知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

1392 条记录 (耗时 0.034 秒)

    FORMATION OF SiOC THIN FILMS
    41.
    发明申请
    FORMATION OF SiOC THIN FILMS 有权

    公开(公告)号：US20230132743A1

    公开(公告)日：2023-05-04

    申请号：US18146868

    申请日：2022-12-27

    申请人： ASM IP HOLDING B.V.

    发明人： Toshiya Suzuki ,  Viljami J. Pore ,  Hannu Huotari

    IPC分类号： H01L21/02 ,  C23C16/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

    摘要： Disclosed is a process for forming a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space by a plurality of deposition cycles. At least one deposition cycle includes contacting a surface of the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that includes reactive species. The reactive species are generated from a gas that flows continuously to the reaction space throughout the at least one deposition cycle. A ratio of a wet etch rate of the SiOC thin film to a wet etch rate of thermal silicon oxide is less than 5.

    METHOD OF FORMING A STRUCTURE INCLUDING A SILICON CARBIDE LAYER
    44.
    发明申请
    METHOD OF FORMING A STRUCTURE INCLUDING A SILICON CARBIDE LAYER 有权

    公开(公告)号：US20230043629A1

    公开(公告)日：2023-02-09

    申请号：US17865580

    申请日：2022-07-15

    申请人： ASM IP Holding B.V.

    发明人： Yoshio Susa

    IPC分类号： C23C16/32 ,  C23C16/04 ,  C23C16/455

    摘要： Methods and systems for forming a structure including a silicon carbide layer and structures formed using the methods and systems are disclosed. Exemplary methods include providing a silicon carbide precursor to the reaction chamber, forming a plasma within the reaction chamber to form an initially flowable, viscous silicon carbide material on a surface of the substrate, wherein the initially viscous carbon material becomes the silicon carbide layer. Exemplary methods can include use of a silicon carbide precursor that includes a carbon-carbon triple bond and/or use of a relatively low plasma power density (e.g., less than 3 W/cm2).

    Systems and methods for cleaning low-k deposition chambers
    45.
    发明授权
    Systems and methods for cleaning low-k deposition chambers 有权

    公开(公告)号：US11572622B2

    公开(公告)日：2023-02-07

    申请号：US17020256

    申请日：2020-09-14

    申请人： Applied Materials, Inc.

    发明人： Bo Xie ,  Ruitong Xiong ,  Kang Sub Yim ,  Yijun Liu ,  Li-Qun Xia ,  Sure K. Ngo

    IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/32 ,  C23C16/50 ,  H01J37/32 ,  B08B7/00

    摘要： Exemplary semiconductor processing methods to clean a substrate processing chamber are described. The methods may include depositing a dielectric film on a first substrate in a substrate processing chamber, where the dielectric film may include a silicon-carbon-oxide. The first substrate having the dielectric film may be removed from the substrate processing chamber, and the dielectric film may be deposited on at least one more substrate in the substrate processing chamber. The at least one more substrate may be removed from the substrate processing chamber after the dielectric film is deposited on the substrate. Etch plasma effluents may flow into the substrate processing chamber after the removal of a last substrate having the dielectric film. The etch plasma effluents may include greater than or about 500 sccm of NF3 plasma effluents, and greater than or about 1000 sccm of O2 plasma effluents.

    METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER OF MONOCRYSTALLINE SIC ON AN SIC CARRIER SUBSTRATE
    46.
    发明申请
    METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER OF MONOCRYSTALLINE SIC ON AN SIC CARRIER SUBSTRATE 有权

    公开(公告)号：US20220415653A1

    公开(公告)日：2022-12-29

    申请号：US17756609

    申请日：2020-10-26

    申请人： Soitec

    发明人： Hugo Biard

    IPC分类号： H01L21/02 ,  H01L21/306 ,  C30B29/36 ,  C30B25/20 ,  C23C14/48 ,  C23C16/448 ,  C23C16/32 ,  C23C16/56 ,  C23C16/01

    摘要： A process for manufacturing a composite structure comprises: a) providing an initial substrate made of monocrystalline silicon carbide, b) epitaxially growing a monocrystalline silicon carbide donor layer on the initial substrate to form a donor substrate 111, c) implanting ions into the donor layer to form a buried brittle plane defining the the donor layer, d) depositing, using liquid injection-chemical vapor deposition at a temperature below 1000° C., a carrier layer on the donor layer, the carrier layer comprising an at least partially amorphous SiC matrix, e) separating the donor substrate along the brittle plane to form an intermediate composite structure comprising the donor layer on the carrier layer f) heat treating the intermediate composite structure at a temperature of between 1000° C. and 1800° C. to crystallize the carrier layer and form the polycrystalline carrier substrate, and g) applying mechanical and/or chemical treatment(s) of the composite structure.

    Process for the generation of metal- or semimetal-containing films
    50.
    发明授权
    Process for the generation of metal- or semimetal-containing films 有权

    公开(公告)号：US11505865B2

    公开(公告)日：2022-11-22

    申请号：US17259666

    申请日：2019-07-04

    申请人： BASF SE

    发明人： David Dominique Schweinfurth ,  Lukas Mayr ,  Sinja Verena Klenk ,  David Scheschkewitz ,  Kinga Izabela Leszczynska

    IPC分类号： C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455

    摘要： The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R′ are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group.