公开(公告)号：US20080138662A1

公开(公告)日：2008-06-12

申请号：US11567908

申请日：2006-12-07

申请人： Andreas Klaus Berger ,  Qing Dai ,  Hoa Van Do ,  Yoshihiro Ikeda ,  David Thomas Margulies ,  Natacha F. Supper ,  Kentaro Takano ,  Min Xiao

发明人： Andreas Klaus Berger ,  Qing Dai ,  Hoa Van Do ,  Yoshihiro Ikeda ,  David Thomas Margulies ,  Natacha F. Supper ,  Kentaro Takano ,  Min Xiao

IPC分类号： G11B5/706

CPC分类号： G11B5/66 ,  G11B5/65

摘要： A perpendicular magnetic recording medium has a multilayer recording layer (RL) structure that includes a ferromagnetic intergranular exchange enhancement layer for mediating intergranular exchange coupling in the other ferromagnetic layers in the RL structure. The RL structure may be a multilayer of a first ferromagnetic layer (MAG1) of granular polycrystalline Co alloy with Ta-oxide, a second ferromagnetic layer (MAG2) of granular polycrystalline Co alloy with Si-oxide, and an oxide-free CoCr capping layer on top of and in contact with MAG2 for mediating intergranular exchange coupling in MAG1 and MAG2. The RL structure may also be a multilayer of an intergranular exchange enhancement interlayer (IL) in between two ferromagnetic layers, MAG1 and MAG2, each with reduced or no intergranular exchange coupling. Because the IL is in direct contact with both MAG1 and MAG2, it directly mediates intergranular exchange coupling in each of MAG1 and MAG2.

摘要翻译： 垂直磁记录介质具有多层记录层（RL）结构，其包括用于介导RL结构中的其它铁磁层中的晶间交换耦合的铁磁晶间交换增强层。 RL结构可以是具有Ta氧化物的粒状多晶Co合金的第一铁磁层（MAG1），具有Si氧化物的粒状多晶Co合金的第二铁磁层（MAG 2）和不含无氧化物的CoCr的多层 在MAG1和MAG2之间介导晶间交换耦合的MAG 2顶部并与MAG 2接触的封盖层.RR结构还可以是两个铁磁层之间的晶间交换增强中间层（IL）的多层，MAG 1和MAG 2，每个都有减少或没有晶间交换耦合。 因为IL与MAG 1和MAG 2直接接触，所以它直接介导MAG1和MAG2中的每一个中的晶间交换耦合。

公开(公告)号：US20080096053A1

公开(公告)日：2008-04-24

申请号：US11584992

申请日：2006-10-23

申请人： Xiaoping Bian ,  Qing Dai ,  Hoa Do ,  Yoshihiro Ikeda ,  David Margulies ,  Mary Frances Minardi ,  Natacha Frederique Supper ,  Kentaro Takano ,  Min Xiao ,  Qi-Fan Xiao

发明人： Xiaoping Bian ,  Qing Dai ,  Hoa Do ,  Yoshihiro Ikeda ,  David Margulies ,  Mary Frances Minardi ,  Natacha Frederique Supper ,  Kentaro Takano ,  Min Xiao ,  Qi-Fan Xiao

IPC分类号： G11B5/66

CPC分类号： G11B5/667 ,  G11B5/65 ,  G11B5/66 ,  G11B5/7325

摘要： An improved structure for the construction of perpendicular recording media is disclosed. The structure includes a perpendicular recording layer with at least two oxide sublayers or a lower sublayer of a non-oxide. One structure includes an upper sublayer comprised of a Silicon-oxide, while a lower sublayer is comprised of a Tantalum-oxide. The structures provide for increased coercivity and corrosion resistance.

摘要翻译： 公开了用于构建垂直记录介质的改进的结构。 该结构包括具有至少两个氧化物层的垂直记录层或非氧化物的下层。 一个结构包括由氧化硅构成的上层，而下层由钽氧化物构成。 该结构提供增强的矫顽力和耐腐蚀性。

公开(公告)号：US20070054153A1

公开(公告)日：2007-03-08

申请号：US11218702

申请日：2005-09-02

申请人： Qing Dai ,  Hoa Do ,  Min Xiao ,  Bing Yen

发明人： Qing Dai ,  Hoa Do ,  Min Xiao ,  Bing Yen

IPC分类号： G11B5/65

CPC分类号： G11B5/72 ,  G11B5/8408

摘要： A SiON overcoat for use on magnetic media for magnetic recording. The SiON overcoat is deposited by pulsed DC sputtering while applying a negative DC bias. The SiON overcoat is especially useful on perpendicular magnetic recording media because of its ability to deposit thinly and evenly on a rough, granular high coercivity recording media while maintaining excellent corrosion protection properties. A SiON overcoat can be applied less than 3 nm thick while still maintaining excellent mechanical and corrosion protection. The overcoat also has a very high density and water contact angle.

