Abstract:
A delay locked loop circuit and signal delay locking method are provided. First, the start-up circuit minimizes the delay time between an output signal and a reference signal during an initial period. Secondly, the phase correction circuit increases the delay time during an correction period. The present invention ensures that the phase difference between the output signal and the reference signal is correctly detected by the delay locked loop circuit, so that harmonic lock and phase ambiguity can be avoided.
Abstract:
A digital-to-analog converter (DAC) is disclosed, which provides different bias voltages to the most significant bits (MSBs) and the least significant bits (LSBs) of the digital signal. These two bias voltages can be adjusted according to the match among the current source cells, and maintain a particular proportional relationship. The DAC further includes a bias converter for receiving the first bias voltage, and adjusting the second bias voltage according to the match among the current source cells.
Abstract:
An automatic clock generation system is used for automatically outputting a sampling signal and a holding signal to an analog front end circuit and for sampling the analog signal. The clock generation system comprises a clock generator generating a plurality of clock signals and a comparing module. According to the plurality of clock signals, the comparing module compares the analog signal with a first reference signal and outputs a first comparison signal. The comparing module further compares the digital signal outputted by the analog front end circuit with a second reference signal and outputs a second comparison signal. The clock generator selectively outputs a first clock signal, corresponding to the first comparison signal, of the plurality of clock signals as the sampling signal when the first comparison signal received by the clock generator is at a high state. The clock generator further selectively outputs a second clock signal, corresponding to the second comparison signal, of the plurality of clock signals as the holding signal when the second comparison signal received by the clock generator is at the high state.
Abstract:
The present invention is a correction system applying in an analog front end(AFE). The correction system comprises a correction module, a first digital to analog converter(DAC1) and a second digital to analog converter(DAC2). The correction is used to generate a gain error correction and black pixel signal error correction when the black pixel signal is inputted into the AFE. The correction module corrects the digital output signals generated by the AFE according to the gain error correction. The correction module input the black pixel signal error correction to the DAC1 to generate a first analog correction signal to correct the signal inputted into the AFE. The present invention effectively corrects the signal error generated by the AFE to make the AFE output the corrected digital output signal.
Abstract:
This present invention is directed to a stage circuit for a pipelined analog-to-digital converter. The stage circuit includes an amplifier, a comparator, a first compensator and a second compensator, and three modes are developed for the stage circuit in signal processing: a sampling mode, a first amplifying mode and a second amplifying mode. In the sampling mode, the amplifier is inputted with an analog input signal; the comparator compares the analog input signal with a reference signal, and then generates a first digital output code. In the first amplifying mode, the first compensator selectively adds a first compensation value to the analog input signal according to the first digital output code, and then generates a first input signal; the amplifier amplifies the first input signal and then generates a first output signal; the comparator compares the first output signal with the reference signal and then generates a second digital output signal. In the second amplifying mode, the first compensator selectively adds a second compensation value to the analog input signal according to the first digital output code and the second digital output code, and then generates a second input signal; the amplifier amplifies the second input signal and then generates a second output signal; the second compensator selectively chooses a third compensation value according to the first digital output code and the second digital output code, and the third compensation value is amplified and added to the second output signal to generate an analog output signal which sends to the next stage circuit.
Abstract:
The present invention is a pipelined analog-to-digital converter (Pipelined ADC) for converting a first analog signal to a digital data. The converter comprises at least one first stage circuit, at least one second stage circuit, a third stage circuit, and a code adder. Each of the first stage circuits has a first converting rate for converting a first analog signal to at least one digital code and generating a second analog signal. The second stage circuits are serially connected after the first stage circuit. Each of the second stage circuits has a second converting rate which is higher than the first converting rate for converting the second analog signal to at least two digital codes and generating a third analog signal. The third stage circuit serially connected after the second stage circuits is used for converting the third analog signal to at least one digital code. The code adder is used for combining the digital codes to generate the digital data. Thus, the later half stage circuits of the Pipelined ADC has a higher converting rate, so the converter of the present invention can reduce the number of the stage circuits needed and further reduces the area of the converter.
Abstract:
A vertical structure and a method of forming a vertical structure are disclosed. A partially processed semiconductor wafer is provided having all devise levels completed, including a topmost interlevel dielectric layer through which metallic vias are formed for electrical connection. A first metal level is formed. An IMD level is then formed by forming a blanket dielectric layer over the first metal level, patterning and etching the dielectric layer to form arrays of trenches passing through the dielectric layer, filling the trenches with a conducting material, and performing CMP. A number of metal level, IMD level pairs are formed, where the number could be zero. Bonding metal patterns are deposited, wires are bonded onto the bonding metal patterns and a passivation layer is formed.
Abstract:
A structure and a process of a nonvolatile memory are provided. By forming a oxide/nitride/oxide (ONO) layer in a floating gate thin oxide (FLOTOX) memory, the same data can be programmed in one nonvolatile memory to guarantee the reliability but without using two nonvolatile memories. Besides, people can program different data separately to achieve the purpose of multi-state memory.
Abstract:
A semiconductor wafer includes a plurality of sensors. Each of the sensors has a field oxide transistor, and a detecting circuit electrically connected to the field oxide transistor for detecting if the field oxide transistor is switched on or off and generating corresponding detecting signals. The field oxide of a different field oxide transistor has a different thickness. Each field oxide transistor is coupled to a corresponding detecting circuit for detecting radiation impinging on the semiconductor wafer.
Abstract:
A method for fabricating a static random access memory polyload resistor comprising the steps of first providing a semiconductor substrate having a transistor formed thereon, wherein the transistor includes a gate, a source region and a gate region. Thereafter, a dielectric layer is formed over the substrate, and then photolithographic and etching processes are used to remove a portion of the dielectric layer forming a plurality of vias. Next, a polysilicon layer is formed over the substrate, and then photolithographic and etching processes are again used to pattern the polysilicon layer. Then, ions are doped to form a doped polysilicon layer. In the subsequent step, an anti-oxidation layer is formed over the substrate. Then, photolithographic and etching processes are again used to remove a portion of the polysilicon layer and the anti-oxidation layer forming interconnect regions and load resistor regions. Finally, a thermal oxidation is carried out followed by the removal of the anti-oxidation layer.