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公开(公告)号：US3113889A
公开(公告)日：1963-12-10
申请号：US86313859
申请日：1959-12-31
CPC分类号： H01L39/24 , C23C14/541 , H01B1/00 , Y10S505/819
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公开(公告)号：US3055775A
公开(公告)日：1962-09-25
申请号：US3515560
申请日：1960-06-10
CPC分类号： H01L39/24 , C22C13/00 , C23C14/24 , G11C11/44 , Y10S420/901 , Y10S505/805 , Y10S505/862 , Y10S505/882 , Y10T428/265 , Y10T428/31678
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公开(公告)号：US20190184480A1
公开(公告)日：2019-06-20
申请号：US16218459
申请日：2018-12-12
IPC分类号： B23K3/06 , H01L21/683 , H01L21/68 , H01L21/67 , H01L23/00 , H01L39/24 , B23K1/00 , B23K35/02
CPC分类号： B23K3/0623 , B23K1/0016 , B23K35/0222 , B23K35/264 , B23K2101/42 , H01L21/67092 , H01L21/681 , H01L21/6836 , H01L21/6838 , H01L24/03 , H01L39/143 , H01L39/24 , H01L39/248 , H01L2221/68309 , H01L2224/03003 , H01L2224/0311 , H01L2224/05109 , H01L2224/05113 , H01L2924/01322 , H01L2924/014
摘要： A method of making precise alignment and decal bonding of a pattern of solder preforms to a surface comprising cutting and placing a length of a solder ribbon onto a semiconductor release tape forming a solder ribbon and semiconductor release tape combination, placing the solder ribbon and semiconductor release tape combination on a vacuum chuck on X-Y stage pair in a laser micromachining system, adjusting the working distance, laser-cutting an outline, peeling off the solder ribbon, allowing the desired solder shape to remain, creating indexing holes, providing a target surface on an alignment fixture with indexing pins, aligning the indexing holes, placing the semiconductor release tape with the desired solder shape on the target surface, pressing the desired solder shape onto the target surface, removing the release tape, and making a pattern of the desired solder shape with precise alignment and decal bonding on the target surface.
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公开(公告)号：US10074764B2
公开(公告)日：2018-09-11
申请号：US15280369
申请日：2016-09-29
IPC分类号： H01L31/115 , H01L31/18 , G01N23/083 , G01T1/12 , G01T1/36 , H01L39/24 , H01L21/027 , G21K1/10 , H01L31/08 , G01T1/00
CPC分类号： H01L31/18 , G01N23/083 , G01T1/006 , G01T1/36 , G21K1/10 , H01L21/027 , H01L31/085 , H01L39/00 , H01L39/223 , H01L39/24 , H01L39/2406 , Y02P70/521
摘要： A method of forming low-energy x-ray absorbers. Sensors may be formed on a semiconductor, e.g., silicon, wafer. A seed metal layer, e.g., gold, is deposited on the wafer and patterned into stem pads for electroplating. Stems, e.g., gold, are electroplated from the stem seed pads through a stem mask. An absorber layer, e.g., gold, is deposited on the wafer, preferably e-beam evaporated. After patterning the absorbers, absorber and stem mask material is removed, e.g., in a solvent bath and critical point drying.
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公开(公告)号：US20180115257A1
公开(公告)日：2018-04-26
申请号：US15331328
申请日：2016-10-21
申请人： FLOE CO., LTD.
摘要： A manufacturing method and application for an quantum superconductor rectifier, wherein the quantum superconductor rectifier comprises: a carrier in a definite shape; wherein atomic nuclei in components of said carrier are excited to vibration by a strong magnetic field, thus when the cumulative atomic nuclei in components of said carrier transmit nuclear spectra, energy is quantized and a signal from nuclear magnetic resonance results as a strong cutting line, wherein overloaded conductive molecules in a current loop are cut and separated and wherein the Van der Waals forces between the molecules are broken. Thereby interference by electrical resistance is reduced and more effectiveness is achieved.
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46.发明申请公开(公告)号：US20160351303A1
公开(公告)日：2016-12-01
申请号：US15167535
申请日：2016-05-27
申请人： Ambature, Inc.
CPC分类号： H01B12/06 , B05D1/36 , H01B1/08 , H01B12/14 , H01C7/00 , H01L39/12 , H01L39/125 , H01L39/126 , H01L39/24 , H01L39/2419 , H01L39/2464 , H01L39/2487 , Y10T428/31678
摘要： Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
摘要翻译： 通过在ELR膜的适当表面上沉积改性材料以产生改性的ELR膜，可以改善由ELR材料构成的极低电阻（“ELR”）膜的操作特性。 在本发明的一些实施方案中，ELR膜可以是“c膜”的形式。在本发明的一些实施方案中，ELR膜可以是“ab膜”的形式，“a膜” “或”b膜“。改性的ELR膜具有比单独的ELR膜或没有改性材料改善的操作特性。 这种操作特征可以包括在升高的温度下操作ELR状态，携带额外的电荷，以改进的磁性能操作，以改进的机械性能或其他改进的操作特性进行操作。 在本发明的一些实施方案中，ELR材料是混合价态的氧化铜 - 钙钛矿，例如但不限于YBCO。 在本发明的一些实施方案中，改性材料是易于氧接触的导电材料，例如但不限于铬。
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47.发明授权公开(公告)号：US09508469B2
公开(公告)日：2016-11-29
申请号：US14775640
申请日：2014-02-05
发明人： Yuko Okuno , Yoshikazu Okuno , Yoshinori Nagasu , Masaru Higuchi
CPC分类号： H01B12/06 , H01B13/0036 , H01L39/02 , H01L39/143 , H01L39/24 , H01L39/2454
摘要： A peelable superconductive conductor comprising a superconductive conductor including a substrate and a superconducting layer which is formed on one principal surface of the substrate. The peelable superconductive conductor can further comprise a peelable carrier body, which is formed on a principal surface of the superconductive conductor on an opposite side of the surface on which the superconducting layer is formed.
