公开(公告)号：US20110140107A1

公开(公告)日：2011-06-16

申请号：US12923599

申请日：2010-09-29

Applicant: Jin-Hee Kang ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Yul-Kyu Lee

Inventor： Jin-Hee Kang ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Yul-Kyu Lee

IPC: H01L33/18 ,  H01L21/336

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3248 ,  H01L27/326 ,  H01L29/4908

Abstract: A flat panel display device including a substrate including first and second regions; an active layer on the first region of the substrate including a semiconductor material; a lower electrode on the second region of the substrate including the semiconductor material; a first insulating layer on the substrate including the active layer and the lower electrode thereon; a gate electrode on the first insulating layer overlying the active layer and including a first conductive layer pattern and a second conductive layer pattern; an upper electrode on the first insulating layer overlying the lower electrode and including the first conductive layer pattern and the second conductive layer pattern; a second insulating layer on the gate electrode and the upper electrode exposing portions of the active layer and portions of the upper electrode; and a source electrode and a drain electrode connected to the exposed portions of the active layer.

Abstract translation: 一种平板显示装置，包括：包括第一和第二区域的基板; 在包括半导体材料的衬底的第一区域上的有源层; 在包括半导体材料的基板的第二区域上的下电极; 在其上的包括有源层和下电极的基板上的第一绝缘层; 覆盖有源层的第一绝缘层上的栅电极，包括第一导电层图案和第二导电层图案; 所述第一绝缘层上的上电极覆盖所述下电极并且包括所述第一导电层图案和所述第二导电层图案; 栅电极上的第二绝缘层和暴露有源层的部分和上电极的部分的上电极; 以及连接到有源层的暴露部分的源电极和漏电极。

公开(公告)号：US20110128490A1

公开(公告)日：2011-06-02

申请号：US12957246

申请日：2010-11-30

Applicant: Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Yul-Kyu Lee ,  Jin-Hee Kang

Inventor： Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Yul-Kyu Lee ,  Jin-Hee Kang

IPC: G02F1/1333 ,  H01L33/08 ,  H01L33/16

CPC classification number: H01L51/5262 ,  G02F1/1368 ,  H01L27/3258

Abstract: A flat panel display device and a method of manufacturing the flat panel display device are disclosed. In one embodiment, the flat panel display device includes: i) a first substrate, ii) an active layer formed over the first substrate, wherein the active layer comprises a source region, a drain region, and a channel region, iii) a gate insulating layer formed on the active layer, iv) a gate electrode formed on the gate insulating layer and over the channel region of the active layer and v) a first interlayer insulating film formed on the gate insulating layer and the gate electrode. The device may further includes 1) a source electrode and a drain electrode electrically connected to the source region and the drain region of the active layer, respectively, through a contact hole, wherein the contact hole is formed in the first interlayer insulating film and the gate insulating layer, 2) a second interlayer insulating film interposed substantially only between i) the first interlayer insulating film and ii) the source electrode and the drain electrode, 3) a passivation layer formed on the first interlayer insulating film and the source electrode and the drain electrode and 4) a pixel electrode electrically connected to the source electrode or the drain electrode through a via-hole formed in the passivation layer.

Abstract translation: 公开了一种平板显示装置及其制造方法。 在一个实施例中，平板显示装置包括：i）第一衬底，ii）形成在第一衬底上的有源层，其中有源层包括源极区，漏极区和沟道区，iii）栅极 形成在有源层上的绝缘层，iv）形成在栅极绝缘层上并在有源层的沟道区上方的栅极，以及v）形成在栅极绝缘层和栅电极上的第一层间绝缘膜。 该器件还可以包括：1）源电极和漏极，分别通过接触孔与有源层的源极区域和漏极区域电连接，其中接触孔形成在第一层间绝缘膜和 栅绝缘层，2）基本上仅介于i）第一层间绝缘膜和ii）源电极和漏电极之间的第二层间绝缘膜，3）形成在第一层间绝缘膜和源电极上的钝化层，以及 漏极电极和4）通过形成在钝化层中的通孔电连接到源电极或漏电极的像素电极。

