公开(公告)号：US10935799B2

公开(公告)日：2021-03-02

申请号：US16168185

申请日：2018-10-23

Applicant: APPLIED Materials, Inc.

Inventor： Rutger Meyer Timmerman Thijssen ,  Ludovic Godet ,  Morgan Evans ,  Joseph C. Olson

IPC: G02B5/18 ,  G02B27/09 ,  G02B27/01

Abstract: A method of forming an optical grating component. The method may include providing a substrate, the substrate comprising an underlayer and a hard mask layer, disposed on the underlayer. The method may include patterning the hard mask layer to define a grating field and etching the underlayer within the grating field to define a variable height of the underlayer along a first direction, the first direction being parallel to a plane of the substrate. The method may include forming an optical grating within the grating field using an angled ion etch, the optical grating comprising a plurality of angled structures, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the plurality of angled structures define a variable depth along the first direction, based upon the variable height of the underlayer.

公开(公告)号：US10823888B1

公开(公告)日：2020-11-03

申请号：US16681260

申请日：2019-11-12

Applicant: APPLIED Materials, Inc.

Inventor： Morgan Evans ,  Rutger Meyer Timmerman Thijssen ,  Joseph C. Olson

IPC: G02B5/18 ,  B29D11/00 ,  G02B6/02

Abstract: Methods of producing gratings with trenches having variable height are provided. In one example, a method of forming a diffracted optical element may include providing an optical grating layer over a substrate, patterning a hardmask over the optical grating layer, and forming a sacrificial layer over the hardmask, the sacrificial layer having a non-uniform height measured from a top surface of the optical grating layer. The method may further include etching a plurality of angled trenches into the optical grating layer to form an optical grating, wherein a first depth of a first trench of the plurality of trenches is different than a second depth of a second trench of the plurality of trenches.

公开(公告)号：US10775158B2

公开(公告)日：2020-09-15

申请号：US16240301

申请日：2019-01-04

Applicant: APPLIED Materials, Inc.

Inventor： Joseph C. Olson ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Morgan Evans

IPC: G01B11/22 ,  H01L21/306 ,  C03C15/00 ,  G02B5/18

Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optical grating layer, and forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled trenches disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the optical grating layer. The method may further include delivering light from a light source into the optical grating layer, and measuring at least one of: an undiffracted portion of the light exiting the optical grating layer, and a diffracted portion of the light exiting the optical grating layer.

公开(公告)号：US20200158495A1

公开(公告)日：2020-05-21

申请号：US16240301

申请日：2019-01-04

Applicant: APPLIED Materials, Inc.

Inventor： Joseph C. Olson ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Morgan Evans

IPC: G01B11/22 ,  G02B5/18 ,  C03C15/00

Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optical grating layer, and forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled trenches disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the optical grating layer. The method may further include delivering light from a light source into the optical grating layer, and measuring at least one of: an undiffracted portion of the light exiting the optical grating layer, and a diffracted portion of the light exiting the optical grating layer.

公开(公告)号：US10607847B1

公开(公告)日：2020-03-31

申请号：US16207932

申请日：2018-12-03

Applicant: APPLIED Materials, Inc.

Inventor： Min Gyu Sung ,  Sony Varghese ,  Anthony Renau ,  Morgan Evans ,  Joseph C. Olson

IPC: H01L21/3065 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8234 ,  H01L29/423

Abstract: A method of forming a three-dimensional transistor device. The method may include providing a fin array on a substrate, the fin array comprising a plurality of fin structures, formed from a monocrystalline semiconductor, and disposed subjacent to a hard mask layer. The method may include directing angled ions at the fin array, wherein the angled ions form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The angled ions may etch the plurality of fin structures to form a stack of isolated nanowires, within a given fin structure.

公开(公告)号：US10302826B1

公开(公告)日：2019-05-28

申请号：US15993135

申请日：2018-05-30

Applicant: Applied Materials, Inc.