摘要翻译： 一种可剥离的超导导体，包括包含衬底的超导导体和形成在衬底的一个主表面上的超导层。 可剥离超导导体还可以包括可剥离的载体，其形成在超导体的主表面上，在其上形成有超导层的表面的相反侧。
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公开(公告)号：US09455073B2
公开(公告)日：2016-09-27
申请号：US14259455
申请日：2014-04-23
CPC分类号： H01B12/02 , H01L39/22 , H01L39/24 , Y10S505/704 , Y10S505/706
摘要： Provided are superconducting circuits, methods of operating these superconducting circuits, and methods of determining processing conditions for operating these superconducting circuits. A superconducting circuit includes a superconducting element, a conducting element, and a dielectric element disposed between the superconducting element and the conducting element. The conducting element may be another superconducting element, a resonating element, or a conducting casing. During operation of the superconducting element a direct current (DC) voltage is applied between the superconducting element and the conducting element. This application of the DC voltage reduces average microwave absorption of the dielectric element. In some embodiments, when the DC voltage is first applied, the microwave absorption may initially rise and then fall below the no-voltage absorption level. The DC voltage level may be determined by testing the superconducting circuit at different DC voltage levels and selecting the one with the lowest microwave absorption.
摘要翻译： 提供超导电路，操作这些超导电路的方法以及确定用于操作这些超导电路的处理条件的方法。 超导电路包括超导元件，导电元件和设置在超导元件和导电元件之间的介电元件。 导电元件可以是另一种超导元件，谐振元件或导电壳体。 在超导元件的操作期间，在超导元件和导电元件之间施加直流（DC）电压。 DC电压的这种应用降低了介电元件的平均微波吸收。 在一些实施例中，当首先施加DC电压时，微波吸收可以最初升高然后降低到无电压吸收水平以下。 直流电压电平可以通过在不同的直流电压电平下测试超导电路并选择具有最低微波吸收的电路来确定。
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49.发明授权公开(公告)号：US09362476B2
公开(公告)日：2016-06-07
申请号：US13593592
申请日：2012-08-24
申请人： Saw Wai Hla , Abdelrahim Hassanien , Kendal Clark
发明人： Saw Wai Hla , Abdelrahim Hassanien , Kendal Clark
CPC分类号： H01L39/24
摘要： A method of forming a superconductive device of a single layer of (BETS)2GaCl4 molecules on a substrate surface which displays a superconducting gap that increases exponentially with the length of the molecular chain is provided.
摘要翻译： 提供了在衬底表面上形成单层（BETS）2 GaCl 4分子的超导装置的方法，其显示出与分子链长度呈指数增长的超导间隙。
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50.发明申请METHODS FOR THE DEVELOPMENT OF COMMERCIAL SCALE NANO-ENGINEERED ULTRACONDUCTIVE COPPER WIRE 审中-公开开发商业规模纳米工程超导铜线的方法公开(公告)号：US20160151817A1
公开(公告)日：2016-06-02
申请号：US14907072
申请日：2014-07-23
CPC分类号： B21C23/002 , B21C23/001 , B21C37/04 , B21C37/047 , B22D17/04 , B22D19/02 , B22F3/003 , B22F3/16 , B22F3/20 , B22F7/06 , B22F2003/206 , B22F2003/208 , B30B11/007 , B30B11/26 , C22C47/14 , C22C49/02 , C22C49/04 , H01B1/02 , H01B1/026 , H01L39/24 , Y10T29/49014
摘要： When forming ultra-conductive wire, multi-walled carbon nanotubes (MWCNTs) are dispersed and de-agglomerated in hot metal. The MWCNTs are dispersed in a precursor matrix via mixing and sintering to form precursor material, which is hot-extruded multiple rounds at a predetermined temperature to form a nano-composite material. The nano-composite material is inserted into a metal bar to form a nano-composite billet (306), which is subjected to multiple rounds of hot extrusion to form an ultra-conductive material. The ultra-conductive material is subjected to one or more rounds of hot wire drawing to form an ultra-conductive wire comprising a nano-composite filament.
摘要翻译： 当形成超导线时，多壁碳纳米管（MWCNT）在铁水中分散和去结块。 通过混合和烧结将MWCNT分散在前体基质中以形成前体材料，其在预定温度下热挤压多个回合以形成纳米复合材料。 将纳米复合材料插入金属棒中以形成纳米复合坯料（306），其经受多轮热挤压以形成超导材料。 对超导材料进行一轮或多轮热拉丝以形成包含纳米复合丝的超导线。
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