SURFACE EMITTING LASER DEVICE AND ATOMIC OSCILLATOR
    1.
    发明申请
    SURFACE EMITTING LASER DEVICE AND ATOMIC OSCILLATOR 有权
    表面发射激光器件和原子振荡器

    公开(公告)号:US20140023104A1

    公开(公告)日:2014-01-23

    申请号:US13942067

    申请日:2013-07-15

    IPC分类号: H01S5/42

    摘要: A surface emitting laser device includes a substrate, a lower reflector, an active layer, an upper reflector, and surface emitting lasers configured to emit light. A second phase adjustment layer, a contact layer, a first phase adjustment layer, and a wavelength adjustment layer are successively layered from the active layer side. The total optical thickness from the active layer side of the second phase adjustment layer to the midsection of the wavelength adjustment layer is approximately (2N+1)×λ/4, where λ represents a wavelength of light, and N represents a positive integer. The optical thickness from the active layer side of the second phase adjustment layer to the midsection of the contact layer is approximately Nλ/2. At least two of the surface emitting lasers have the wavelength adjustment layer arranged at different thicknesses and are configured to emit light with different wavelengths.

    摘要翻译: 表面发射激光器件包括衬底,下反射器,有源层,上反射器和被配置为发光的表面发射激光器。 从有源层侧依次层叠第二相位调整层,接触层,第一相位调整层和波长调整层。 从第二相位调整层的有源层侧到波长调整层的中部的总光学厚度大致为(2N + 1)×λ/ 4,其中λ表示光的波长,N表示正整数。 从第二相位调整层的有源层侧到接触层的中部的光学厚度近似为Nλ/ 2。 至少两个表面发射激光器具有布置成不同厚度的波长调整层,并且被配置为发射具有不同波长的光。

    SURFACE EMITTING LASER, SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR
    2.
    发明申请
    SURFACE EMITTING LASER, SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR 审中-公开
    表面发射激光,表面发射激光元件和原子振荡器

    公开(公告)号:US20170025820A1

    公开(公告)日:2017-01-26

    申请号:US15124456

    申请日:2015-02-24

    摘要: A surface emitting laser for emitting light with a wavelength λ includes a first reflection mirror provided on a semiconductor substrate; a resonator region including an active layer provided on the first reflection mirror; a second reflection mirror, including plural low refraction index layers and plural high refraction index layers, provided on the resonator region; a contact layer provided on the second reflection mirror; a third reflection mirror provided on the contact layer; and an electric current narrowing layer provided between the active layer and the second reflection mirror or in the second reflection mirror. Optical lengths of at least one of thicknesses of the low refraction index layers and the high refraction index layers formed between the electric current narrowing layer and the contact layer are (2N+1)×λ/4 (N=1, 2, . . . ).

    摘要翻译: 用于发射具有波长λ的光的表面发射激光器包括设置在半导体衬底上的第一反射镜; 包括设置在所述第一反射镜上的有源层的谐振器区域; 第二反射镜,包括设置在谐振器区域上的多个低折射率层和多个高折射率层; 设置在所述第二反射镜上的接触层; 设置在所述接触层上的第三反射镜; 以及设置在有源层和第二反射镜之间或第二反射镜中的电流变窄层。 形成在电流变窄层和接触层之间的低折射率层和高折射率层中的至少一个厚度的光学长度为(2N + 1)×λ/ 4(N = 1,2,...)。 。)。

    SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR
    3.
    发明申请
    SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR 审中-公开
    表面发射激光元件和原子振荡器

    公开(公告)号:US20170040771A1

    公开(公告)日:2017-02-09

    申请号:US15216834

    申请日:2016-07-22

    申请人: Ryoichiro SUZUKI

    发明人: Ryoichiro SUZUKI

    摘要: A surface emitting laser element includes a lower Bragg reflection mirror; an upper Bragg reflection mirror; and a resonator region formed between the lower Bragg reflection mirror and the upper Bragg reflection mirror, and including an active layer. A wavelength adjustment region is formed in the lower Bragg reflection mirror or the upper Bragg reflection mirror, and includes a second phase adjustment layer, a wavelength adjustment layer and a first phase adjustment layer, arranged in this order from a side where the resonator region is formed. An optical thickness of the wavelength adjustment region is approximately (2N+1)×λ/4, and the wavelength adjustment layer is formed at a position where an optical distance from an end of the wavelength adjustment region on the side of the resonator region is approximately M×λ/2, where λ is a wavelength of emitted light, M and N are positive integers, and M is N or less.

    摘要翻译: 表面发射激光元件包括下布拉格反射镜; 上布拉格反射镜; 以及形成在下布拉格反射镜和上布拉格反射镜之间并且包括有源层的谐振器区域。 波长调整区域形成在下布拉格反射镜或上布拉格反射镜中,并且包括第二相位调整层,波长调整层和第一相位调整层,其从谐振器区域为 形成。 波长调整区域的光学厚度大致为(2N + 1)×λ/ 4,波长调整层形成在从谐振器区域侧的波长调整区域的端部的光学距离为 大约M×λ/ 2,其中λ是发射光的波长,M和N是正整数,M是N或更小。