公开(公告)号：US09324735B2

公开(公告)日：2016-04-26

申请号：US14348434

申请日：2013-12-16

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jun Cheng ,  Haijing Chen ,  Chunsheng Jiang

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/45 ,  H01L29/423 ,  H01L21/467 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L21/467 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present invention provides an array substrate and a manufacturing method thereof, a display panel and a display device. The array substrate includes a plurality of pixel units, each of which includes: a TFT area provided with a TFT including a gate, a gate insulation layer, an active area, a source and a drain; and a display area provided with a pixel electrode.

Abstract translation: 本发明提供一种阵列基板及其制造方法，显示面板和显示装置。 阵列基板包括多个像素单元，每个像素单元包括：TFT区域，其设置有包括栅极，栅极绝缘层，有源区域，源极和漏极的TFT; 以及设置有像素电极的显示区域。

公开(公告)号：US09273390B2

公开(公告)日：2016-03-01

申请号：US14708786

申请日：2015-05-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wulin Shen ,  Chunsheng Jiang ,  Qing Dai ,  Haijing Chen ,  Guangcai Yuan ,  Jingang Fang

IPC: C23C16/00 ,  C23C16/50 ,  C23C14/30 ,  C23C14/12 ,  C23C14/24 ,  B05B5/00 ,  B05B5/03 ,  B05B5/053 ,  B05D1/00 ,  H01L51/00 ,  H01L51/56 ,  C23C14/04

CPC classification number: H01L51/0013 ,  B05B5/001 ,  B05B5/0255 ,  B05B5/03 ,  B05B5/0533 ,  B05B5/057 ,  B05D1/007 ,  B05D1/60 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  C23C14/243 ,  C23C14/30 ,  C23C14/32 ,  H01L51/001 ,  H01L51/0011 ,  H01L51/56

Abstract: An apparatus and method for coating an organic film are disclosed. The apparatus comprises an evaporation device, an electron emission device and a spray device; wherein the evaporation device comprises an evaporation container, the evaporation container is a linear evaporation container, in which a uniform organic gas is generated; the electron emission device is horizontally arranged over the evaporation container such that the organic gas evaporated in the evaporation container is uniformly charged and becomes charged organic gas; the spray device is provided with an electric field, under which the charged organic gas is moved toward a substrate so as to deposit the organic film on the substrate.

公开(公告)号：US09087763B2

公开(公告)日：2015-07-21

申请号：US14006793

申请日：2012-10-31

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chunsheng Jiang

IPC: H01L33/00 ,  H01L29/24 ,  H01L21/00 ,  H01L51/40 ,  H01L27/15 ,  H01L51/56 ,  H01L51/00 ,  H01L51/50 ,  H01L27/32

CPC classification number: H01L27/153 ,  H01L27/3246 ,  H01L27/3283 ,  H01L51/0005 ,  H01L51/5012 ,  H01L51/56

Abstract: A light-emitting diode (LED) display substrate, a method for manufacturing the same, and a display device are provided and involve the display field. The method for manufacturing the LED display substrate comprises: forming a transparent conductive anode (201) on a substrate (200); forming a pixel region defined by a first PDL (202) and a second PDL (203) on the substrate (200) on which the anode (201) is formed, in which the second PDL (203) made of a hydrophobic material is disposed on the first PDL (201) made of a hydrophilic material; filling a luminescent material into the pixel region to form an emission layer (204) with the luminescent material; and forming a conductive cathode (205) on the substrate (200) on which the emission layer (204) is formed. The manufacturing method allows the luminescent materials to be flatly laid on the LED display substrate so as to improve the luminous quality of the LED display substrate.

Abstract translation: 提供了发光二极管（LED）显示基板，其制造方法和显示装置，并且涉及显示领域。 制造LED显示基板的方法包括：在基板（200）上形成透明导电阳极（201）; 在形成有阳极（201）的基板（200）上形成由第一PDL（202）和第二PDL（203）限定的像素区域，其中设置由疏水材料制成的第二PDL（203） 在由亲水材料制成的第一PDL（201）上; 将发光材料填充到像素区域中以与发光材料形成发射层（204）; 以及在其上形成有发射层（204）的衬底（200）上形成导电阴极（205）。 该制造方法允许将发光材料平坦放置在LED显示基板上，以提高LED显示基板的发光质量。

公开(公告)号：US20150171219A1

公开(公告)日：2015-06-18

申请号：US14347124

申请日：2013-12-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chunsheng Jiang ,  Jingfei Fang

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02178 ,  H01L21/02244 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66969

Abstract: Embodiments of the invention provide a thin film transistor, a method of manufacturing the same, an array substrate comprising the thin film transistor and a display device. The method of manufacturing the thin film transistor comprises steps of forming a gate electrode (220), a gate insulating layer (230), an oxide active layer (240), a source electrode (260) and a drain electrode (270) on a substrate (210). After forming the oxide active layer (240), the method further comprises a step of forming an etch barrier layer (250) of a metal oxide on the oxide active layer (240).

