公开(公告)号：US20140023104A1

公开(公告)日：2014-01-23

申请号：US13942067

申请日：2013-07-15

申请人： Ryoichiro SUZUKI ,  Shunichi SATO

发明人： Ryoichiro SUZUKI ,  Shunichi SATO

IPC分类号： H01S5/42

CPC分类号： H01S5/423 ,  G04F5/14 ,  G04F5/145 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18344 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/4087

摘要： A surface emitting laser device includes a substrate, a lower reflector, an active layer, an upper reflector, and surface emitting lasers configured to emit light. A second phase adjustment layer, a contact layer, a first phase adjustment layer, and a wavelength adjustment layer are successively layered from the active layer side. The total optical thickness from the active layer side of the second phase adjustment layer to the midsection of the wavelength adjustment layer is approximately (2N+1)×λ/4, where λ represents a wavelength of light, and N represents a positive integer. The optical thickness from the active layer side of the second phase adjustment layer to the midsection of the contact layer is approximately Nλ/2. At least two of the surface emitting lasers have the wavelength adjustment layer arranged at different thicknesses and are configured to emit light with different wavelengths.

摘要翻译： 表面发射激光器件包括衬底，下反射器，有源层，上反射器和被配置为发光的表面发射激光器。 从有源层侧依次层叠第二相位调整层，接触层，第一相位调整层和波长调整层。 从第二相位调整层的有源层侧到波长调整层的中部的总光学厚度大致为（2N + 1）×λ/ 4，其中λ表示光的波长，N表示正整数。 从第二相位调整层的有源层侧到接触层的中部的光学厚度近似为Nλ/ 2。 至少两个表面发射激光器具有布置成不同厚度的波长调整层，并且被配置为发射具有不同波长的光。

公开(公告)号：US08594146B2

公开(公告)日：2013-11-26

申请号：US12865951

申请日：2009-02-09

申请人： Naoto Jikutani ,  Satoru Sugawara ,  Shunichi Sato

发明人： Naoto Jikutani ,  Satoru Sugawara ,  Shunichi Sato

IPC分类号： H01S5/00

CPC分类号： B41J2/45 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/18358 ,  H01S5/423 ,  H01S2301/166 ,  H04N1/113 ,  H04N1/1215

摘要： A surface emitting laser element is disclosed. The surface emitting laser element includes a resonator structural body including an active layer, first and second semiconductor distributed Bragg reflectors which sandwich the resonator structural body, and a confinement structure which can confine an injection current and a lateral mode of oscillation light at the same time by being formed with selective oxidation of a layer to be selectively oxidized containing aluminum in the first semiconductor distributed Bragg reflector. A thickness of the layer to be selectively oxidized is 28 nm, and a temperature when an oscillation threshold current becomes a minimum value is approximately 17° C.

摘要翻译： 公开了一种表面发射激光器元件。 表面发射激光元件包括具有活性层的谐振器结构体，夹着谐振器结构体的第一和第二半导体分布布拉格反射器，以及同时限制注入电流和侧向振荡光模式的约束结构 通过在第一半导体分布布拉格反射器中通过选择性氧化含有铝的选择性氧化而含有铝。 要选择性氧化的层的厚度为28nm，振荡阈值电流变为最小值时的温度约为17℃。

公开(公告)号：US20130258454A1

公开(公告)日：2013-10-03

申请号：US13792514

申请日：2013-03-11

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Fei Ding ,  Armin W. Knoll ,  Rainer F. Mahrt ,  Thilo H. Stoeferle

IPC分类号： H01S3/08

CPC分类号： H01S3/08 ,  G02B5/288 ,  H01S3/08059 ,  H01S5/1042 ,  H01S5/18344

摘要： A vertical microcavity having a layer structure perpendicular to a vertical axis z, includes a first reflector and a second reflector, each comprising one or more material layers; a confinement layer between the reflectors, wherein an electromagnetic wave can be substantially confined, the confinement layer having a body and a defect delimited by first and second surfaces, perpendicular to the vertical axis z; wherein one of the two surfaces is contiguous with the body, the other one contiguous with a layer of the first or second reflector, and wherein one of the two surfaces has a curved profile in at least a plane section perpendicular to the layer structure, the curved profile having a vertex, which defines a maximal thickness h0 of the defect between the first surface and the second surface in the plane section, the maximal thickness h0 being less than a thickness of the contiguous layer.

