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公开(公告)号:US10202544B2
公开(公告)日:2019-02-12
申请号:US15523477
申请日:2016-11-16
Applicant: BOE TECHNOLOGY GROUP CO., LTD
Inventor: Tingting Zhou , Bin Zhang , Yonglian Qi , Dini Xie , Yong Jiang
IPC: G03F7/004 , C09K11/02 , C08G77/18 , G03F7/033 , G03F7/038 , G02B1/04 , G03F7/00 , G03F7/031 , G03F7/075 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/027 , C09K11/56 , C09K11/88 , G02F1/1335
Abstract: The present disclosure provides a light-diffusion powder, a quantum-dot-containing photoresist, and a quantum-dot-containing color film, and their preparation methods. The light-diffusion powder is obtained from an alkoxysilane having a chemical structure represented by formula (I): where R1 includes a C1˜C50 alkyl group, and R′ includes one or more of an alkyl and a substituted alkyl group.
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42.
公开(公告)号:US10115765B2
公开(公告)日:2018-10-30
申请号:US14909712
申请日:2015-08-10
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Jincheng Gao , Zhanfeng Cao , Qi Yao , Zhengliang Li , Xiaolong He , Bin Zhang , Xiangchun Kong , Wei Zhang
IPC: H01L27/146 , G01T1/24
Abstract: The present disclosure discloses an X-ray flat-panel detector and a method for preparing the same, and a white insulating material. The X-ray flat-panel detector includes: a thin-film transistor substrate; an insulating reflection layer, which is provided on the thin-film transistor substrate and has a reflection function, wherein the insulating reflection layer is provided with a contact hole through which a source electrode of the thin-film transistor substrate is exposed; a pixel electrode, which is provided on the insulating reflection layer, wherein the pixel electrode is electrically connected to the source electrode of the thin-film transistor substrate via the contact hole; a photodiode, which covers the pixel electrode; an electrode, which is provided on the photodiode; and an X-ray conversion layer, which is provided on the electrode.
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公开(公告)号:US20180284153A1
公开(公告)日:2018-10-04
申请号:US15841911
申请日:2017-12-14
Applicant: BOE Technology Group Co., Ltd.
Inventor: Yucheng Chan , Dong Li , Bin Zhang
IPC: G01R1/04 , G01R31/317 , G01R3/00
CPC classification number: G01R1/0416 , G01R3/00 , G01R31/2621 , G01R31/31723
Abstract: A test circuit, a test method, an array substrate and a manufacturing method thereof are provided. The test circuit includes a plurality of to-be-tested units and plurality of test electrodes connected to the to-be-tested units. The plurality of to-be-tested units are arranged in a matrix. At least one of the test electrodes is multiplexed by the plurality of to-be-tested units in a row direction and at least one of the test electrodes is multiplexed by the plurality of to-be-tested units in a column direction.
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公开(公告)号:US20180233073A1
公开(公告)日:2018-08-16
申请号:US15512640
申请日:2016-09-05
Inventor: Dianzheng Dong , Bin Zhang , Qiang Zhang , Guangxing Wang , Kan Zhang , Junwei Wang , Xin Gai
IPC: G09G3/00 , F21V8/00 , G09G3/3208 , G09G3/36
CPC classification number: G09G3/006 , G02B6/0008 , G09G3/00 , G09G3/20 , G09G3/3208 , G09G3/36 , G09G2310/0264
Abstract: This disclosure relates to a device and method for detecting performance of panel driving circuit. The device comprises a plurality of point light sources, a plurality of optical fibers, a light source driving circuit and a detection circuit. The predetermined point light sources are corresponding to predetermined optical fibers, the predetermined optical fibers being one optical fiber or multiple optical fibers of a predetermined combination corresponding to elements of the panel driving circuit. The optical fibers are configured for transmitting the light emitted by the point light sources onto the elements of the panel driving circuit. The detection circuit is for obtaining a performance parameter of the element of the panel driving circuit based on a corresponding relationship between an intensity of illumination for the element of the panel driving circuit and a current value of the element as well as an output signal of the panel driving circuit.
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45.
公开(公告)号:US10049612B2
公开(公告)日:2018-08-14
申请号:US14892521
申请日:2015-04-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Bin Zhang , Zhanfeng Cao , Xiangchun Kong , Qi Yao , Jincheng Gao , Zhengliang Li , Xiaolong He
CPC classification number: G09G3/32 , G02B26/02 , G09G3/3433 , G09G2320/0646 , H01L27/1214 , H01L27/32
Abstract: The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.
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公开(公告)号:US10007300B2
公开(公告)日:2018-06-26
申请号:US15071249
申请日:2016-03-16
Inventor: Bin Zhang , Yu Xie , Zhihan Zhou
CPC classification number: G06F1/1652 , G06F3/041 , G06F3/045 , G09G3/006 , G09G2290/00 , G09G2380/02 , H01L27/1218 , H01L27/124
Abstract: Embodiments of the present invention disclose an array substrate including: a flexible supporting base on which a plurality of rows of scanning lines and a plurality of columns of data lines are provided and are crossed to define a plurality of pixel units on the flexible supporting base. The flexible supporting base is further provided thereon with a plurality of rows of first signal lines and a plurality of columns of second signal lines, and conductor layers. Each of the conductor layers is located within one of at least some of the pixel units, is connected to a corresponding column of second signal line, and is configured for generating an electrical signal that is associated with a bent degree of the array substrate, and for outputting the electrical signal via the corresponding column of second signal line under driving of a signal from the first signal line. Meanwhile, a display panel and a method of detecting a bent degree of the same are disclosed.
