公开(公告)号：US20140055788A1

公开(公告)日：2014-02-27

申请号：US14011663

申请日：2013-08-27

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Maria DEN BOEF ,  Arno Jan Bleeker ,  Youri Johannes Laurentius Maria Van Dommelen ,  Mircea Dusa ,  Antoine Gaston Marie Kiers ,  Paul Frank Luehrmann ,  Henricus Petrus Maria Pellemans ,  Maurits Van Der Schaar ,  Cedric Desire Grouwstra ,  Markus Gerardus Martinus Van Kraaij

IPC: G03F7/20

CPC classification number: G01N21/8806 ,  G03F7/70341 ,  G03F7/70633 ,  G03F7/7065 ,  G03F9/7034

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

公开(公告)号：US12276921B2

公开(公告)日：2025-04-15

申请号：US17923913

申请日：2021-04-21

Applicant: ASML Netherlands B.V.

Inventor： Olger Victor Zwier ,  Maurits Van Der Schaar ,  Hilko Dirk Bos ,  Hans Van Der Laan ,  S. M. Masudur Rahman Al Arif ,  Henricus Wilhelmus Maria Van Buel ,  Armand Eugene Albert Koolen ,  Victor Emanuel Calado ,  Kaustuve Bhattacharyya ,  Jin Lian ,  Sebastianus Adrianus Goorden ,  Hui Quan Lim

IPC: G03F7/00

Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.

公开(公告)号：US12204826B2

公开(公告)日：2025-01-21

申请号：US18095515

申请日：2023-01-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Lotte Marloes Willems ,  Kaustuve Bhattacharyya ,  Panagiotis Pieter Bintevinos ,  Guangqing Chen ,  Martin Ebert ,  Pieter Jacob Mathias Hendrik Knelissen ,  Stephen Morgan ,  Maurits Van Der Schaar ,  Leonardus Henricus Marie Verstappen ,  Jen-Shiang Wang ,  Peter Hanzen Wardenier

IPC: G03F7/00 ,  G03F9/00 ,  G06F30/20 ,  G06F111/10

Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.

公开(公告)号：US11698346B2

公开(公告)日：2023-07-11

申请号：US16114629

申请日：2018-08-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Ioana Sorina Barbu ,  Murat Bozkurt ,  Maurits Van Der Schaar ,  Alberto Da Costa Assafrao

IPC: G01N21/88 ,  G03F7/20 ,  G01N21/95 ,  G01N21/47 ,  G01N21/956 ,  H01L21/66 ,  G03F7/00

CPC classification number: G01N21/8806 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/95607 ,  G03F7/705 ,  G03F7/7065 ,  G03F7/70525 ,  G03F7/70616 ,  G03F7/70633 ,  H01L22/12

Abstract: Multilayered product structures are formed on substrates by a combination of patterning steps, physical processing steps and chemical processing steps. An inspection apparatus illuminates a plurality of target structures and captures pupil images representing the angular distribution of radiation scattered by each target structure. The target structures have the same design but are formed at different locations on a substrate and/or on different substrates. Based on a comparison of the images the inspection apparatus infers the presence of process-induced stack variations between the different locations. In one application, the inspection apparatus separately measures overlay performance of the manufacturing process based on dark-field images, combined with previously determined calibration information. The calibration is adjusted for each target, depending on the stack variations inferred from the pupil images.

公开(公告)号：US11580274B2

公开(公告)日：2023-02-14

申请号：US15559759

申请日：2016-03-24

Applicant: ASML Netherlands B.V.

Inventor： Lotte Marloes Willems ,  Kaustuve Bhattacharyya ,  Panagiotis Pieter Bintevinos ,  Guangqing Chen ,  Martin Ebert ,  Pieter Jacob Mathias Hendrik Knelissen ,  Stephen Morgan ,  Maurits Van Der Schaar ,  Leonardus Henricus Marie Verstappen ,  Jen-Shiang Wang ,  Peter Hanzen Wardenier

IPC: G03F7/20 ,  G06F30/20 ,  G03F9/00 ,  G06F111/10

Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.

公开(公告)号：US20230016664A1

公开(公告)日：2023-01-19

申请号：US17873406

申请日：2022-07-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve BHATTACHARYYA ,  Henricus Wilhelmus Maria Van Buel ,  Christophe David Fouquet ,  Hendrik Jan Hidde Smilde ,  Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Johannes Marcus Maria Beltman ,  Andreas Fuchs ,  Omer Abubaker Omer Adam ,  Michael Kubis ,  Martin Jacobus Johan Jak

IPC: G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US11466980B2

公开(公告)日：2022-10-11

申请号：US15649173

申请日：2017-07-13

Applicant: ASML Netherlands B.V

Inventor： Maurits Van Der Schaar ,  Kaustuve Bhattacharyya ,  Hendrik-Jan Hidde Smilde

IPC: H01L21/68 ,  G01B11/27 ,  G03F7/20 ,  G01B11/30 ,  H01L23/544

Abstract: A lithographic process is used to form a plurality of target structures distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprising a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.

公开(公告)号：US20200150547A1

公开(公告)日：2020-05-14

申请号：US16744269

申请日：2020-01-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Ralph Timotheus HUIJGEN ,  Marc Jurian Kea ,  Marcel Theodorus Maria Van Kessel ,  Masashi Ishibashi ,  Chi-Hsiang Fan ,  Hakki Ergün Cekli ,  Youping Zhang ,  Maurits Van Der Schaar ,  Liping Ren

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/956

Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.

公开(公告)号：US10585357B2

公开(公告)日：2020-03-10

申请号：US16063190

申请日：2016-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits Van Der Schaar ,  Youping Zhang ,  Hua Xu

IPC: G01B11/14 ,  G03F7/20 ,  G03F9/00

Abstract: A target structure, wherein the target structure is configured to be measured with a metrology tool that has a diffraction threshold; the target structure including: one or more patterns supported on a substrate, the one or more patterns being periodic with a first period in a first direction and periodic with a second period in a second direction, wherein the first direction and second direction are different and parallel to the substrate, and the first period is equal to or greater than the diffraction threshold and the second period is less than the diffraction threshold.

公开(公告)号：US10481506B2

公开(公告)日：2019-11-19

申请号：US15967861

申请日：2018-05-01

Applicant: ASML Netherlands B.V.

Inventor： Murat Bozkurt ,  Maurits Van Der Schaar ,  Patrick Warnaar ,  Martin Jacobus Johan Jak ,  Mohammadreza Hajiahmadi ,  Grzegorz Grzela ,  Lukasz Jerzy Macht

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956 ,  G01N21/95

Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As′) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.