公开(公告)号：US20110114956A1

公开(公告)日：2011-05-19

申请号：US12943886

申请日：2010-11-10

Applicant: Sun Park ,  Chun-Gi You ,  Jong-Hyun Park ,  Jin-Hee Kang ,  Yul-Kyu Lee

Inventor： Sun Park ,  Chun-Gi You ,  Jong-Hyun Park ,  Jin-Hee Kang ,  Yul-Kyu Lee

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5215 ,  H01L27/3248

Abstract: An organic light emitting display apparatus and a method of manufacturing the organic light emitting display apparatus, whereby the manufacturing process is simplified and the electric characteristics of the organic light emitting display apparatus are improved. The organic light emitting display apparatus includes: a gate electrode that includes a first conductive layer including ITO, a second conductive layer on the first conductive layer, a third conductive layer on the second conductive layer and including ITO, and a fourth conductive layer on the third conductive layer and including IZO or AZO; and a pixel electrode formed in the same layer level as the gate electrode and including a first electrode layer that includes ITO, a second electrode layer on the first electrode layer, a third electrode layer on the second electrode layer and including ITO, and a fourth electrode layer on the third electrode layer and including IZO or AZO.

Abstract translation: 一种有机发光显示装置和制造有机发光显示装置的方法，由此简化了制造工艺，并提高了有机发光显示装置的电特性。 有机发光显示装置包括：栅电极，其包括第一导电层，包括ITO，第一导电层上的第二导电层，第二导电层上的第三导电层，包括ITO;以及第四导电层， 第三导电层并且包括IZO或AZO; 和形成为与栅极电极相同的层级的像素电极，并且包括包括ITO的第一电极层，在第一电极层上的第二电极层，在第二电极层上的包括ITO的第三电极层，以及第四电极层 电极层，并且包括IZO或AZO。

公开(公告)号：US20110108848A1

公开(公告)日：2011-05-12

申请号：US12904672

申请日：2010-10-14

Applicant: Yul-Kyu Lee ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Jin-Hee Kang

Inventor： Yul-Kyu Lee ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Jin-Hee Kang

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3262 ,  H01L27/3258

Abstract: An organic light emitting display having an active layer of a thin film transistor formed on a substrate, a first conductive layer formed at an edge of the active layer, a first insulation layer formed on the substrate and the first conductive layer, a second conductive layer corresponding to a central area of the active layer formed on the first insulation layer, a fanout lower electrode separated a predetermined distance from the second conductive layer, a pixel electrode, a third conductive layer formed on the second conductive layer, a fanout upper electrode formed on the fanout lower electrode, a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode, and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer.

Abstract translation: 一种有机发光显示器，其具有形成在基板上的薄膜晶体管的有源层，形成在所述有源层的边缘的第一导电层，形成在所述基板上的第一绝缘层和所述第一导电层，第二导电层 对应于形成在第一绝缘层上的有源层的中心区域，与第二导电层分隔预定距离的扇出下电极，像素电极，形成在第二导电层上的第三导电层，形成的扇出上电极 在扇出的下电极上，形成在第三导电层，扇出上电极和像素电极上的第二绝缘层，以及与第二绝缘层形成的源电极和漏极接触的源极和漏极。

公开(公告)号：US20100013383A1

公开(公告)日：2010-01-21

申请号：US12468597

申请日：2009-05-19

Applicant: Soo-Hyun Kim ,  Sun Park ,  Chun-Gi You ,  Jong-Hyun Park ,  Dong-Ki Lee ,  Yul-Kyu Lee

Inventor： Soo-Hyun Kim ,  Sun Park ,  Chun-Gi You ,  Jong-Hyun Park ,  Dong-Ki Lee ,  Yul-Kyu Lee

