公开(公告)号：US20050235485A1

公开(公告)日：2005-10-27

申请号：US11168215

申请日：2005-06-27

申请人： Qing Dai ,  Jennifer Lu ,  Dennis McKean ,  Eun Row ,  Li Zheng

发明人： Qing Dai ,  Jennifer Lu ,  Dennis McKean ,  Eun Row ,  Li Zheng

IPC分类号： G11B5/10 ,  G11B5/31 ,  G11B5/60 ,  H04R31/00 ,  G11B5/147

CPC分类号： G11B5/6005 ,  G11B5/3106 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3173 ,  Y10S438/976 ,  Y10T29/49023 ,  Y10T29/49041 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49146 ,  Y10T29/49171 ,  Y10T29/49172 ,  Y10T29/49176 ,  Y10T29/49192 ,  Y10T29/4922 ,  Y10T29/49224 ,  Y10T156/1082 ,  Y10T156/1153

摘要： A method is provided for planarization of structures which minimizes step heights, reduces process steps, improves cleanliness, and provides increased ease of debond. Structures are placed with working surfaces facing down onto an adhesive layer such that structures remain fixed during heating. A bi-layer encapsulating film is used to achieve planarization. A carrier is bi-laminated with a thermoplastic film layer followed by a chemically inert protective polymer film layer that can withstand etch and cleaning processes. The thermoplastic layer is laminated on top of the carrier; the polymer layer is laminated on top of the joined thermoplastic layer and carrier. The carrier with bi-layer film is then placed onto the backside of the structures to resist chemical attack from the front side during photostrip and enable planarization. When heat is applied, the bi-layer encapsulating film melts and pushes the polymer layer into the gaps between structures thereby achieving complete planarization.

公开(公告)号：US20060232886A1

公开(公告)日：2006-10-19

申请号：US11425666

申请日：2006-06-21

申请人： Ping-Wei Chang ,  Brad Jackson ,  Bulent Kurdi ,  Jennifer Lu ,  Dennis McKean ,  Eun Row

发明人： Ping-Wei Chang ,  Brad Jackson ,  Bulent Kurdi ,  Jennifer Lu ,  Dennis McKean ,  Eun Row

IPC分类号： G11B5/60

CPC分类号： G11B5/6082 ,  G11B5/3173

摘要： A process to reduce step heights in planarization of thin film carriers in an encapsulation system. The improvements include using an adhesive tape having a thinner adhesive thickness and a stiffer tape for the film sealing the encapsulant on the carrier to result in a low step height surface transition between the carrier and the cured encapsulant. The composition of the encapsulant is modified to reduce the shrinkage upon curing of the encapsulant. The encapsulant may include an absorbent that absorbs the irradiation and cause the top surface to harden first compared to the bulk of the encapsulant, and/or a gas-emitting additive that creates gaseous products that expand upon irradiation to thereby reduce the shrinkage of the encapsulant upon curing. Alternatively, irradiation at very low incidence angle relative to the top surface of the encapsulant causes the top surface to harden before the bulk of the encapsulant.

摘要翻译： 一种降低封装系统中薄膜载体平面化阶跃高度的方法。 这些改进包括使用具有较薄粘合剂厚度的粘合带和用于将密封剂密封在载体上的较硬的胶带，导致载体和固化的密封剂之间的低台阶高度表面过渡。 改进密封剂的组成以减少密封剂固化时的收缩。 密封剂可以包括吸收辐射的吸收剂，并且使顶部表面首先与密封剂的主体相比硬化，和/或产生气体产物的气体发射添加剂，其在照射时膨胀，从而减小密封剂的收缩 固化后。 或者，相对于密封剂的顶表面以非常低的入射角照射导致顶表面在大部分密封剂之前硬化。

公开(公告)号：US06922890B2

公开(公告)日：2005-08-02

申请号：US10295382

申请日：2002-11-15

申请人： Qing Dai ,  Jennifer Qing Lu ,  Dennis Richard McKean ,  Eun Row ,  Li Zheng

发明人： Qing Dai ,  Jennifer Qing Lu ,  Dennis Richard McKean ,  Eun Row ,  Li Zheng

IPC分类号： G11B5/10 ,  G11B5/31 ,  G11B5/60 ,  H04R31/00 ,  H05K3/30

CPC分类号： G11B5/6005 ,  G11B5/3106 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3173 ,  Y10S438/976 ,  Y10T29/49023 ,  Y10T29/49041 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49146 ,  Y10T29/49171 ,  Y10T29/49172 ,  Y10T29/49176 ,  Y10T29/49192 ,  Y10T29/4922 ,  Y10T29/49224 ,  Y10T156/1082 ,  Y10T156/1153

