摘要:
A surface emitting laser device includes a substrate, a lower reflector, an active layer, an upper reflector, and surface emitting lasers configured to emit light. A second phase adjustment layer, a contact layer, a first phase adjustment layer, and a wavelength adjustment layer are successively layered from the active layer side. The total optical thickness from the active layer side of the second phase adjustment layer to the midsection of the wavelength adjustment layer is approximately (2N+1)×λ/4, where λ represents a wavelength of light, and N represents a positive integer. The optical thickness from the active layer side of the second phase adjustment layer to the midsection of the contact layer is approximately Nλ/2. At least two of the surface emitting lasers have the wavelength adjustment layer arranged at different thicknesses and are configured to emit light with different wavelengths.
摘要:
A surface emitting laser for emitting light with a wavelength λ includes a first reflection mirror provided on a semiconductor substrate; a resonator region including an active layer provided on the first reflection mirror; a second reflection mirror, including plural low refraction index layers and plural high refraction index layers, provided on the resonator region; a contact layer provided on the second reflection mirror; a third reflection mirror provided on the contact layer; and an electric current narrowing layer provided between the active layer and the second reflection mirror or in the second reflection mirror. Optical lengths of at least one of thicknesses of the low refraction index layers and the high refraction index layers formed between the electric current narrowing layer and the contact layer are (2N+1)×λ/4 (N=1, 2, . . . ).
摘要:
A surface emitting laser element includes a lower Bragg reflection mirror; an upper Bragg reflection mirror; and a resonator region formed between the lower Bragg reflection mirror and the upper Bragg reflection mirror, and including an active layer. A wavelength adjustment region is formed in the lower Bragg reflection mirror or the upper Bragg reflection mirror, and includes a second phase adjustment layer, a wavelength adjustment layer and a first phase adjustment layer, arranged in this order from a side where the resonator region is formed. An optical thickness of the wavelength adjustment region is approximately (2N+1)×λ/4, and the wavelength adjustment layer is formed at a position where an optical distance from an end of the wavelength adjustment region on the side of the resonator region is approximately M×λ/2, where λ is a wavelength of emitted light, M and N are positive integers, and M is N or less.
摘要:
A surface emitting laser includes a first reflecting mirror; a second reflecting mirror; an active region between the first reflecting mirror and the second reflecting mirror. The first reflecting mirror and the second reflecting mirror each include a plurality of low refractive-index layers having a first refractive index; and a plurality of high refractive-index layers having a second refractive index higher than the first refractive index. The plurality of low refractive-index layers and the plurality of high refractive-index layers are alternated one after another. The plurality of high refractive-index layers of the first reflecting mirror includes a first layer; and a second layer having a higher thermal diffusion property in an in-plane direction than the first layer.