公开(公告)号：US09704748B2

公开(公告)日：2017-07-11

申请号：US14751035

申请日：2015-06-25

申请人： Infineon Technologies AG

发明人： Joerg Ortner ,  Michael Roesner ,  Gudrun Stranzl ,  Rudolf Rothmaler

IPC分类号： H01L21/78 ,  H01L21/308 ,  H01L21/3065 ,  G03F1/38

CPC分类号： H01L21/78 ,  G03F1/38 ,  H01L21/3065 ,  H01L21/3083

摘要： A method of dicing a wafer includes providing a wafer and etching the wafer to singulate die between kerf line segments defined within an interior region of the wafer and to singulate a plurality of wafer edge areas between the kerf line segments and a circumferential edge of the wafer. Each one of the plurality of wafer edge areas is singulated by kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer.

公开(公告)号：US20160379884A1

公开(公告)日：2016-12-29

申请号：US14751035

申请日：2015-06-25

申请人： Infineon Technologies AG

发明人： Joerg Ortner ,  Michael Roesner ,  Gudrun Stranzl ,  Rudolf Rothmaler

IPC分类号： H01L21/78 ,  H01L21/308 ,  G03F1/38 ,  H01L21/3065

CPC分类号： H01L21/78 ,  G03F1/38 ,  H01L21/3065 ,  H01L21/3083

摘要： A method of dicing a wafer includes providing a wafer and etching the wafer to singulate die between kerf line segments defined within an interior region of the wafer and to singulate a plurality of wafer edge areas between the kerf line segments and a circumferential edge of the wafer. Each one of the plurality of wafer edge areas is singulated by kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer.

摘要翻译： 切割晶片的方法包括提供晶片并蚀刻晶片以在限定在晶片的内部区域内的切口线段之间划分管芯并且在切口线段与晶片的周边边缘之间划分多个晶片边缘区域 。 多个晶片边缘区域中的每一个由切割线分割，每条切割线各自在切割线段之一的两个端点之一和晶片的周边边缘之间延伸。