摘要： A method is provided for planarization of structures which minimizes step heights, reduces process steps, improves cleanliness, and provides increased ease of debond. Structures are placed with working surfaces facing down onto an adhesive layer such that structures remain fixed during heating. A bi-layer encapsulating film is used to achieve planarization. A carrier is bi-laminated with a thermoplastic film layer followed by a chemically inert protective polymer film layer that can withstand etch and cleaning processes. The thermoplastic layer is laminated on top of the carrier; the polymer layer is laminated on top of the joined thermoplastic layer and carrier. The carrier with bi-layer film is then placed onto the backside of the structures to resist chemical attack from the front side during photostrip and enable planarization. When heat is applied, the bi-layer encapsulating film melts and pushes the polymer layer into the gaps between structures thereby achieving complete planarization.

摘要翻译： 提供了一种使结构平坦化的方法，其最小化步骤高度，减少工艺步骤，改善清洁度，并提供增加的脱粘方便性。 将结构放置在工作表面朝下的粘合剂层上，使得结构在加热期间保持固定。 使用双层封装膜来实现平坦化。 载体用热塑性薄膜层，然后是化学惰性的保护性聚合物薄膜层进行双层叠，可以承受蚀刻和清洁过程。 热塑性层层压在载体的顶部上; 聚合物层层压在接合的热塑性层和载体的顶部上。 然后将具有双层膜的载体放置在结构的背面，以防止在光带期间从正面的化学侵蚀并且使得能够平坦化。 当施加热量时，双层包封膜熔化并将聚合物层推入结构之间的间隙，从而实现完全平坦化。

公开(公告)号：US07263763B2

公开(公告)日：2007-09-04

申请号：US11168215

申请日：2005-06-27

申请人： Qing Dai ,  Jennifer Qing Lu ,  Dennis Richard McKean ,  Eun Row ,  Li Zheng

发明人： Qing Dai ,  Jennifer Qing Lu ,  Dennis Richard McKean ,  Eun Row ,  Li Zheng

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/6005 ,  G11B5/3106 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3173 ,  Y10S438/976 ,  Y10T29/49023 ,  Y10T29/49041 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49146 ,  Y10T29/49171 ,  Y10T29/49172 ,  Y10T29/49176 ,  Y10T29/49192 ,  Y10T29/4922 ,  Y10T29/49224 ,  Y10T156/1082 ,  Y10T156/1153

摘要： A method is provided for planarization of structures which minimizes step heights, reduces process steps, improves cleanliness, and provides increased ease of debond. Structures are placed with working surfaces facing down onto an adhesive layer such that structures remain fixed during heating. A bi-layer encapsulating film is used to achieve planarization. A carrier is bi-laminated with a thermoplastic film layer followed by a chemically inert protective polymer film layer that can withstand etch and cleaning processes. The thermoplastic layer is laminated on top of the carrier; the polymer layer is laminated on top of the joined thermoplastic layer and carrier. The carrier with bi-layer film is then placed onto the backside of the structures to resist chemical attack from the front side during photostrip and enable planarization. When heat is applied, the bi-layer encapsulating film melts and pushes the polymer layer into the gaps between structures thereby achieving complete planarization.

摘要翻译： 提供了一种使结构平坦化的方法，其最小化步骤高度，减少工艺步骤，改善清洁度，并提供增加的脱粘方便性。 将结构放置在工作表面朝下的粘合剂层上，使得结构在加热期间保持固定。 使用双层封装膜来实现平坦化。 载体用热塑性薄膜层，然后是化学惰性的保护性聚合物薄膜层进行双层叠，可以承受蚀刻和清洁过程。 热塑性层层压在载体的顶部上; 聚合物层层压在接合的热塑性层和载体的顶部上。 然后将具有双层膜的载体放置在结构的背面，以防止在光带期间从正面的化学侵蚀并且使得能够平坦化。 当施加热量时，双层包封膜熔化并将聚合物层推入结构之间的间隙，从而实现完全平坦化。

