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1.发明公开公开(公告)号：US20230341448A1
公开(公告)日：2023-10-26
申请号：US18002733
申请日：2021-06-22
IPC分类号： G01R23/163 , G01R19/252 , G01R23/12
CPC分类号： G01R23/163 , G01R19/252 , G01R23/12
摘要： An apparatus may include one or more measurement sensors, which may measure power coupled to one or more process stations of the apparatus. The apparatus may additionally include one or more analog-to-digital converters coupled to an output port of a corresponding one of the one or more measurement sensors, which may provide a digital representation of a RF signal measured by the one or more measurement sensors. A processor, coupled to a memory, may determine a crossing of the digital representation of the signal with a reference signal level and may thus determine a frequency content of the RF signal and the characteristic, which may permit the nulling out of phase lag of the one or more measurement sensors.
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公开(公告)号：US20230052089A1
公开(公告)日：2023-02-16
申请号：US17796406
申请日：2021-02-04
发明人： Jeffrey Womack , Karl Frederick Leeser , Curtis W. Bailey , Keith Joseph Martin , Rigel Martin Bruening , Nick Ray Linebarger, JR.
IPC分类号： H01J37/32 , C23C16/44 , C23C16/52 , C23C16/505
摘要： A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. The vial includes a coating material that, when released inside the process chamber under operating conditions of the reaction system, coats an inner wall of the process chamber.
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3.发明授权公开(公告)号：US11557460B2
公开(公告)日：2023-01-17
申请号：US17258584
申请日：2019-07-08
发明人： Eller Y. Juco , Karl Frederick Leeser , Huatan Qiu
IPC分类号： H01J37/32
摘要： A multi-signal radio frequency (RF) source includes an RF source; and a switch including an input in communication with an output of the RF source, a first output and a second output. The switch is configured to selectively connect the input to one of the first output and the second output. An RF generator in communication with the first output of the multi-signal RF source is configured to generate plasma in a processing chamber. A remote plasma generator in communication with the second output of the multi-signal RF source is configured to supply remote plasma to the processing chamber.
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公开(公告)号：US20220181126A1
公开(公告)日：2022-06-09
申请号：US17438354
申请日：2020-03-12
IPC分类号： H01J37/32 , H01L21/687
摘要： In some examples, a substrate support assembly comprises a monolithic ceramic body, a heater element disposed within the monolithic ceramic body, and an RF antenna disposed within the monolithic ceramic body. One or more power lines supplies the heater element and the RF antenna. A lamellar structure is formed or included within the monolithic ceramic body, the lamellar structure including at least one layer having a thermal conductivity different than a thermal conductivity of the monolithic ceramic body.
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公开(公告)号：US11183368B2
公开(公告)日：2021-11-23
申请号：US16052877
申请日：2018-08-02
IPC分类号： H01J37/32 , C23C16/455 , H01L21/683 , H05B1/02 , H05H1/24
摘要： A substrate processing system for processing a substrate within a processing chamber is provided and includes a source terminal, a substrate support, and a tuning circuit. The substrate support holds the substrate and includes first and second electrodes, which receive power from a power source via the source terminal. The tuning circuit is connected to the first electrode or the second electrode. The tuning circuit is allocated for tuning signals provided to the first electrode. The tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is serially connected between the first electrode and the power source and receives a first signal from the power source via the source terminal. The second impedance set is connected between an output of the power source and a reference terminal and receives the first signal from the power source via the source terminal.
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公开(公告)号：US20210340670A1
公开(公告)日：2021-11-04
申请号：US17309032
申请日：2019-10-08
IPC分类号： C23C16/44 , C23C16/34 , C23C16/40 , C23C16/455 , C23C16/52
摘要： An in situ protective coating is deposited on surfaces of chamber components of a reaction chamber at high temperatures. The in situ protective coating may be deposited at a temperature greater than about 200° C. to provide a high quality coating that is resistant to certain types of halogen chemistries, such as fluorine-based species, chlorine-based species, bromine-based species, or iodine-based species. Subsequent coatings or layers may be deposited on the in situ protective coating having different etch selectivities than the underlying in situ protective coating. The in situ protective coating may be deposited throughout the reaction chamber to deposit on surfaces of the chamber components, including on chamber walls.
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公开(公告)号：US20240355600A1
公开(公告)日：2024-10-24
申请号：US18761206
申请日：2024-07-01
IPC分类号： H01J37/32
CPC分类号： H01J37/32944 , H01J37/32165 , H01J37/32972
摘要： In particular embodiments, anomalous plasma events, which may include formation of an electric arc in a semiconductor processing chamber, may be detected and mitigated. In certain embodiments, a method may include detecting an optical signal emitted by a plasma, converting the optical signal to a voltage signal, and forming an adjusted voltage signal. Responsive to determining that the changes associated with the adjusted voltage signal exceed a threshold, an output power of an RF signal coupled to the chamber may be adjusted. Such adjustment may mitigate formation of the anomalous plasma event occurring within the chamber.
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公开(公告)号：US20240213070A1
公开(公告)日：2024-06-27
申请号：US18556910
申请日：2022-04-22
IPC分类号： H01L21/68 , G05B19/4099 , H01L21/687
CPC分类号： H01L21/68 , G05B19/4099 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H01L21/68792 , G05B2219/45031
摘要： Rotational indexers are provided that allow for wafer-by-wafer centering to be performed in association with each wafer pedestal-to-pedestal transfer operation within a multi-station chamber. One such rotational indexer has a rotational center axis that is movable along one or more lateral directions in order to provide wafer centering capability; sealing arrangements with lateral movement capability are provided for such implementations. Another such rotational indexer uses additional rotational capability at the wafer supports of the indexer, in combination with deliberate off-center placement of the wafers on the wafer supports of the indexer, to provide wafer centering capability.
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公开(公告)号：US20240170309A1
公开(公告)日：2024-05-23
申请号：US18283797
申请日：2022-04-27
IPC分类号： H01L21/67
CPC分类号： H01L21/6719 , H01L21/67167 , H01L21/67196 , H01L21/67201
摘要： Various examples include arrangements of semiconductor-processing tools. In one example, a semiconductor-processing tool includes multiple multi-station modules, each having multiple processing stations. At least some of the processing stations are organized in a diamond-shaped arrangement. A vacuum-transfer module is coupled to each of the multi-station modules. The vacuum-transfer module has one or more vacuum-transfer robots to transfer substrates to and from at least one of the multiple processing stations. At least one additional processing-station is located in the vacuum-transfer module. Other systems and apparatuses are disclosed.
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公开(公告)号：US11621150B2
公开(公告)日：2023-04-04
申请号：US16267932
申请日：2019-02-05
IPC分类号： H01J37/32 , C23C16/455
摘要： A system includes an electrode. The electrode includes a showerhead having a first stem portion and a head portion. A plurality of dielectric layers is vertically stacked between the electrode and a first surface of a conducting structure. The plurality of dielectric layers includes M dielectric layers arranged adjacent to the head portion and P dielectric portions arranged around the first stem portion. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap, and the third gap are selected to prevent parasitic plasma between the first surface and the electrode.
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