公开(公告)号：US20240234557A1

公开(公告)日：2024-07-11

申请号：US18515102

申请日：2023-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Jeeeun YANG ,  Sangwook KIM ,  Kyung-Eun BYUN ,  Eunkyu LEE

IPC: H01L29/76 ,  H01L21/02 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7606 ,  H01L21/02568 ,  H01L29/24 ,  H01L29/4236 ,  H01L29/66969

Abstract: Disclosed are a semiconductor device, a method of manufacturing the same, and an electronic element and an electronic apparatus each including the semiconductor device. The semiconductor device may include a substrate, a channel layer on the substrate, a first electrode and a second electrode on two opposite ends of the channel layer, respectively, and spaced apart from each other, a gate electrode on the channel layer and spaced apart from the first electrode and the second electrode, a gate dielectric material provided between the channel layer and the gate electrode, and a chalcogen compound layer being at least one of between the gate dielectric material and the channel layer, between the first electrode and the channel layer, and between the second electrode and the channel layer.

公开(公告)号：US20240170562A1

公开(公告)日：2024-05-23

申请号：US18366366

申请日：2023-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung KWON ,  Minsu SEOL ,  Kyung-Eun BYUN ,  Changseok LEE ,  Minseok YOO

IPC: H01L29/76 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7606 ,  H01L29/24 ,  H01L29/66969

Abstract: A semiconductor device may include a first two-dimensional (2D) material layer, a second 2D material layer, a first electrode, a second electrode, a third electrode, a first gate electrode. and a second gate electrode. A Fermi-level may be pinned on an interfacial surface between the first 2D material layer and the first electrode. The Fermi-level may be depinned on an interfacial surface between the second 2D material layer and the first electrode.

公开(公告)号：US20240113211A1

公开(公告)日：2024-04-04

申请号：US18475803

申请日：2023-09-27

Applicant: Samsung Electronics Co., Ltd. ,  President and Fellows Of Harvard College

Inventor： Yeonchoo CHO ,  Elise BRUTSCHEA ,  Philip KIM ,  Hongkun PARK ,  Minsu SEOL

IPC: H01L29/76 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7606 ,  H01L21/02568 ,  H01L29/24 ,  H01L29/66969

Abstract: A semiconductor device may include a two-dimensional (2D) material having a semiconductor characteristic, a conductive layer on a first surface of the 2D material layer, and an alignment adjusting layer on a second surface of the 2D material layer. The second surface may be different from the first surface. The alignment adjusting layer may adjust an energy-band alignment between the 2D material layer and the conductive layer.

公开(公告)号：US20230112883A1

公开(公告)日：2023-04-13

申请号：US17690376

申请日：2022-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Keunwook SHIN ,  Junyoung KWON ,  Minseok YOO ,  Changseok LEE

IPC: H01L29/76 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: Provided are a two-dimensional material structure, a semiconductor device including the two-dimensional material structure, and a method of manufacturing the semiconductor device. The two-dimensional material structure may include a first insulator including a first dielectric material; a second insulator on the first insulator and including a second dielectric material; a first two-dimensional material film on an exposed surface of the first insulator; and a second two-dimensional material film provided on an exposed surface of the second insulator. The first and second two-dimensional material films may include a two-dimensional material having a two-dimensional layered structure, and the second two-dimensional material film may include more layers of the two-dimensional material than the first two-dimensional material film.

公开(公告)号：US20230061267A1

公开(公告)日：2023-03-02

申请号：US17673239

申请日：2022-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung KWON ,  Minsu SEOL ,  Hyeonjin SHIN ,  Minseok YOO

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L29/40

Abstract: An electronic device including a two-dimensional material is provided. The electronic device may include a substrate; a metal layer on a partial region of the substrate; a two-dimensional material layer over the metal layer and an upper surface of the substrate; and an insertion layer between the metal layer and the two-dimensional material layer.