公开(公告)号：US07300556B2

公开(公告)日：2007-11-27

申请号：US10651632

申请日：2003-08-29

申请人： Cherngye Hwang ,  Eun Row ,  Ning Shi ,  Eric (Yongjian) Sun

发明人： Cherngye Hwang ,  Eun Row ,  Ning Shi ,  Eric (Yongjian) Sun

IPC分类号： C23C14/34

CPC分类号： C23C28/046 ,  C23C14/024 ,  C23C14/0605 ,  C23C14/165 ,  C23C28/04

摘要： A method of physical vapor deposition (PVD) is disclosed in which xenon is used as the operating gas in the vacuum chamber in the deposition of an adhesion layer, preferably silicon, which allows the adhesion layer to be ultra-thin with improved durability over prior art films. The use of argon as is typical in the prior art results in argon atoms being incorporated into the ultra-thin silicon film with deleterious results. In films that are only several angstroms thick, the contamination of the film with argon or other elements can yield a film with reduced adhesion performance and in some cases noble atoms such as argon can escape the film leaving voids or pinholes. The use of the larger and heavier xenon atoms in the vacuum chamber produces a substantially purer film with reduced risk of voids and pinholes. In a preferred embodiment the use of xenon as the operating gas for deposition of the silicon adhesion layer is combined with the use of a filtered cathodic arc (FCA) process to deposit the protective overcoat, preferably carbon based, on a magnetic recording head.

摘要翻译： 公开了一种物理气相沉积（PVD）的方法，其中在沉积粘合层（优选硅）时，将氙用作真空室中的操作气体，其允许粘附层超薄，同时具有改善的耐久性 艺术电影。 如现有技术中典型的使用氩气导致氩原子被掺入到超薄硅膜中，具有有害的结果。 在只有几埃厚的薄膜中，用氩气或其它元素污染薄膜可能产生具有降低的粘附性能的膜，并且在某些情况下，诸如氩气的贵重原子可以逸出留下空隙或针孔的膜。 在真空室中使用更大和更重的氙原子产生基本上更纯的膜，具有降低的空隙和针孔的风险。 在优选的实施方案中，将氙作为沉积硅粘合层的工作气体的使用与使用过滤的阴极电弧（FCA）方法结合，以将保护性外涂层，优选基于碳的沉积物沉积在磁性记录头上。

公开(公告)号：US20050045468A1

公开(公告)日：2005-03-03

申请号：US10651632

申请日：2003-08-29

申请人： Cherngye Hwang ,  Eun Row ,  Ning Shi ,  Eric Sun

发明人： Cherngye Hwang ,  Eun Row ,  Ning Shi ,  Eric Sun

IPC分类号： C23C14/02 ,  C23C14/06 ,  C23C14/16 ,  C23C14/28 ,  C23C14/32 ,  C23C16/27 ,  C23C28/04 ,  G11B5/127

CPC分类号： C23C28/046 ,  C23C14/024 ,  C23C14/0605 ,  C23C14/165 ,  C23C28/04

摘要： A method of physical vapor deposition (PVD) is disclosed in which xenon is used as the operating gas in the vacuum chamber in the deposition of an adhesion layer, preferably silicon, which allows the adhesion layer to be ultra-thin with improved durability over prior art films. The use of argon as is typical in the prior art results in argon atoms being incorporated into the ultra-thin silicon film with deleterious results. In films that are only several angstroms thick, the contamination of the film with argon or other elements can yield a film with reduced adhesion performance and in some cases noble atoms such as argon can escape the film leaving voids or pinholes. The use of the larger and heavier xenon atoms in the vacuum chamber produces a substantially purer film with reduced risk of voids and pinholes. In a preferred embodiment the use of xenon as the operating gas for deposition of the silicon adhesion layer is combined with the use of a filtered cathodic arc (FCA) process to deposit the protective overcoat, preferably carbon based, on a magnetic recording head.

摘要翻译： 公开了一种物理气相沉积（PVD）的方法，其中在沉积粘合层（优选硅）时，将氙用作真空室中的操作气体，其允许粘附层超薄，同时具有改善的耐久性 艺术电影。 如现有技术中典型的使用氩气导致氩原子被掺入到超薄硅膜中，具有有害的结果。 在只有几埃厚的薄膜中，用氩气或其它元素污染薄膜可能产生具有降低的粘附性能的膜，并且在某些情况下，诸如氩气的贵重原子可以逸出留下空隙或针孔的膜。 在真空室中使用更大和更重的氙原子产生基本上更纯的膜，具有降低的空隙和针孔的风险。 在优选的实施方案中，将氙作为沉积硅粘合层的工作气体的使用与使用过滤的阴极电弧（FCA）方法结合，以将保护性外涂层（优选碳基）沉积在磁性记录头上。