公开(公告)号：US09601440B2

公开(公告)日：2017-03-21

申请号：US14219661

申请日：2014-03-19

申请人： FUJI ELECTRIC CO., LTD.

发明人： Takeyoshi Nishimura

IPC分类号： G03F1/38 ,  H01L23/00 ,  H01L21/78 ,  H01L23/31

CPC分类号： H01L23/562 ,  G03F1/00 ,  G03F1/38 ,  G03F1/50 ,  H01L21/78 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device is disclosed in which the probability of occurrence of a crack is reduced and in which manufacturing cost is also reduced. An exposure mask used in the method is disclosed. Protrusion portions are formed in intersections of scribe lines in an outermost periphery of a scribe line pattern of a surface protection film of the exposure mask, to thereby stick out toward an outer circumference. In this manner, the probability of occurrence of a crack occurring in a device formation section can be reduced so that a reduction in the manufacturing cost can be achieved.

公开(公告)号：US09557649B2

公开(公告)日：2017-01-31

申请号：US15069244

申请日：2016-03-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tao-Min Huang ,  Chia-Jen Chen ,  Hsin-Chang Lee ,  Chih-Tsung Shih ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

IPC分类号： G03F7/20 ,  G03F1/24 ,  G03F1/36 ,  G03F1/38

CPC分类号： G03F7/2004 ,  G03F1/24 ,  G03F1/36 ,  G03F1/38 ,  G03F7/20 ,  G03F7/7055

摘要： A photolithographic technique includes receiving a mask having a printing feature region, a sub-resolution assist feature (SRAF) region, and a third region. Each region has a different thickness of an absorptive layer disposed therein. The technique also includes exposing the mask to radiation, such that an intensity of radiation reflected by the SRAF region is substantially between an intensity of radiation reflected by the printing feature region and an intensity of radiation reflected by the third region. Using the radiation reflected by the printing feature region, the radiation reflected by the SRAF region, and the radiation reflected by the third region a workpiece is exposed.

摘要翻译： 光刻技术包括接收具有打印特征区域，子分辨率辅助特征（SRAF）区域和第三区域的掩模。 每个区域具有设置在其中的吸收层的不同厚度。 该技术还包括将掩模暴露于辐射，使得由SRAF区域反射的辐射强度基本上在由打印特征区域反射的辐射强度和由第三区域反射的辐射强度之间。 使用由打印特征区域反射的辐射，由SRAF区域反射的辐射以及由第三区域反射的工件被曝光。

公开(公告)号：US20170023855A1

公开(公告)日：2017-01-26

申请号：US15284098

申请日：2016-10-03

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Yukio INAZUKI ,  Takashi YOSHII ,  Toyohisa SAKURADA ,  Akira IKEDA ,  Hideo KANEKO ,  Satoshi WATANABE ,  Yoshio KAWAI

IPC分类号： G03F1/26

CPC分类号： G03F1/26 ,  G03F1/0046 ,  G03F1/0076 ,  G03F1/32 ,  G03F1/38 ,  G03F1/50

摘要： A method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate includes forming the silicon-containing inorganic film such that a surface has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent, the silicon-containing inorganic film being an SiO film or an SiON film and serving as a hard mask film.

摘要翻译： 制造在透明基板上具有至少含硅无机膜的光掩模坯料的方法包括：形成含硅无机膜，使得表面的氧浓度不低于55原子％且不大于75原子％ 该含硅无机膜是SiO膜或SiON膜，用作硬掩模膜。

公开(公告)号：US20160379884A1

公开(公告)日：2016-12-29

申请号：US14751035

申请日：2015-06-25

申请人： Infineon Technologies AG

发明人： Joerg Ortner ,  Michael Roesner ,  Gudrun Stranzl ,  Rudolf Rothmaler

IPC分类号： H01L21/78 ,  H01L21/308 ,  G03F1/38 ,  H01L21/3065

CPC分类号： H01L21/78 ,  G03F1/38 ,  H01L21/3065 ,  H01L21/3083

摘要： A method of dicing a wafer includes providing a wafer and etching the wafer to singulate die between kerf line segments defined within an interior region of the wafer and to singulate a plurality of wafer edge areas between the kerf line segments and a circumferential edge of the wafer. Each one of the plurality of wafer edge areas is singulated by kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer.