Abstract translation: 本发明的实施例提供一种薄膜晶体管，其制造方法，包括薄膜晶体管的阵列基板和显示装置。 制造薄膜晶体管的方法包括以下步骤：在栅极电极（220），栅极绝缘层（230），氧化物活性层（240），源极（260）和漏极（270）上形成 衬底（210）。 在形成氧化物活性层（240）之后，该方法还包括在氧化物活性层（240）上形成金属氧化物的蚀刻阻挡层（250）的步骤。

公开(公告)号：US10204779B2

公开(公告)日：2019-02-12

申请号：US14905982

申请日：2015-08-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Liu ,  Chunsheng Jiang

IPC: H01L21/20 ,  H01L21/02 ,  H01L29/49 ,  H01L29/40 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45 ,  H01L29/51 ,  H01L27/12

Abstract: The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate comprising the thin film transistor and a manufacturing method thereof, and a display apparatus comprising the array substrate. The manufacturing method of the thin film transistor comprises steps of forming a gate, a gate insulating layer, a semiconductor active layer, a source and a drain on a substrate, wherein the steps of forming the gate insulating layer and the semiconductor active layer comprise: preparing an insulating film, the insulating film comprises metal oxide insulating material; performing ion implantation on a predefined region of the insulating film, so that the metal oxide insulating material of partial-thickness of the insulating film in the predefined region is transformed into metal oxide semiconductor material to form the semiconductor active layer, and the rest of the insulating film forms the gate insulating layer.

公开(公告)号：US09882172B2

公开(公告)日：2018-01-30

申请号：US14429047

申请日：2014-07-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chunsheng Jiang ,  Jingfei Fang ,  Wei Liu

IPC: H01L51/56 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L51/56 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/5206 ,  H01L51/5237

Abstract: Disclosed are an OLED backplane and fabrication method. The fabrication method comprises: forming a pattern including a TFT on a substrate; forming a passivation layer on the substrate including the TFT pattern; forming a color filter on the substrate including the passivation layer; forming a resin layer on the substrate including the color filter; heavily doping the resin layer of a first region in each sub-pixel on the substrate including the resin layer, the resin layer in the first region being conductive, the first region including a passivation layer via-hole region, a pixel electrode region and a connecting region between the passivation layer via-hole region and the pixel electrode region, the passivation-layer via-hole region being a position where a drain electrode of the TFT is located; and forming an organic light-emitting layer and a cathode sequentially on the substrate after the resin layer of the first region is heavily doped.

公开(公告)号：US09741750B2

公开(公告)日：2017-08-22

申请号：US15120736

申请日：2015-09-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chunsheng Jiang

IPC: H01L27/12 ,  H01L21/77 ,  H01L29/786 ,  H01L21/02 ,  H01L21/426 ,  H01L29/66

CPC classification number: H01L27/127 ,  H01L21/02178 ,  H01L21/02321 ,  H01L21/02612 ,  H01L21/426 ,  H01L21/77 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor, a pixel structure, an array substrate, a display device, a method for manufacturing a thin film transistor, and a method for manufacturing a pixel structure are disclosed. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, wherein a first passivation layer made from an aluminum oxide material is provided on the source electrode and the drain electrode, and an active layer made from an aluminum oxide material doped with ions is provided in a region of the first passivation layer corresponding to the gate electrode. Since the first passivation layer as insulation material is doped with the ions to form an active layer, the etching stop layer may be omitted, thereby simplifying the structure of the thin film transistor.

公开(公告)号：US09704998B2

公开(公告)日：2017-07-11

申请号：US14653134

申请日：2014-08-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingfei Fang ,  Chunsheng Jiang

IPC: H01L29/786 ,  H01L21/477 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78618 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present invention discloses a thin film transistor, a method of manufacturing the thin film transistor, a display substrate and a display apparatus. The method comprising steps of: forming an active material layer on a substrate; forming an etch barrier material layer on the active material layer, wherein the etch barrier material layer being made of a conductive material capable of blocking a source and drain etching liquid; forming an active layer pattern and an initial etch barrier layer pattern by performing a single patterning process on the active material layer and the etch barrier material layer, wherein the initial etch barrier layer pattern comprising a first region, a second region and a third region, the first region and the third region being regions for forming a source and a drain, respectively, the second region being a region of the initial etch barrier layer pattern except the first and third regions; forming the source and the drain in the first region and the third region, respectively, by a patterning process; converting the conductive material in the second region of the initial etch barrier layer pattern into an insulation material by an annealing process, so as to form an etch barrier layer.

公开(公告)号：US09679953B2

公开(公告)日：2017-06-13

申请号：US14435895

申请日：2014-08-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jingfei Fang ,  Chunsheng Jiang ,  Yanzhao Li

IPC: H01L27/32 ,  H01L27/12 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3248 ,  H01L27/1288 ,  H01L27/322 ,  H01L27/3258 ,  H01L51/5206 ,  H01L51/56 ,  H01L2227/323

Abstract: The present invention discloses a WOLED back panel and a method of manufacturing the same. The method comprises: forming a pattern of a color filter layer on a substrate; exposing the pattern of the color filter layer by halftone exposure so as to form a groove structure in the pattern of the color filter layer; forming a pattern of a resin material layer on a surface of the substrate formed with the groove structure, and heavily doping a partial region of the resin material layer so as to form a heavily doped part having a conductivity; the heavily doped partial region of the resin material layer corresponding to a pixel electrode region, a via region, and a connection region between the pixel electrode region and the via region; and forming an organic light-emitting layer and a cathode in order on a surface of the substrate after heavily doping the partial region of the resin material layer. The production cost is reduced in the present invention by forming a groove structure in the color filter layer instead of manufacturing a conventional pixel defining layer.

公开(公告)号：US09614098B2

公开(公告)日：2017-04-04

申请号：US14435688

申请日：2014-06-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Zhao ,  Chunsheng Jiang ,  Guangcai Yuan

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/426 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L21/02565 ,  H01L21/426 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first, second, and third pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.