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公开(公告)号：US11482436B2
公开(公告)日：2022-10-25
申请号：US15733348
申请日：2019-01-10
IPC分类号： H01L21/677 , H01L21/68 , H01L21/687
摘要： A rotational indexer that is rotatable to allow semiconductor wafers or other items to be moved between various stations arranged in a circular array; the items being moved may be supported by arms of the indexer during such movement. The rotational indexer may be further configured to also cause the items being moved to rotate about other rotational axes to cause rotation of the items relative to the arms supporting them.
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公开(公告)号：US20220037135A1
公开(公告)日：2022-02-03
申请号：US17310574
申请日：2020-02-07
IPC分类号： H01J37/32
摘要： In particular embodiments, anomalous plasma events, which may include formation of an electric arc in a semiconductor processing chamber, may be detected and mitigated. In certain embodiments, a method may include detecting an optical signal emitted by a plasma, converting the optical signal to a voltage signal, and forming an adjusted voltage signal. Responsive to determining that the changes associated with the adjusted voltage signal exceed a threshold, an output power of an RF signal coupled to the chamber may be adjusted. Such adjustment may mitigate formation of the anomalous plasma event occurring within the chamber.
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公开(公告)号：US11111581B2
公开(公告)日：2021-09-07
申请号：US16410057
申请日：2019-05-13
发明人： Chunguang Xia , Ramesh Chandrasekharan , Douglas Keil , Edward J. Augustyniak , Karl Frederick Leeser
IPC分类号： C23C16/455 , C23C16/44 , C23C16/509 , H01J37/32
摘要： A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.
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44.发明申请公开(公告)号：US20210202208A1
公开(公告)日：2021-07-01
申请号：US17204876
申请日：2021-03-17
发明人： Eller Y. Juco , Karl Frederick Leeser , David French , Sunil Kapoor , Aaron Bingham , David Alan Metz , Brett Herzig , Jacob L. Hiester , Brian Knight
IPC分类号： H01J37/32 , H01L21/687
摘要： A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.
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45.发明申请公开(公告)号：US20200075289A1
公开(公告)日：2020-03-05
申请号：US16121408
申请日：2018-09-04
发明人： Eller Y. Juco , Karl Frederick Leeser , David French , Sunil Kapoor , Aaron Bingham , David Alan Metz , Brett Herzig , Jacob L. Hiester , Brian Knight
IPC分类号： H01J37/32 , H01L21/687
摘要： A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.
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公开(公告)号：US10287683B2
公开(公告)日：2019-05-14
申请号：US15177548
申请日：2016-06-09
发明人： Chunguang Xia , Ramesh Chandrasekharan , Douglas Keil , Edward J. Augustyniak , Karl Frederick Leeser
IPC分类号： C23C16/455 , C23C16/44 , C23C16/509 , H01J37/32
摘要： A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.
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