摘要翻译： 切割晶片的方法包括提供晶片并蚀刻晶片以在限定在晶片的内部区域内的切口线段之间划分管芯并且在切口线段与晶片的周边边缘之间划分多个晶片边缘区域 。 多个晶片边缘区域中的每一个由切割线分割，每条切割线各自在切割线段之一的两个端点之一和晶片的周边边缘之间延伸。

公开(公告)号：US20160363855A1

公开(公告)日：2016-12-15

申请号：US15246397

申请日：2016-08-24

申请人： SK hynix Inc.

发明人： Tae Joong HA

IPC分类号： G03F1/52 ,  G03F1/50 ,  G03F1/26

CPC分类号： G03F1/52 ,  G03F1/26 ,  G03F1/38 ,  G03F1/50

摘要： A photomask blank and/or photomask includes a light transmitting substrate, a highly reflective material layer disposed on the light transmitting substrate, and a transfer pattern layer disposed on the highly reflective material layer. The highly reflective material layer reflects light to be transmitted through the light transmitting substrate, with a predetermined reflectivity.

公开(公告)号：US09520299B2

公开(公告)日：2016-12-13

申请号：US14981881

申请日：2015-12-28

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Wanbing Yi ,  Chin Chuan Neo ,  Hai Cong ,  Kin Wai Tang ,  Weining Li ,  Juan Boon Tan

IPC分类号： H01L21/308 ,  H01L21/027 ,  G03F1/00 ,  G03F1/36 ,  H01L21/033

CPC分类号： H01L21/3088 ,  G03F1/00 ,  G03F1/144 ,  G03F1/36 ,  G03F1/38 ,  G03F1/80 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3081

摘要： A semiconductor device and method for forming a semiconductor device are presented. The method includes providing a patterned reticle having a pattern perimeter defined by active and dummy patterns. The dummy patterns include dummy structures modified according to a density equation. The patterned reticle is used to pattern a resist layer on a substrate with a device layer. An etch is performed to pattern the device layer using the patterned resist layer. Additional processing is performed to complete formation of the device.

摘要翻译： 本发明提供一种用于形成半导体器件的半导体器件和方法。 该方法包括提供具有由有源和虚拟图案限定的图案周长的图案化掩模版。 虚拟图案包括根据密度方程修改的虚拟结构。 图案化的掩模版用于在具有器件层的衬底上图案化抗蚀剂层。 执行蚀刻以使用图案化的抗蚀剂层对器件层进行图案化。 执行附加处理以完成设备的形成。

公开(公告)号：US20160330852A1

公开(公告)日：2016-11-10

申请号：US15217605

申请日：2016-07-22

申请人： Apple Inc.

发明人： Lucy Elizabeth BROWNING ,  Charles B. WOODHULL ,  Bryan Patrick KIPLE ,  David A. PAKULA ,  Tang Yew TAN ,  Julie HANCHAK-CONNORS ,  John Murray THORNTON, III ,  Thomas JOHANNESSEN ,  Peter RUSSELL-CLARKE ,  Masashige TATEBE ,  Napthaneal Y. TAN

IPC分类号： H05K5/02 ,  C25D11/12 ,  C25D11/02 ,  H05K5/04

CPC分类号： H05K5/04 ,  B23C5/00 ,  B23C5/1081 ,  B23C2220/04 ,  B23C2220/16 ,  B23C2220/20 ,  B23C2220/28 ,  B23C2220/48 ,  B23C2226/31 ,  B23C2226/315 ,  B23P11/00 ,  B23P17/00 ,  B23P17/02 ,  C25D7/00 ,  C25D11/02 ,  C25D11/022 ,  C25D11/12 ,  C25D11/246 ,  C25D11/34 ,  G03F1/38 ,  H01Q1/243 ,  H01Q1/42 ,  H04M1/0249 ,  H04M1/0254 ,  H04M1/11 ,  H05K5/02 ,  H05K5/0217 ,  H05K5/0243 ,  H05K5/0247 ,  H05K5/03 ,  H05K13/00 ,  Y10T29/47 ,  Y10T29/49002 ,  Y10T29/49826 ,  Y10T156/10 ,  Y10T156/1064 ,  Y10T407/1906 ,  Y10T409/300896 ,  Y10T409/303752 ,  Y10T409/30952

摘要： Methods and structures for forming anodization layers that protect and cosmetically enhance metal surfaces are described. In some embodiments, methods involve forming an anodization layer on an underlying metal that permits an underlying metal surface to be viewable. In some embodiments, methods involve forming a first anodization layer and an adjacent second anodization layer on an angled surface, the interface between the two anodization layers being regular and uniform. Described are photomasking techniques and tools for providing sharply defined corners on anodized and texturized patterns on metal surfaces. Also described are techniques and tools for providing anodizing resistant components in the manufacture of electronic devices.