摘要翻译： 具有垂直于垂直轴线z的层结构的垂直微腔包括第一反射器和第二反射器，每个包括一个或多个材料层; 反射器之间的限制层，其中可以基本上限制电磁波，所述约束层具有垂直于垂直轴线z的由第一和第二表面限定的主体和缺陷; 其中两个表面中的一个与主体相邻，另一个与第一或第二反射器的层相邻，并且其中两个表面中的一个在垂直于层结构的至少一个平面截面中具有弯曲轮廓， 具有顶点的弯曲轮廓，其限定平面部分中的第一表面和第二表面之间的缺陷的最大厚度h0，最大厚度h0小于连续层的厚度。

公开(公告)号：US08481350B2

公开(公告)日：2013-07-09

申请号：US13537340

申请日：2012-06-29

申请人： Ralph H. Johnson ,  James Guenter

发明人： Ralph H. Johnson ,  James Guenter

IPC分类号： H01L21/00

CPC分类号： H01S5/18361 ,  H01L33/0045 ,  H01L33/105 ,  H01S5/0425 ,  H01S5/18344 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3077

摘要： Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.

摘要翻译： 制造具有改善的导电性和反射性以及最小吸收的光学器件的方法。 步骤包括形成设计成反射具有峰值和零点的光场的多个反射镜周期。 形成多个次周期的一部分包括形成厚度小于光场四分之一波长的第一层; 在第一层上形成第一组合斜面; 并且在所述组成斜面上形成第二层，所述第二层具有与所述第一层不同的折射率，并且具有使得所述光学场的零点发生在所述第二层内而不在所述组成斜面内的厚度，并且其中形成 第二层还包括在光场的零点的位置处重掺杂第二层。

公开(公告)号：US20120270346A1

公开(公告)日：2012-10-25

申请号：US13537340

申请日：2012-06-29

申请人： Ralph H. Johnson ,  James Guenter

发明人： Ralph H. Johnson ,  James Guenter

IPC分类号： H01L33/60

CPC分类号： H01S5/18361 ,  H01L33/0045 ,  H01L33/105 ,  H01S5/0425 ,  H01S5/18344 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3077

摘要： Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.

摘要翻译： 制造具有改善的导电性和反射性以及最小吸收的光学器件的方法。 步骤包括形成设计成反射具有峰值和零点的光场的多个反射镜周期。 形成多个次周期的一部分包括形成厚度小于光场四分之一波长的第一层; 在第一层上形成第一组合斜面; 并且在所述组成斜面上形成第二层，所述第二层具有与所述第一层不同的折射率，并且具有使得所述光学场的零点发生在所述第二层内而不在所述组成斜面内的厚度，并且其中形成 第二层还包括在光场的零点的位置处重掺杂第二层。

公开(公告)号：US20110294236A1

公开(公告)日：2011-12-01

申请号：US13137339

申请日：2011-08-08

申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

IPC分类号： H01L21/66

CPC分类号： H01S5/18347 ,  H01L22/12 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/0042 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/423 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.

摘要翻译： 提供了一种能够大幅提高成品率的半导体器件的制造方法以及使用该方法制造的半导体器件。 在基板上形成半导体层之后，对于每个单位芯片区域，在半导体层中形成具有至少一个参数值彼此不同的多个功能部分。 然后，对根据参数值进行变更的被摄体进行测量和评价，之后，对于每个芯片区域分割基板，使得作为评价结果的与给定标准对应的功能部分不被破坏。 由此，通过适当地调整每个参数值，可以通过每个芯片面积形成与给定标准对应的至少一个功能部分。

公开(公告)号：US08031752B1

公开(公告)日：2011-10-04

申请号：US12340286

申请日：2008-12-19

申请人： Ralph H. Johnson ,  James K. Guenter ,  James R. Biard

发明人： Ralph H. Johnson ,  James K. Guenter ,  James R. Biard

IPC分类号： H01S5/00

CPC分类号： H01S5/18358 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/18361 ,  H01S5/305 ,  H01S5/3077 ,  H01S5/3211

摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) is optimized for longer life of the VCSEL by controlling the distance of doped and undoped layers near an active region. In addition, the VCSEL optimized for reduced parasitic lateral current under an oxide of the VCSEL by forming a high Al confinement region and placing the oxide at a null in a standing optical wave. Further, the VCSEL is optimized to reduce resistance.

