METHOD AND APPARATUS FOR INTERRUPTING MEMORY BANK REFRESH

    公开(公告)号:US20190385669A1

    公开(公告)日:2019-12-19

    申请号:US16012366

    申请日:2018-06-19

    Applicant: Apple Inc.

    Abstract: A memory controller includes a state machine that initiates a memory refresh of a DRAM (having a number of banks) by sending thereto a refresh command. Responsive to receiving the command, the DRAM may perform a per-bank refresh in which individual ones of the banks are refreshed in succession, one at a time. Upon receiving a high priority transaction, a determination is made as to the number of memory banks that have currently been refreshed in the per-bank refresh. If the number of banks refreshed is less than a threshold value, the per-bank refresh is aborted.

    Method and apparatus for interrupting memory bank refresh

    公开(公告)号:US10510396B1

    公开(公告)日:2019-12-17

    申请号:US16012366

    申请日:2018-06-19

    Applicant: Apple Inc.

    Abstract: A memory controller includes a state machine that initiates a memory refresh of a DRAM (having a number of banks) by sending thereto a refresh command. Responsive to receiving the command, the DRAM may perform a per-bank refresh in which individual ones of the banks are refreshed in succession, one at a time. Upon receiving a high priority transaction, a determination is made as to the number of memory banks that have currently been refreshed in the per-bank refresh. If the number of banks refreshed is less than a threshold value, the per-bank refresh is aborted.

    Reference voltage prediction in memory subsystem

    公开(公告)号:US10408863B2

    公开(公告)日:2019-09-10

    申请号:US15848804

    申请日:2017-12-20

    Applicant: Apple Inc.

    Abstract: A method and apparatus for predicting a reference voltage in a memory subsystem is disclosed. A memory subsystem includes a memory controller coupled to a memory. The memory controller includes a lookup table having a number of different reference voltage values each corresponding to one of a number of different performance states. The memory controller further includes calibration circuitry configured to determine reference voltages for operation in various performance states. Responsive to returning to a performance state after operating in another, the calibration circuitry may restore the reference voltage to its most recently used value, and also obtain a predicted reference voltage. Calibrations may be performed at both the restored reference voltage and the predicted reference voltage obtained from the lookup table. The subsequent operating reference voltage may then be selected based on which of the two calibrations resulted in the largest data eye width.

    SYSTEMS AND METHODS FOR REDUCING PERFORMANCE STATE CHANGE LATENCY

    公开(公告)号:US20190196740A1

    公开(公告)日:2019-06-27

    申请号:US15849945

    申请日:2017-12-21

    Applicant: Apple Inc.

    CPC classification number: G06F3/0659 G06F3/0611 G06F3/0683

    Abstract: A method and apparatus for performing performance state changes are disclosed. A power management circuit may be configured to receive requests for changes to first and second performance states for at least at least one memory of a plurality of memories. In response to a determination that a change to the first performance state is in progress, when the request to change to the second performance state is received, the power management controller may send a notification to a controller coupled to the memories. The controller may halt scheduling of memory interface calibration operations for the at least one memory based on the notification.

    Memory controller half-clock delay adjustment
    48.
    发明授权
    Memory controller half-clock delay adjustment 有权
    内存控制器半时钟延迟调整

    公开(公告)号:US09286961B1

    公开(公告)日:2016-03-15

    申请号:US14672412

    申请日:2015-03-30

    Applicant: Apple Inc.

    CPC classification number: H03L7/08 G11C7/1093 G11C7/22

    Abstract: A method and apparatus for reducing a number of delay elements used in providing a delayed data strobe signal is disclosed. The method includes determining a number of delay elements of a master delay locked loop (DLL) needed to provide a calibrated delay of a clock signal (i.e. the data strobe). The method also include determining an integer number of half clock periods within the calibrated delay, and determining a second number of delay elements within the calibrated delay. If the integer number of half clock periods within the calibrated delay is zero, a slave DLL may be programmed with the first number of delay elements. However, if the number of half clock periods is non-zero, then a third number of delay elements is calculated by subtracting the second number of delay elements from the first number. Thereafter, the slave DLL is programmed with the third number of delay elements.

    Abstract translation: 公开了一种用于减少用于提供延迟的数据选通信号的延迟元件的数量的方法和装置。 该方法包括确定提供时钟信号(即,数据选通)的校准延迟所需的主延迟锁定环(DLL)的延迟元件的数量。 该方法还包括确定校准延迟内的半个时钟周期的整数,以及确定校准延迟内的第二数量的延迟元件。 如果校准延迟内的半个时钟周期的整数为零,则可以用第一数量的延迟元件对从属DLL进行编程。 然而,如果半个时钟周期的数量是非零,则通过从第一个数字减去第二个延迟元素数来计算第三个延迟元件数。 此后,从动DLL用第三数量的延迟元件编程。

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