摘要翻译： 描述了用于形成保护和美容地增强金属表面的阳极氧化层的方法和结构。 在一些实施方案中，方法包括在下面的金属上形成阳极氧化层，其允许下面的金属表面是可见的。 在一些实施例中，方法包括在倾斜表面上形成第一阳极氧化层和相邻的第二阳极氧化层，两个阳极氧化层之间的界面是规则的和均匀的。 描述的是光掩模技术和工具，用于在金属表面上阳极化和纹理化图案上提供锐利定义的角。 还描述了在电子设备的制造中提供耐阳极化部件的技术和工具。

公开(公告)号：US09465286B2

公开(公告)日：2016-10-11

申请号：US14565087

申请日：2014-12-09

申请人： Samsung Electronics Co., Ltd.

发明人： Sang-hyun Kim ,  Seong-sue Kim ,  Dong-gun Lee

IPC分类号： G03F1/24 ,  G03F1/38 ,  G03F1/72 ,  G03F1/74 ,  G03F7/20

CPC分类号： G03F1/24 ,  G03F1/38 ,  G03F1/72 ,  G03F1/74

摘要： Provided are a photomask and a method of correcting errors thereof. The photomask includes a multilayer reflection film covering one side surface of a substrate and an energy receiving layer covering the other side surface of the substrate. The method includes determining a local correction position on a frontside surface of the photomask according to a detected error of the photomask, and locally applying an energy beam to a backside surface region of the photomask aligned with the local correction position in a thickness direction of the photomask. The invention may be applicable to structures other than photomasks that benefit from modification of surface heights or selectively applied stress.

摘要翻译： 提供一种光掩模和一种校正其错误的方法。 光掩模包括覆盖基板的一个侧表面的多层反射膜和覆盖基板的另一侧表面的能量接收层。 该方法包括根据检测到的光掩模的误差来确定光掩模的前表面上的局部校正位置，并且将能量束局部地施加到与沿局部校正位置的厚度方向对齐的光掩模的背面表面区域 光掩模 本发明可以应用于受到表面高度的改变或选择性施加的应力的光掩模以外的结构的影响。

公开(公告)号：US20160291459A1

公开(公告)日：2016-10-06

申请号：US14932673

申请日：2015-11-04

申请人： SK hynix Inc.

发明人： Tae Joong HA

IPC分类号： G03F1/38

CPC分类号： G03F1/38 ,  G03F1/26

摘要： A photomask includes a light transmission substrate, and a transfer pattern disposed over the light transmission substrate, a shape of the transfer pattern being transferred onto a wafer by an exposure process. The transfer pattern comprises a first transfer pattern having a closed loop shape and having a first thickness, and a plurality of second transfer patterns disposed in an opening surrounded by the first transfer pattern, the plurality of second transfer patterns being arrayed in a first direction such that adjacent second transfer patterns are spaced apart from each other by a first distance, the second transfer patterns having a second thickness which is less than the first thickness of the first transfer pattern.

摘要翻译： 光掩模包括透光基板和设置在透光基板上的转印图案，通过曝光工艺将转印图案的形状转印到晶片上。 转印图案包括具有闭环形状并具有第一厚度的第一转印图案和布置在由第一转印图案包围的开口中的多个第二转印图案，多个第二转印图案沿第一方向排列，如第 相邻的第二转印图案彼此间隔开第一距离，第二转印图案具有小于第一转印图案的第一厚度的第二厚度。

公开(公告)号：US09454074B2

公开(公告)日：2016-09-27

申请号：US14307564

申请日：2014-06-18

申请人： Samsung Electronics Co., Ltd.

发明人： Hwan-seok Seo ,  Su-young Lee

IPC分类号： G03F1/24 ,  G03F1/50 ,  G03F1/48

CPC分类号： G03F1/48 ,  G03F1/24 ,  G03F1/38

摘要： Reflective photomask blanks are provided. The reflective photomask blank includes a multi-layered reflection layer on a photomask substrate, a capping layer directly disposed on a top surface of the multi-layered reflection layer to include transition metal and silicon, a passivation layer disposed on a surface of the capping layer opposite to the multi-layered reflection layer, and a light absorption layer on the passivation layer.

摘要翻译： 提供反射式光掩模坯料。 反射式光掩模坯料包括光掩模基板上的多层反射层，直接设置在多层反射层的顶表面上以包括过渡金属和硅的封盖层，设置在封盖层的表面上的钝化层 与多层反射层相对，以及钝化层上的光吸收层。