IPC: H01J1/62 ,  H01J9/00 ,  G06F3/038

CPC classification number: H01L51/5265 ,  H01L27/322 ,  H01L27/3246 ,  H01L51/5212 ,  H01L51/5215 ,  H01L51/5253 ,  H01L2251/308

Abstract: The present invention relates to an organic light emitting device and a manufacturing method thereof. A method of manufacturing an organic light emitting device according to an exemplary embodiment of the present invention includes: respectively forming first, second, and third driving transistors in a first region, a second region, and a third region on a substrate; forming an insulating layer on the first to third driving transistors; respectively forming first, second, and third pixel electrodes on the insulating layer, the first, second, and third pixel electrodes being formed in the first, second, and third regions, respectively; forming an auxiliary electrode on a side surface of each of the first, second, and third pixel electrodes; forming an organic light emitting member on the first to third pixel electrodes; and forming a common electrode on the organic light emitting member.

Abstract translation: 本发明涉及一种有机发光器件及其制造方法。 根据本发明的示例性实施例的制造有机发光器件的方法包括：在衬底上的第一区域，第二区域和第三区域中分别形成第一，第二和第三驱动晶体管; 在第一至第三驱动晶体管上形成绝缘层; 分别在所述绝缘层上形成第一，第二和第三像素电极，所述第一，第二和第三像素电极分别形成在所述第一，第二和第三区域中; 在所述第一，第二和第三像素电极中的每一个的侧表面上形成辅助电极; 在所述第一至第三像素电极上形成有机发光部件; 以及在有机发光部件上形成公共电极。

公开(公告)号：US08785910B2

公开(公告)日：2014-07-22

申请号：US12926665

申请日：2010-12-02

Applicant: Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Jin-Hee Kang ,  Yul-Kyu Lee

Inventor： Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Jin-Hee Kang ,  Yul-Kyu Lee

IPC: H01L29/04 ,  H01L29/10 ,  H01L21/84 ,  H01L21/00 ,  H01L31/00

CPC classification number: H01L29/42384 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/78678

Abstract: A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å.

Abstract translation: 薄膜晶体管，包括该薄膜晶体管的显示装置和制造该显示装置的方法，该薄膜晶体管包括一基板; 基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的半导体层; 以及与半导体层电连接的源极/漏极，其中栅电极具有大约至大约的厚度，并且栅极绝缘层具有大约至大约的厚度。

公开(公告)号：US08669127B2

公开(公告)日：2014-03-11

申请号：US13860339

申请日：2013-04-10

Applicant: Yul-Kyu Lee ,  Sun Park ,  Chun-Gi You ,  Jong-Hyun Park

Inventor： Yul-Kyu Lee ,  Sun Park ,  Chun-Gi You ,  Jong-Hyun Park

IPC: H01L21/00

CPC classification number: H01L51/56 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265

Abstract: Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate on the gate insulating layer; forming a first doping region by injecting an impurity to a part that is not covered by the capacitor intermediate in the first storage plate; forming an interlayer insulating layer having a capacitor opening exposing the capacitor intermediate, and a plurality of erosion preventing layers on an edge of the capacitor intermediate toward the first doping region in the capacitor opening; removing the capacitor intermediate including the erosion preventing layer and a lower region of the erosion preventing layer, and injecting an impurity in the first storage plate through the second storage plate to form a second doping region contacting the first doping region.