摘要翻译： 用于磁性介质磁记录的SiON外套。 通过脉冲DC溅射沉积SiON外涂层，同时施加负DC偏压。 SiON外涂层在垂直磁记录介质中特别有用，因为它能够在粗糙的颗粒状高矫顽力记录介质上薄薄均匀地沉积，同时保持优异的防腐蚀性能。 SiON外涂层可以施加小于3nm厚，同时仍然保持优异的机械和腐蚀保护。 外套也具有非常高的密度和水接触角。

公开(公告)号：US20050235485A1

公开(公告)日：2005-10-27

申请号：US11168215

申请日：2005-06-27

申请人： Qing Dai ,  Jennifer Lu ,  Dennis McKean ,  Eun Row ,  Li Zheng

发明人： Qing Dai ,  Jennifer Lu ,  Dennis McKean ,  Eun Row ,  Li Zheng

IPC分类号： G11B5/10 ,  G11B5/31 ,  G11B5/60 ,  H04R31/00 ,  G11B5/147

CPC分类号： G11B5/6005 ,  G11B5/3106 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3173 ,  Y10S438/976 ,  Y10T29/49023 ,  Y10T29/49041 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49146 ,  Y10T29/49171 ,  Y10T29/49172 ,  Y10T29/49176 ,  Y10T29/49192 ,  Y10T29/4922 ,  Y10T29/49224 ,  Y10T156/1082 ,  Y10T156/1153

摘要： A method is provided for planarization of structures which minimizes step heights, reduces process steps, improves cleanliness, and provides increased ease of debond. Structures are placed with working surfaces facing down onto an adhesive layer such that structures remain fixed during heating. A bi-layer encapsulating film is used to achieve planarization. A carrier is bi-laminated with a thermoplastic film layer followed by a chemically inert protective polymer film layer that can withstand etch and cleaning processes. The thermoplastic layer is laminated on top of the carrier; the polymer layer is laminated on top of the joined thermoplastic layer and carrier. The carrier with bi-layer film is then placed onto the backside of the structures to resist chemical attack from the front side during photostrip and enable planarization. When heat is applied, the bi-layer encapsulating film melts and pushes the polymer layer into the gaps between structures thereby achieving complete planarization.

公开(公告)号：US08721903B2

公开(公告)日：2014-05-13

申请号：US13439929

申请日：2012-04-05

申请人： Xiaoping Bian ,  Qing Dai ,  Oleksandr Mosendz ,  Franck Dreyfus Rose ,  Run-Han Wang

发明人： Xiaoping Bian ,  Qing Dai ,  Oleksandr Mosendz ,  Franck Dreyfus Rose ,  Run-Han Wang

IPC分类号： B44C1/22

CPC分类号： G11B5/65 ,  G11B5/72 ,  G11B5/8408

摘要： A vacuum planarization method substantially improves the surface roughness of a thermally-assisted recording (TAR) disk that has a recording layer (RL) formed of a substantially chemically-ordered FePt alloy or FePt-X alloy (or CoPt alloy or CoPt-X alloy) and a segregant, like SiO2. A first amorphous carbon overcoat (OC1) is deposited on the RL and etched with a non-chemically reactive plasma to remove at least one-half the thickness of OC1. Then a second amorphous carbon overcoat (OC2) is deposited on the etched OC1. The OC2 is then reactive-ion-etched, for example in a H2/Ar plasma, to remove at least one-half the thickness of OC2. A thin third overcoat (OC3) may be deposited on the etched OC2.