公开(公告)号：US20220406911A1

公开(公告)日：2022-12-22

申请号：US17545373

申请日：2021-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minseok YOO ,  Minsu SEOL ,  Junyoung KWON ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Van Luan NGUYEN

IPC: H01L29/423 ,  H01L29/43

Abstract: Disclosed are an electronic device including a two-dimensional material, and a method of fabricating the electronic device. The electronic device may include a first metal layer including a transition metal, a second metal layer on the first metal layer and including gold (Au), and a two-dimensional material layer between the first metal layer and the second metal layer. The two-dimensional material layer may include a transition metal dichalcogenide (TMD). The two-dimensional material layer may be formed as a chalcogen element diffuses into the second metal layer and reacts with the transition metal of the first metal layer adjacent to the second metal layer.

公开(公告)号：US20220254643A1

公开(公告)日：2022-08-11

申请号：US17547626

申请日：2021-12-10

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Kyung-Eun BYUN ,  Sangwoo KIM ,  Minsu SEOL ,  Hyeonjin SHIN ,  Minseok SHIN ,  Pin ZHAO ,  Taehyeong KIM ,  Jaehwan JUNG

IPC: H01L21/308 ,  H01J37/34

Abstract: A method of forming a material film includes providing a non-photosensitive mask on a substrate to expose a partial region of the substrate, forming a material film on the partial region of the substrate using a sputtering process, removing the non-photosensitive mask, and heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere. The material film includes a transition metal and a chalcogen element. The sputtering process may include an RF magnetron sputtering process. The heat treatment may be performed at a higher temperature than a temperature of the forming the material film.

公开(公告)号：US20220157947A1

公开(公告)日：2022-05-19

申请号：US17398515

申请日：2021-08-10

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Minsu SEOL ,  Hyeonsuk SHIN ,  Hyeonjin SHIN ,  Hyuntae HWANG ,  Changseok LEE ,  Seongin YOON

IPC: H01L29/267 ,  H01L29/76 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24 ,  H01L21/02

Abstract: Provided are a black phosphorus-two dimensional material complex and a method of manufacturing the black phosphorus-two dimensional material complex. The black phosphorus-two dimensional material complex includes: first and second two-dimensional material layers, which each have a two-dimensional crystal structure and are coupled to each other by van der Waals force; and a black phosphorus sheet which between the first and second two-dimensional material layers and having a two-dimensional crystal structure in which a plurality of phosphorus atoms are covalently bonded.

公开(公告)号：US20210305378A1

公开(公告)日：2021-09-30

申请号：US17014127

申请日：2020-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Hyeonjin SHIN ,  Minseok YOO ,  Minhyun LEE

IPC: H01L29/41 ,  H01L29/417 ,  H01L29/24 ,  H01L29/06 ,  H01L29/45 ,  H01L29/786 ,  H01L29/66

Abstract: Provided are two-dimensional material (2D)-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices. A 2D material-based field effect transistor includes a substrate; first to third 2D material layers on the substrate; an insulating layer on the first 2D material layer; a source electrode on the second 2D material layer; a drain electrode on the third 2D material layer; and a gate electrode on the insulating layer. The first 2D material layer is configured to exhibit semiconductor characteristics, and the second and third 2D material layers are metallic 2D material layers. The first 2D material layer may include a first channel layer of a 2D material and a second channel layer of a 2D material. The first 2D material layer may partially overlap the second and third 2D material layers.

公开(公告)号：US20210300845A1

公开(公告)日：2021-09-30

申请号：US17211174

申请日：2021-03-24

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Sangwon KIM ,  Changsik SONG ,  Juhyen LEE ,  Hyejin CHO ,  Hyeonjin SHIN ,  Minsu SEOL ,  Dongwook LEE

IPC: C07C15/38 ,  H01L51/00

Abstract: Provided are a functionalized polycyclic aromatic hydrocarbon compound and a light-emitting device including the same. The functionalized polycyclic aromatic hydrocarbon compound is structurally stable, and exhibits high light-emission characteristics since aggregation caused by π-π stacking is inhibited, and thus may have high efficiency and long lifespan characteristics.