用于图像绘制的方法。

公开(公告)号：USD812543S1

公开(公告)日：2018-03-13

申请号：US29581759

申请日：2016-10-21

申请人： Lu Yi ,  Masayuki Sugiura ,  Masahiko Nakamura

设计人： Lu Yi ,  Masayuki Sugiura ,  Masahiko Nakamura

公开(公告)号：US08753423B2

公开(公告)日：2014-06-17

申请号：US13516945

申请日：2010-12-08

申请人： Masayuki Sugiura ,  Masakazu Mori ,  Takahiro Yoshino

发明人： Masayuki Sugiura ,  Masakazu Mori ,  Takahiro Yoshino

IPC分类号： C22B9/00 ,  F27D27/00

CPC分类号： C21C1/06 ,  C21C1/02 ,  C21C1/04 ,  C21C7/064 ,  F27D27/00

摘要： A method for stirring chrome-containing molten iron comprises mechanically stirring chrome-containing molten iron contained in a refining vessel by the use of an impeller having a rotation axis in the vertical direction where the refining vessel is such that the horizontal cross section of the inner wall thereof is circular around the central axis of the vessel in the vertical direction and the impeller, as integrated with the axial rod covered with a refractory, rotates around the central axis of the axial rod, as the rotation axis thereof. The stirring mode is regularly or irregularly switched between a concentric stirring of the molten iron in a state where the rotation axis of the impeller is centered in the central axis of the vessel and an eccentric stirring of the molten iron in a state where the rotation axis of the impeller is decentered from the central axis of the vessel.

摘要翻译： 一种用于搅拌含铬熔融铁的方法包括通过使用具有在精炼容器的垂直方向上的旋转轴线的叶轮将包含在精炼容器中的含铬熔融铁机械搅拌使得内部 其壁在垂直方向上围绕容器的中心轴线是圆形的，并且与被覆盖有耐火材料的轴向杆一体化的叶轮围绕轴杆的中心轴线旋转，作为其旋转轴。 在叶轮的旋转轴线位于容器的中心轴线的状态和铁水的偏心搅拌状态下，在铁水的同心搅拌之间，搅拌模式被规则地或不规则地切换， 的叶轮偏离容器的中心轴线。

公开(公告)号：USD683660S1

公开(公告)日：2013-06-04

申请号：US29416795

申请日：2012-03-27

申请人： Masayuki Sugiura ,  Satoshi Kimura ,  Hiroshi Okamoto ,  Lu Yi

设计人： Masayuki Sugiura ,  Satoshi Kimura ,  Hiroshi Okamoto ,  Lu Yi

公开(公告)号：US20120153396A1

公开(公告)日：2012-06-21

申请号：US13227641

申请日：2011-09-08

申请人： Masayuki Sugiura ,  Toshiki Seshita ,  Yoshimoto Sagae

发明人： Masayuki Sugiura ,  Toshiki Seshita ,  Yoshimoto Sagae

IPC分类号： H01L27/06

CPC分类号： H01L27/1203 ,  H03K17/6871 ,  H03K17/693

摘要： According to an embodiment, a semiconductor device including a switch circuit includes a first gate electrode provided between a source region and a drain region of an FET and a second gate electrode provided between the first gate electrode and the drain region. The semiconductor device also includes a control terminal electrically connected to an intermediate region between the first gate electrode and the second gate electrode, the control terminal being placed at a ground potential corresponding to ON state of the FET, and the control terminal being placed at a positive potential or a negative potential corresponding to OFF state of the FET.

摘要翻译： 根据实施例，包括开关电路的半导体器件包括设置在FET的源极区域和漏极区域之间的第一栅极电极和设置在第一栅极电极和漏极区域之间的第二栅极电极。 半导体器件还包括电连接到第一栅电极和第二栅电极之间的中间区域的控制端子，控制端子被置于对应于FET的导通状态的接地电位，并且控制端子被置于 正电位或对应于FET的OFF状态的负电位。

公开(公告)号：US20100001347A1

公开(公告)日：2010-01-07

申请号：US12495953

申请日：2009-07-01

申请人： Masayuki SUGIURA

发明人： Masayuki SUGIURA

IPC分类号： H01L27/12

CPC分类号： H01L27/1203 ,  H01L27/0274 ,  H01L29/78615

摘要： An electrostatic discharge protection device, comprising: a metal oxide semiconductor field effect transistor (MOSFET) formed on an SOI substrate, the MOSFET including a drain region connected to an input/output terminal, a source region connected to a ground terminal, a body region, a gate electrode above the body region, and a body contact region; and a trigger circuit including a diode array having at least one diode connected in series in the forward direction between the input/output terminal, and the gate electrode and the body contact region of the MOSFET, and a resistance portion connected between the ground terminal, and the gate electrode and the body contact region of the MOSFET.