摘要翻译： 真空平面化方法大大提高了具有由基本上化学排列的FePt合金或FePt-X合金（或CoPt合金或CoPt-X合金（或CoPt-X）合金）形成的记录层（RL）的热辅助记录（TAR）盘的表面粗糙度 ）和分离剂，如SiO 2。 第一非晶碳外涂层（OC1）沉积在RL上并用非化学反应性等离子体蚀刻，以除去OC1的至少一半的厚度。 然后在蚀刻的OC1上沉积第二个无定形碳外涂层（OC2）。 然后将OC2反应离子蚀刻，例如在H 2 / Ar等离子体中，以去除OC2的至少一半的厚度。 可以在蚀刻的OC2上沉积薄的第三外涂层（OC3）。

公开(公告)号：US20130264306A1

公开(公告)日：2013-10-10

申请号：US13439929

申请日：2012-04-05

申请人： Xiaoping Bian ,  Qing Dai ,  Oleksandr Mosendz ,  Franck Dreyfus Rose ,  Run-Han Wang

发明人： Xiaoping Bian ,  Qing Dai ,  Oleksandr Mosendz ,  Franck Dreyfus Rose ,  Run-Han Wang

IPC分类号： G11B5/84

CPC分类号： G11B5/65 ,  G11B5/72 ,  G11B5/8408

摘要： A vacuum planarization method substantially improves the surface roughness of a thermally-assisted recording (TAR) disk that has a recording layer (RL) formed of a substantially chemically-ordered FePt alloy or FePt-X alloy (or CoPt alloy or CoPt-X alloy) and a segregant, like SiO2. A first amorphous carbon overcoat (OC1) is deposited on the RL and etched with a non-chemically reactive plasma to remove at least one-half the thickness of OC1. Then a second amorphous carbon overcoat (OC2) is deposited on the etched OC1. The OC2 is then reactive-ion-etched, for example in a H2/Ar plasma, to remove at least one-half the thickness of OC2. A thin third overcoat (OC3) may be deposited on the etched OC2.

摘要翻译： 真空平面化方法大大提高了具有由基本上化学排列的FePt合金或FePt-X合金（或CoPt合金或CoPt-X合金（或CoPt-X）合金）形成的记录层（RL）的热辅助记录（TAR）盘的表面粗糙度 ）和分离剂，如SiO 2。 第一非晶碳外涂层（OC1）沉积在RL上并用非化学反应性等离子体蚀刻，以除去OC1的至少一半的厚度。 然后在蚀刻的OC1上沉积第二个无定形碳外涂层（OC2）。 然后将OC2反应离子蚀刻，例如在H 2 / Ar等离子体中，以去除OC2的至少一半的厚度。 可以在蚀刻的OC2上沉积薄的第三外涂层（OC3）。

公开(公告)号：US20120325771A1

公开(公告)日：2012-12-27

申请号：US13604235

申请日：2012-09-05

申请人： Xiaoping Bian ,  Qing Dai ,  Dan S. Kercher ,  Mark F. Mercado ,  Qi-fan Xiao ,  Jane J. Zhang

发明人： Xiaoping Bian ,  Qing Dai ,  Dan S. Kercher ,  Mark F. Mercado ,  Qi-fan Xiao ,  Jane J. Zhang

IPC分类号： G11B5/84

CPC分类号： G11B5/8408

摘要： A method of fabricating media comprises forming recording media on a substrate. An overcoat is deposited on the recording media opposite the substrate. The overcoat has a first surface finish. The overcoat is etched to remove material and provide the overcoat with a second surface finish that is smoother than the first surface finish. The depositing and etching may occur sequentially in an in-situ, dry vacuum process. The second surface finish may not be mechanically processed after etching to further planarize the overcoat.

摘要翻译： 制造介质的方法包括在基底上形成记录介质。 在与衬底相对的记录介质上沉积外涂层。 外套具有第一表面光洁度。 蚀刻外涂层以除去材料，并为外涂层提供比第一表面光洁度更平滑的第二表面光洁度。 沉积和蚀刻可以在原位干燥的真空过程中顺序地进行。 蚀刻后第二表面光洁度可能不能机械加工，以进一步平整外涂层。

公开(公告)号：US08338006B2

公开(公告)日：2012-12-25

申请号：US12136640

申请日：2008-06-10

申请人： Qing Dai ,  Xing-Cai Guo ,  Dan Saylor Kercher ,  Mike Suk

发明人： Qing Dai ,  Xing-Cai Guo ,  Dan Saylor Kercher ,  Mike Suk

IPC分类号： G11B5/65

CPC分类号： G11B5/855 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/8408

摘要： A method for planarizing a magnetic recording disk that has surface features of elevated lands and recessed grooves includes forming two coatings of cured perfluorinated polyether (PFPE) polymers over the surface features. The disk may have a protective carbon overcoat with a surface that replicates the topography of lands and grooves. A liquid functionalized-PFPE is applied over the disk surface and then cured to form a first coating with the functionalized end groups bonding to the carbon overcoat. A liquid non-functionalized-PFPE polymer is then applied over the functionalized-PFPE coating and cured to form a second coating. The combined coatings substantially planarize the disk surface so that there is minimal recession between the top of the coating over the lands and the top of the coating over the grooves.