摘要翻译： 垂直腔表面发射激光器（VCSEL）通过控制有源区域附近的掺杂层和未掺杂层的距离来优化VCSEL的更长寿命。 此外，VCSEL通过形成高Al限制区域并将氧化物置于无效的静态光波中而优化用于在VCSEL的氧化物下降低的寄生横向电流。 此外，VCSEL被优化以降低电阻。

公开(公告)号：US20100035372A1

公开(公告)日：2010-02-11

申请号：US12587753

申请日：2009-10-13

申请人： Hans-Peter Gauggel ,  Paul Royo

发明人： Hans-Peter Gauggel ,  Paul Royo

IPC分类号： H01L21/30

CPC分类号： H01S5/423 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/2063

摘要： A method of adjusting a power density in a laser device including a VCSEL array providing an increased power density at a high wall-plug efficiency in that the lateral design parameters are appropriately selected on the basis of a relationship that has been established for a specified vertical design, a corresponding process technology and specified operating conditions. Thus, the total output power, the power density, and the efficiency may be optimized independently from other design criteria and application requirements by tuning only the lateral size of the individual VCSEL elements and the pitch of nearest neighbors of the elements within the array. Hence, for a lateral size of less than 30 μm and a pitch of less than 80 μm, a highly efficient VCSEL array can be provided with a high power density, thereby optimizing manufacturing costs for the output power per chip area.

摘要翻译： 一种在包括VCSEL阵列的激光装置中调节功率密度的方法，该VCSEL阵列在高壁插塞效率下提供增加的功率密度，因为侧向设计参数是基于已经针对特定垂直线建立的关系来适当地选择的 设计，相应的工艺技术和规定的工作条件。 因此，通过仅调整各个VCSEL元件的横向尺寸和阵列内的元件的最近邻的间距，可以独立于其他设计标准和应用要求来优化总输出功率，功率密度和效率。 因此，对于小于30μm的横向尺寸和小于80μm的间距，可以提供高功率密度的高效VCSEL阵列，从而优化每个芯片面积的输出功率的制造成本。

公开(公告)号：US07551660B2

公开(公告)日：2009-06-23

申请号：US10513364

申请日：2003-05-05

申请人： Stephan Lutgen

发明人： Stephan Lutgen

IPC分类号： H01S5/00 ,  H01S3/09 ,  H01S3/091

CPC分类号： H01S5/1835 ,  H01S5/026 ,  H01S5/041 ,  H01S5/1071 ,  H01S5/141 ,  H01S5/18344 ,  H01S5/4056

摘要： An optically pumped semiconductor laser apparatus. The apparatus includes a vertical emitter which has a central waveguide and a quantum well structure which is arranged within the central waveguide and has at least one quantum layer. The apparatus also includes a pump radiation source, which optically pumps the quantum well structure and comprises at least one pump waveguide in which the pump radiation is guided. The width of the central waveguide is greater than the width of the pump waveguide, with the width of the central waveguide and the width of the pump waveguide being matched to one another such that the quantum well structure of the vertical emitter is pumped uniformly.

摘要翻译： 光泵浦半导体激光装置。 该装置包括垂直发射器，其具有布置在中心波导内并具有至少一个量子层的中心波导和量子阱结构。 该装置还包括泵浦辐射源，其泵浦量子阱结构并且包括泵浦辐射被引导的至少一个泵浦波导。 中心波导的宽度大于泵浦波导的宽度，中心波导的宽度和泵浦波导的宽度彼此匹配，使得垂直发射器的量子阱结构被均匀地泵浦。

公开(公告)号：US20070091961A1

公开(公告)日：2007-04-26

申请号：US11246739

申请日：2005-10-07

申请人： Chao-Kun Lin ,  Scott Corzine ,  Michael Tan

发明人： Chao-Kun Lin ,  Scott Corzine ,  Michael Tan

IPC分类号： H01S5/00

CPC分类号： H01S5/18313 ,  H01S5/18344 ,  H01S2301/176

摘要： The etched sidewalls of laterally oxidized VCSEL structures are coated with a dielectric film to inhibit oxidation of the DBR layers during the oxidation process. While oxidation of the DBR mirror layers is not completely eliminated, the number of DBR mirror layers that are oxidized is significantly reduced, thereby reducing the DBR oxide stress.

摘要翻译： 横向氧化的VCSEL结构的蚀刻侧壁涂覆有电介质膜，以在氧化过程中抑制DBR层的氧化。 虽然DBR镜层的氧化没有完全消除，但是被氧化的DBR镜层的数量显着降低，从而减少DBR氧化物应力。