摘要翻译： 一种静电放电保护装置，包括：形成在SOI衬底上的金属氧化物半导体场效应晶体管（MOSFET），所述MOSFET包括连接到输入/输出端子的漏极区域，连接到接地端子的源极区域， ，身体区域上方的栅电极，以及身体接触区域; 以及触发电路，包括具有至少一个二极管阵列的二极管阵列，所述二极管阵列具有至少一个二极管，其串联连接在所述输入/输出端子与所述MOSFET的所述栅电极和所述体接触区域之间的正向上;以及电阻部分， 以及MOSFET的栅电极和体接触区域。

公开(公告)号：US07088186B2

公开(公告)日：2006-08-08

申请号：US11060548

申请日：2005-02-18

申请人： Masayuki Sugiura

发明人： Masayuki Sugiura

IPC分类号： H03F3/14

CPC分类号： H01L23/3677 ,  H01L23/50 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/665 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H03F3/189 ,  H01L2924/00014 ,  H01L2924/00

摘要： A ground layer is provided between a first and a second wiring layer. A first transistor provided at the first wiring layer amplifies a supplied high-frequency signal. A second transistor provided at the first wiring layer amplifies the output signal of the first transistor. A first power supply line, which supplies power to the first transistor, is provided at the first wiring layer. A second power supply line, which supplies power to the second transistor, is provided at the second wiring layer.

摘要翻译： 在第一和第二布线层之间设置接地层。 设置在第一布线层的第一晶体管放大提供的高频信号。 设置在第一布线层的第二晶体管放大第一晶体管的输出信号。 在第一布线层设置有向第一晶体管供电的第一电源线。 在第二布线层设置有向第二晶体管供电的第二电源线。

公开(公告)号：US07084708B2

公开(公告)日：2006-08-01

申请号：US10888496

申请日：2004-07-12

申请人： Masayuki Sugiura ,  Makoto Shibamiya ,  Yasuhiko Kuriyama ,  Toru Sugiyama ,  Yoshikazu Tanabe

发明人： Masayuki Sugiura ,  Makoto Shibamiya ,  Yasuhiko Kuriyama ,  Toru Sugiyama ,  Yoshikazu Tanabe

IPC分类号： H03F3/04

CPC分类号： H01L23/66 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/5223 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/16 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/20758 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H03F3/601 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00011

摘要： A high-frequency amplification device includes a high-frequency amplifier including input and output sections, a first capacitor including first and second electrodes, and a first insulation film interposed therebetween. The first electrode is connected to the output section via a first inductor, and the second electrode is grounded. The amplification device further comprises a second capacitor including third and fourth electrodes and a second insulation film interposed therebetween. The third electrode is formed of a material substantially identical to that of the first electrode, and the fourth electrode is formed of a material substantially identical to that of the second electrode. The second insulation film is formed of a material substantially identical to that of the first insulation film and has a thickness substantially identical to that of the first insulation film.

摘要翻译： 高频放大装置包括具有输入和输出部分的高频放大器，包括第一和第二电极的第一电容器和介于它们之间的第一绝缘膜。 第一电极通过第一电感器连接到输出部分，第二电极接地。 放大装置还包括包括第三和第四电极的第二电容器和介于其间的第二绝缘膜。 第三电极由与第一电极基本相同的材料形成，第四电极由与第二电极基本上相同的材料形成。 第二绝缘膜由与第一绝缘膜基本上相同的材料形成，并且具有与第一绝缘膜的厚度基本相同的厚度。

公开(公告)号：US20050174874A1

公开(公告)日：2005-08-11

申请号：US11060548

申请日：2005-02-18

申请人： Masayuki Sugiura

发明人： Masayuki Sugiura

IPC分类号： G11C8/00 ,  H01L23/367 ,  H01L23/50 ,  H01L23/52 ,  H01L23/66 ,  H03F3/189

CPC分类号： H01L23/3677 ,  H01L23/50 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/665 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H03F3/189 ,  H01L2924/00014 ,  H01L2924/00

摘要： A ground layer is provided between a first and a second wiring layer. A first transistor provided at the first wiring layer amplifies a supplied high-frequency signal. A second transistor provided at the first wiring layer amplifies the output signal of the first transistor. A first power supply line, which supplies power to the first transistor, is provided at the first wiring layer. A second power supply line, which supplies power to the second transistor, is provided at the second wiring layer.

摘要翻译： 在第一和第二布线层之间设置接地层。 设置在第一布线层的第一晶体管放大提供的高频信号。 设置在第一布线层的第二晶体管放大第一晶体管的输出信号。 在第一布线层设置有向第一晶体管供电的第一电源线。 在第二布线层设置有向第二晶体管供电的第二电源线。