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公开(公告)号:US11004991B2
公开(公告)日:2021-05-11
申请号:US15904030
申请日:2018-02-23
Applicant: LG ELECTRONICS INC.
Inventor: Younggu Do , Sungjin Kim , Hyungwook Choi
IPC: H01L31/04 , H01L31/0216 , H01L31/068 , H01L31/20 , H01L31/18 , H01L31/0224 , H01L31/0236 , H01L31/0352 , H01L31/0376
Abstract: Provided is a method of manufacturing a photovoltaic solar cell, including: forming a first conductivity type region that contains a first conductivity dopant, on one surface of a semiconductor substrate and an opposite surface that is opposite to the one surface; removing the first conductivity type region formed on the opposite surface of the semiconductor substrate by performing dry etching; and forming a second conductivity type region that contains a second conductivity type dopant, on the opposite surface of the semiconductor substrate.
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公开(公告)号:US10566487B2
公开(公告)日:2020-02-18
申请号:US15196743
申请日:2016-06-29
Applicant: LG ELECTRONICS INC.
Inventor: Wonjae Chang , Sungjin Kim , Juhwa Cheong , Junyong Ahn
IPC: H01L31/0745 , H01L31/0224 , H01L31/18 , H01L31/0288 , H01L31/0216 , H01L31/0236 , H01L31/0368
Abstract: Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.
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公开(公告)号:US10340412B2
公开(公告)日:2019-07-02
申请号:US15601370
申请日:2017-05-22
Applicant: LG ELECTRONICS INC.
Inventor: Sungjin Kim , Taeyoung Kwon , Seongeun Lee , Gyeayoung Kwag
IPC: H01L31/044 , H01L31/18 , H01L31/0224
Abstract: A solar cell includes a photoelectric conversion layer; and a front electrode on the photoelectric conversion layer, wherein the front electrode includes a plurality of first finger electrodes; a plurality of second finger electrodes; a bus electrode directly connected to at least one of the plurality of first finger electrodes; a plurality of connecting electrodes connected to the plurality of second finger electrodes, the plurality of connecting electrodes forming at least one space therebetween; and an auxiliary electrode formed at the at least one space, wherein the auxiliary electrode connects at least two connecting electrodes of the plurality of connecting electrodes.
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公开(公告)号:US10214183B2
公开(公告)日:2019-02-26
申请号:US15686637
申请日:2017-08-25
Applicant: LG ELECTRONICS INC.
Inventor: Jaeyoung Won , Sungjin Kim , Gumbae Choi
Abstract: A method of defogging an inner surface of a vehicle windshield glass. The method includes a first process of defogging by changing a heating, ventilation, and air-conditioning (HVAC) system from a heating mode to a cooling mode when fogging occurs on the inner surface of the vehicle windshield glass; once the inner surface of the vehicle windshield glass is changed to a defogging state by the first process, a second process of pre-defogging by turning off a compressor of the HVAC system for a predetermined period of time under a prescribed condition to prevent flash fogging; and after the second process, when the predetermined period of time elapses, a third process of turning on the compressor to return from the cooling mode to the heating mode.
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公开(公告)号:US10014419B2
公开(公告)日:2018-07-03
申请号:US15643180
申请日:2017-07-06
Applicant: LG ELECTRONICS INC.
Inventor: Jungmin Ha , Sungjin Kim , Juhwa Cheong , Junyong Ahn , Hyungwook Choi , Wonjae Chang , Jaesung Kim
IPC: H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/0747 , H01L31/02 , H01L31/0368 , H01L31/077
CPC classification number: H01L31/022433 , H01L31/0201 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/03685 , H01L31/0747 , H01L31/077 , H01L31/1824 , H01L31/1864 , H01L31/1868 , Y02E10/50
Abstract: A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a first conductive type semiconductor region forming step of forming a first conductive type semiconductor region on the first surface of the semiconductor substrate, a second conductive type semiconductor region forming step of forming a second conductive type semiconductor region by doping impurities of a second conductive type into a second surface of the semiconductor substrate, a first passivation film forming step of forming a first passivation film on the first conductive type semiconductor region and an electrode forming step of forming a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region.
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公开(公告)号:US09851091B2
公开(公告)日:2017-12-26
申请号:US14829531
申请日:2015-08-18
Applicant: LG ELECTRONICS INC.
Inventor: Soungmin Im , Sungjin Kim , Sungmin Baek
IPC: G02B27/01 , F21V33/00 , F21V19/00 , G01S5/16 , F21Y105/00 , F21Y105/10
CPC classification number: F21V33/0052 , F21V19/001 , F21Y2105/10 , G01S5/163 , G02B27/017 , G02B2027/0138 , G02B2027/0178 , G02B2027/0187
Abstract: Disclosed is a head mounted display (HMD) having light emitting devices. The HMD includes a body having a plurality of surfaces; and a plurality of light emitting units formed on the plurality of surfaces and configured to emit light to outside of the body, wherein each of the plurality of light emitting units includes at least four light emitting devices that are disposed in a straight line in a spaced manner such that a specific cross ratio defines spacing for each of the plurality of light emitting units, a cross ratio of one of the plurality of light emitting units being different from cross ratios of other light emitting units among the plurality of light emitting units.
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公开(公告)号:US09749543B2
公开(公告)日:2017-08-29
申请号:US14868218
申请日:2015-09-28
Applicant: LG ELECTRONICS INC.
Inventor: Sungjin Kim , Yunmi Kwon , Kiseon Lee , Taehyeong Kim
CPC classification number: H04N5/23293 , G03B37/04 , G03B2205/0046 , G06F3/0412 , G06F3/0416 , G06F3/0488 , H04M1/0264 , H04N5/2258 , H04N5/23216 , H04N5/23219 , H04N5/23241 , H04N5/23245 , H04N5/23296 , H04N13/161 , H04N13/239
Abstract: A mobile terminal includes a memory; a touch screen; a first camera having a first capturing angle; a second camera having a second capturing angle that is wider than the first capturing angle; and a controller. The controller is configured to: cause the touch screen to display a first preview image of the first camera, a second preview image of the second camera, or both the first and second preview images overlapping each other; cause the memory to store a first image taken by the first camera in response to a first capture command received while the first preview image is displayed; and cause the memory to store both the first image and a second image taken by the second camera when a wide-angle capturing condition is satisfied while at least one of the first preview image or the second preview image is displayed.
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公开(公告)号:US09722104B2
公开(公告)日:2017-08-01
申请号:US14953264
申请日:2015-11-27
Applicant: LG ELECTRONICS INC.
Inventor: Jungmin Ha , Sungjin Kim , Juhwa Cheong , Junyong Ahn , Hyungwook Choi , Wonjae Chang , Jaesung Kim
IPC: H01L31/0216 , H01L31/0224 , H01L31/0747 , H01L31/02 , H01L31/0368 , H01L31/077 , H01L31/18
CPC classification number: H01L31/022433 , H01L31/0201 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/03685 , H01L31/0747 , H01L31/077 , H01L31/1824 , H01L31/1864 , H01L31/1868 , Y02E10/50
Abstract: Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.
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