公开(公告)号：US11446661B2

公开(公告)日：2022-09-20

申请号：US16643464

申请日：2019-03-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Zhengliang Li

IPC: B01L3/00 ,  G01N35/10

Abstract: A microfluidic channel and a preparation method and an operation method thereof. The microfluidic channel includes: a channel structure, including a channel for a liquid sample to flow through and a channel wall surrounding the channel. The channel wall includes an electrolyte layer made of an electrolyte material; and a control electrode layer, at a side of the electrolyte layer away from the channel. The control electrode layer overlaps with the electrolyte layer with respect to the channel.

公开(公告)号：US10281782B2

公开(公告)日：2019-05-07

申请号：US15229601

申请日：2016-08-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Shi Shu ,  Zhanfeng Cao ,  Bin Zhang ,  Xiaolong He ,  Qi Yao ,  Jincheng Gao ,  Feng Guan ,  Xuefei Sun

IPC: H01L21/02 ,  G02F1/1362 ,  H01L27/12

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes the following operations: forming a light shielding layer formed of a metal blacken production on a base substrate, wherein the metal blacken production is a product by blackening a metal; forming a preset film layer on the base substrate which is provided with the light shielding layer; forming both a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process. The method of forming a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process saves one patterning process.

公开(公告)号：US10217353B2

公开(公告)日：2019-02-26

申请号：US15327412

申请日：2016-06-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Feng Guan ,  Zhanfeng Cao ,  Zhengliang Li ,  Qi Yao ,  Yaohui Gu

IPC: H04B10/116 ,  G08C23/04 ,  G06F3/14 ,  G05B15/02

Abstract: A data transmitting method, a data receiving method and the related device and system are provided. The data transmitting device includes a display screen, a first determination module, configured to determine one or more transmitting regions of the display screen, and a transmitting module, configured to transmit, by controlling a display of the one or more transmitting regions, target data in a format of a machine language via optical signals. The data receiving device includes a panel on which a plurality of optical sensors is arranged, a second determination module, configured to determine one or more receiving regions of the panel each corresponding to one or more of the optical sensor, and a receiving module, configured to receive, through each optical sensor in the one or more receiving regions, target data in a format of a machine language transmitted via optical signals.

公开(公告)号：US10199504B2

公开(公告)日：2019-02-05

申请号：US14905251

申请日：2015-08-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Qi Yao ,  Zhanfeng Cao ,  Bin Zhang ,  Xiaolong He ,  Jincheng Gao ,  Xiangchun Kong ,  Wei Zhang

IPC: H01L29/10 ,  H01L29/786 ,  H01L21/28 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49

Abstract: Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.

公开(公告)号：US10192893B2

公开(公告)日：2019-01-29

申请号：US14895352

申请日：2015-05-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhanfeng Cao ,  Feng Zhang ,  Qi Yao ,  Jincheng Gao ,  Bin Zhang ,  Xiaolong He ,  Zhengliang Li ,  Wei Zhang

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1345

Abstract: An array substrate and a display device are provided. The array substrate comprises a plurality of signal lines (40), a plurality of connecting lines (50) and a driving module (60) in a peripheral region (1) outside a display region (2); the connecting lines (50) are configured for connecting the signal lines (40) and the driving module (60), to transmit signal from the signal lines (40) to the driving module (60), wherein, at least one of the connecting lines (50) and at least one of the signal lines (40) are designed to intersect with and insulated from each other in a first region (N). The at least one of the signal lines (40) includes, in a second region (0) other than the first region (N), a first electrode line layer (401) and a second electrode line layer (402), while, in the first region (N), includes the first electrode line layer (401) but does not include the second electrode line layer (402). The array substrate may prevent problems of electrostatic accumulation or short circuit from occurring between the connecting lines (50) and the second electrode line layer (402).

公开(公告)号：US10181482B2

公开(公告)日：2019-01-15

申请号：US15306550

申请日：2016-02-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Qi Yao ,  Bin Zhang ,  Zhanfeng Cao ,  Wei Zhang ,  Xuefei Sun ,  Bin Zhou ,  Jincheng Gao

IPC: H01L29/12 ,  H01L27/12 ,  H01L21/027 ,  H01L29/786

Abstract: According to an embodiment of the present disclosure, a method for manufacturing the array substrate includes forming a first transparent conductive layer and a metallic layer successively on a base substrate, and forming a gate electrode, a source electrode, a drain electrode and a first transparent electrode by one patterning process.

公开(公告)号：US10126544B2

公开(公告)日：2018-11-13

申请号：US15525445

申请日：2016-07-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong He ,  Zhanfeng Cao ,  Qi Yao ,  Bin Zhang ,  Zhengliang Li ,  Wei Zhang ,  Tingting Zhou ,  Jincheng Gao ,  Jiushi Wang

IPC: G02B26/00

Abstract: A display panel includes a first substrate and a second substrate which are arranged opposed to each other. The space between the first substrate and the second substrate is separated into a plurality of sub-pixel regions. Within each sub pixel region, a first electrode, a first fluid layer, a second fluid layer, a hydrophobic dielectric layer and a second electrode are arranged in this order. The first fluid layer is made of hydrophilic liquid. The second fluid layer is made of ink. When no electric field is applied between the first electrode and the second electrode, the ink spreads over the surface of the hydrophobic dielectric layer. When an electric field is applied between the first electrode and the second electrode, the ink aggregates to expose the hydrophobic dielectric layer.

公开(公告)号：US20180019346A1

公开(公告)日：2018-01-18

申请号：US15718778

申请日：2017-09-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jincheng GAO ,  Bin Zhang ,  Xiaolong He ,  Xiangchun Kong ,  Qi Yao ,  Zhanfeng Cao ,  Zhengliang Li

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

公开(公告)号：US09812469B2

公开(公告)日：2017-11-07

申请号：US15150549

申请日：2016-05-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhanfeng Cao ,  Feng Zhang ,  Bin Zhang ,  Xiaolong He ,  Jincheng Gao ,  Qi Yao ,  Zhengliang Li ,  Xiangchun Kong

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L27/124 ,  H01L29/41733 ,  H01L29/42384

Abstract: An array substrate and a display device are disclosed. The array substrate includes a peripheral area in which a plurality of gate electrode material lines, a plurality of source-drain electrode material lines and a plurality of first metal lines are disposed. Overlapping areas are provided between or among the gate electrode material lines, the source-drain material lines and the first metal lines; a number of the overlapping areas of the source-drain material lines and the first metal lines is less than a number of the overlapping areas of the source-drain material lines and the gate electrode material lines; the gate electrode material lines, the source-drain material lines and the first metal lines are configured as connecting lines of circuits in the peripheral area.

公开(公告)号：US20170098714A1

公开(公告)日：2017-04-06

申请号：US14905251

申请日：2015-08-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Qi Yao ,  Zhanfeng Cao ,  Bin Zhang ,  Xiaolong He ,  Jincheng Gao ,  Xiangchun Kong ,  Wei Zhang

IPC: H01L29/786 ,  H01L21/28 ,  H01L29/49 ,  H01L27/12 ,  H01L29/45

CPC classification number: H01L29/78606 ,  H01L21/28 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/4908

Abstract: Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.