摘要翻译： 用于平面化磁记录盘的方法，其具有升高的平台和凹槽的表面特征，包括在表面特征上形成固化的全氟化聚醚（PFPE）聚合物的两个涂层。 盘可以具有保护性碳覆盖层，其具有复制土地和沟槽的形貌的表面。 将液体官能化的PFPE施加在盘表面上，然后固化以形成具有与碳外涂层结合的官能化端基的第一涂层。 然后将液体非官能化-PFPE聚合物施加到官能化-PFPE涂层上并固化以形成第二涂层。 组合的涂层基本上使盘表面平坦化，使得在涂层的顶部与焊盘顶部之间存在最小的凹陷。

公开(公告)号：US20120314198A1

公开(公告)日：2012-12-13

申请号：US13486064

申请日：2012-06-01

申请人： Sang-Hee Lee ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Soo-Young Lee ,  Qing Dai

发明人： Sang-Hee Lee ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Soo-Young Lee ,  Qing Dai

IPC分类号： G03B27/32

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31769

摘要： In a method of estimating a PSF in the electron-beam lithography process, a linear resist test pattern may be formed on a substrate. A line response function (LRF) may be determined using a cross-sectional profile of the linear resist test pattern. A development rate distribution in a first direction, the first direction may be substantially perpendicular to an extending direction of the linear resist test pattern, may be calculated using the LRF. A line spread function (LSF), which may represent an exposure distribution in the first direction, may be calculated using the development rate distribution. The PSF may be estimated using the LSF.

摘要翻译： 在电子束光刻工艺中估计PSF的方法中，可以在衬底上形成线性抗蚀剂测试图案。 线路响应函数（LRF）可以使用线性抗蚀剂测试图案的横截面轮廓来确定。 可以使用LRF计算第一方向上的显影速率分布，第一方向可以基本上垂直于线性抗蚀剂测试图案的延伸方向。 可以使用开发速率分布来计算可以表示第一方向上的曝光分布的线扩展函数（LSF）。 可以使用LSF估计PSF。

公开(公告)号：US08168310B2

公开(公告)日：2012-05-01

申请号：US12638905

申请日：2009-12-15

申请人： Xiaoping Bian ,  Jack Jyh-Kau Chang ,  Qing Dai ,  Hoa V. Do ,  Yoshihiro Ikeda ,  Kentaro Takano ,  Chu S. Tran

发明人： Xiaoping Bian ,  Jack Jyh-Kau Chang ,  Qing Dai ,  Hoa V. Do ,  Yoshihiro Ikeda ,  Kentaro Takano ,  Chu S. Tran

IPC分类号： G11B5/66

CPC分类号： G11B5/66 ,  G11B5/65

摘要： A magnetic storage medium according to one embodiment includes a substrate; a first oxide magnetic layer formed above the substrate; a second oxide magnetic layer formed above the first oxide magnetic layer; an exchange coupling layer formed above the second oxide magnetic layer, the exchange coupling layer comprising an oxide; and a magnetic cap layer formed above the exchange coupling layer. A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.

摘要翻译： 根据一个实施例的磁存储介质包括基板; 形成在所述基板上的第一氧化物磁性层; 形成在所述第一氧化物磁性层上方的第二氧化物磁性层; 在所述第二氧化物磁性层上形成的交换耦合层，所述交换耦合层包含氧化物; 以及形成在所述交换耦合层上方的磁性盖层。 根据一个实施例的方法包括通过溅射在衬底上方形成高Ku第一氧化物磁性层; 通过溅射在第一氧化物磁性层上方形成低Ku第二氧化物磁性层; 在所述第二氧化物磁性层上方形成CoCrPt氧化物的交换耦合层; 以及在所述交换耦合层上方形成磁性覆盖层。 还介绍了其他系统和方法。