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公开(公告)号:US09997583B2
公开(公告)日:2018-06-12
申请号:US14768983
申请日:2014-12-03
Inventor: Chunbing Zhang , Bin Zhang , Shuai Hou , Yichiang Lai , Liang Zhang
IPC: H01L27/32 , H01L51/52 , G02F1/1343 , G02F1/137 , G02F1/139 , H01L25/04 , G02F1/1333
CPC classification number: H01L27/3267 , G02F1/134309 , G02F1/13439 , G02F1/137 , G02F1/1396 , G02F2001/133342 , G02F2201/44 , G02F2203/01 , G02F2203/02 , H01L25/048 , H01L27/3211 , H01L27/3232 , H01L51/5271 , H01L2251/5315 , H01L2251/5323
Abstract: A double-faced display panel and a double-faced display device comprising the double-faced display panel are provided. The double-faced display panel comprises: a first display sub-unit, provided with a first display surface and a first non-display surface opposite to each other; a second display sub-unit, provided with a second display surface and a second non-display surface opposite to each other, and arranged back to back with the first display sub-unit, the second non-display surface facing the first non-display surface; and a reflection unit, arranged between the first display sub-unit and the second display sub-unit. The reflection unit is configured to reflect display light emitted from the first display sub-unit back to the first display sub-unit and reflect display light emitted from the second display sub-unit back to the second display sub-unit.
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公开(公告)号:US09735194B2
公开(公告)日:2017-08-15
申请号:US15088177
申请日:2016-04-01
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Jincheng Gao , Zhanfeng Cao , Xiangchun Kong , Qi Yao , Zhengliang Li , Bin Zhang , Xiaolong He
IPC: H01L27/146 , G01T1/20 , G01T1/24
CPC classification number: H01L27/14663 , G01T1/2018 , G01T1/241 , H01L27/14612
Abstract: The present disclosure provides an X-ray flat panel detector including: a base substrate; thin film transistors (TFTs), a pixel electrode layer, photodiodes, a transparent electrode layer, and an X-ray conversion layer which are arranged on the base substrate; and an electric field application portion configured to generate an electric field, wherein the photodiodes are arranged in the electric field, and a moving direction of negative charges when visible light rays are converted to electrical signals by the photodiodes is substantially same as a direction of the electric field. In this detector, it is applied a direction of the electric field which is substantially same as the moving direction of negative charges in the photodiode, so that movement of holes and electrons of the photodiode may be accelerated under an influence of the electric field, and thus the electrical signal may promptly arrive at the pixel electrode. As a result, it is improved the quantum detection efficiency and the sensitivity of the X-ray flat panel detector.
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49.
公开(公告)号:US20170176863A1
公开(公告)日:2017-06-22
申请号:US15313910
申请日:2015-09-29
Applicant: BOE Technology Group Co., Ltd.
Inventor: Bin Zhang , Tingting Zhou , Feng Zhang , Wei Zhang , Jincheng Gao
IPC: G03F7/40 , H01L33/06 , H01L33/30 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/038 , H01L33/00 , H01L33/28
CPC classification number: G03F7/40 , G03F7/038 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/405 , H01L33/0062 , H01L33/0083 , H01L33/06 , H01L33/28 , H01L33/30 , H01L51/0018 , H01L51/502
Abstract: A photoresist, a patterning method of a quantum dot layer, a QLED, a quantum dot color filter and a display device are disclosed, which can solve the problem that current patterning methods destroy quantum dots. The patterning method of a quantum dot layer includes the steps of: forming a hydrophilic photoresist pattern which comprises forming a photoresist material layer on a substrate by using a photoresist, patterning the photoresist material layer to form a photoresist pattern, and subjecting the photoresist to hydrophilic treatment; applying quantum dots; removing the quantum dots retained on the photoresist pattern; and stripping the photoresist pattern. The patterning method of a quantum dot layer in the present disclosure can improve the hydrophilic performance of the photoresist and reduce the adhesion of the lipophilic quantum dots on the photoresist.
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公开(公告)号:US20170162612A1
公开(公告)日:2017-06-08
申请号:US15308991
申请日:2016-01-25
Applicant: BOE Technology Group Co., Ltd.
Inventor: Qi Yao , Feng Zhang , Zhanfeng Cao , Xiaolong He , Bin Zhang , Zhengliang Li
IPC: H01L27/12 , H01L29/786 , H01L29/45 , H01L29/66
CPC classification number: H01L27/1288 , H01L27/1225 , H01L27/127 , H01L29/45 , H01L29/66969 , H01L29/7869
Abstract: A preparation method of an oxide thin-film transistor is disclosed, and this method includes: forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode; forming of the active layer, the source electrode and the drain electrode includes: sequentially forming an oxide semiconductor thin film and a source-drain electrode metal thin film on a base substrate, an entire surface of the oxide semiconductor thin film being in direct contact with the source-drain electrode metal thin film; and patterning the oxide semiconductor thin film and the source-drain electrode metal thin film with a dual-tone mask so as to form the active layer, the source electrode and the drain electrode by a single patterning process.
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