Inventor： Rutger Meyer Timmerman Thijssen ,  Morgan Evans ,  Joseph C. Olson

IPC: G02B5/18 ,  H01J37/305 ,  H01J37/20

Abstract: Embodiments described herein relate to methods of forming gratings with different slant angles on a substrate and forming gratings with different slant angles on successive substrates using angled etch systems. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material. The substrates are rotated about an axis of the platen resulting in rotation angles ϕ between the ion beam and a surface normal of the gratings. The gratings have slant angles ϑ′ relative to the surface normal of the substrates. The rotation angles ϕ selected by an equation ϕ=cos−1 (tan(ϑ′)/tan(ϑ)).

公开(公告)号：US20250069850A1

公开(公告)日：2025-02-27

申请号：US18236711

申请日：2023-08-22

Applicant: Applied Materials, Inc.

Inventor： Daniel Distaso ,  Thomas Soldi ,  Joseph C. Olson

IPC: H01J37/317 ,  H01J37/08 ,  H01L21/66

Abstract: A processing system that includes an ion source to direct an ion beam at a workpiece, and an angle measurement system, is disclosed. The angle measurement system includes a current measurement device, such as one or more Faraday sensors, that may be moved in at least two orthogonal directions. The current measurement device scans in a first direction, seeking the largest current measurement. The current measurement device then moves to a second position in the second direction and repeats the scanning procedure. Based on data collected at two different locations in the second direction, the angle of incidence of the incoming ion beam may be determined.

公开(公告)号：US20240339287A1

公开(公告)日：2024-10-10

申请号：US18131271

申请日：2023-04-05

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Nirbhav Singh Chopra ,  Peter F. Kurunczi ,  Anthony Renau ,  Joseph C. Olson ,  Frank Sinclair

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J37/12 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/1207 ,  H01J2237/2505

Abstract: An apparatus may include an electrodynamic mass analysis (EDMA) assembly disposed downstream from the convergent ion beam assembly. The EDMA assembly may include a first stage, comprising a first upper electrode, disposed above a beam axis, and a first lower electrode, disposed below the beam axis, opposite the first upper electrode. The EDMA assembly may also include a second stage, disposed downstream of the first stage and comprising a second upper electrode, disposed above the beam axis, and a second lower electrode, disposed below the beam axis. The EDMA assembly may further include a deflection assembly, disposed between the first stage and the second stage, the deflection assembly comprising a blocker, disposed along the beam axis, an upper deflection electrode, disposed on a first side of the blocker, and a lower deflection electrode, disposed on a second side of the blocker.

公开(公告)号：US12106925B2

公开(公告)日：2024-10-01

申请号：US17560632

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Klaus Becker ,  Joseph C. Olson ,  Tseh-Jen Hsieh ,  Morgan Patrick Dehnel ,  Anand Mathai George

IPC: H01J27/18 ,  H01J27/02

CPC classification number: H01J27/028 ,  H01J27/18

Abstract: An apparatus may include a cyclotron to receive an ion beam as an incident ion beam at an initial energy, and output the ion beam as an accelerated ion beam at an accelerated ion energy. The apparatus may further include an RF source to output an RF power signal to the cyclotron chamber, the RF power source comprising a variable power amplifier, and a movable stripper, translatable to intercept the ion beam within the cyclotron at a continuum of different positions.

公开(公告)号：US20230287561A1

公开(公告)日：2023-09-14

申请号：US17694028

申请日：2022-03-14

Applicant: Applied Materials, Inc.

Inventor： Stanislav S. Todorov ,  Robert J. Mitchell ,  Joseph C. Olson ,  Frank Sinclair

IPC: C23C14/48 ,  C23C14/50

CPC classification number: C23C14/48 ,  C23C14/505

Abstract: A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The spinning disk rotates about a central axis. The spinning disk is also translated linearly in a directional perpendicular to the central axis. The spot ion beam strikes the spinning disk at a distance from the central axis, referred to as the radius of impact. The rotation rate and the scan velocity may both vary inversely with the radius of impact.