Abstract translation: 制造OLED显示器包括在基板上形成覆盖第一存储板的第一存储板和栅极绝缘层; 依次形成覆盖所述第一存储板的第二存储板和在所述栅极绝缘层上的中间的电容器; 通过向第一存储板中未被电容器中间体覆盖的部分注入杂质而形成第一掺杂区; 形成具有使所述电容器中间露出的电容器开口的层间绝缘层，以及在所述电容器开口中的朝向所述第一掺杂区域的电容器的边缘上的多个防蚀蚀层; 去除包括侵蚀防止层的电容器中间件和侵蚀防止层的下部区域，以及通过第二存储板在第一存储板中注入杂质以形成与第一掺杂区域接触的第二掺杂区域。

公开(公告)号：US08535995B2

公开(公告)日：2013-09-17

申请号：US13183134

申请日：2011-07-14

Applicant: Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Yul-Kyu Lee ,  Sang-Ho Moon

Inventor： Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Yul-Kyu Lee ,  Sang-Ho Moon

IPC: H01L21/00 ,  H01L21/84 ,  H01L23/52

CPC classification number: H01L27/1288 ,  H01L29/66757 ,  H01L51/5215 ,  H01L2227/323

Abstract: A method of manufacturing an organic light-emitting display device includes forming a silicon layer and a gate insulating film over a substrate having a transistor region and a capacitor region; forming a halftone photoresist over the substrate; patterning the silicon layer and the gate insulating film; forming a residual photoresist by subjecting the halftone photoresist to an ashing process to leave part of the halftone photoresist over the transistor region; and doping at least a portion of the silicon layer with impurities by applying the impurities over an entire region of the substrate.

Abstract translation: 制造有机发光显示装置的方法包括在具有晶体管区域和电容器区域的基板上形成硅层和栅极绝缘膜; 在衬底上形成半色调光致抗蚀剂; 图案化硅层和栅极绝缘膜; 通过使所述半色调光致抗蚀剂经历灰化处理以在所述晶体管区域上留下所述半色调光刻胶的一部分来形成残余光致抗蚀剂; 以及通过在衬底的整个区域上施加杂质来掺杂杂质的硅层的至少一部分。

公开(公告)号：US08405084B2

公开(公告)日：2013-03-26

申请号：US12926377

申请日：2010-11-15

Applicant: Yul-Kyu Lee ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Jin-Hee Kang

Inventor： Yul-Kyu Lee ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Jin-Hee Kang

IPC: H01L29/04

CPC classification number: H01L27/3248 ,  H01L27/3262

Abstract: An organic light emitting diode display includes a substrate main body, a polysilicon semiconductor layer on the substrate main body, a gate insulating layer covering the semiconductor layer, and a gate electrode and a pixel electrode on the gate insulating layer, the gate electrode and the pixel electrode each including a transparent conductive layer portion with a gate metal layer portion on the transparent conductive layer portion, and the pixel electrode including a light emitting area having the transparent conductive layer portion and a non-light emitting area having both the transparent conductive layer portion and the gate metal layer portion.

Abstract translation: 有机发光二极管显示器包括基板主体，在基板主体上的多晶硅半导体层，覆盖半导体层的栅极绝缘层，栅极绝缘层上的栅电极和像素电极，栅电极和 每个像素电极包括在透明导电层部分上具有栅极金属层部分的透明导电层部分，并且所述像素电极包括具有透明导电层部分的发光区域和具有透明导电层的非发光区域 部分和栅极金属层部分。

公开(公告)号：US08288216B2

公开(公告)日：2012-10-16

申请号：US12753732

申请日：2010-04-02

Applicant: Jin-Hee Kang ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Yul-Kyu Lee

Inventor： Jin-Hee Kang ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Yul-Kyu Lee

IPC: H01L21/00

CPC classification number: H01L29/78609 ,  H01L29/78618

Abstract: A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.

Abstract translation: 公开了一种薄膜晶体管（TFT）及其制造方法。 TFT包括衬底，设置在衬底上的栅电极，设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上方并包括多晶硅（poly-Si）层的半导体层，设置的欧姆接触层 超过半导体层的预定区域，设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层，以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。 阻挡层介于半导体层和欧姆接触层之间。 因此，当控制底栅型TFT的截止电流时，可以通过简单的处理来防止由漏电流引起的特性的劣化。