METHOD FOR PRODUCING A PARTICLE-ARRANGED STRUCTURE
    41.
    发明申请
    METHOD FOR PRODUCING A PARTICLE-ARRANGED STRUCTURE 审中-公开
    生产颗粒结构的方法

    公开(公告)号:US20100183866A1

    公开(公告)日:2010-07-22

    申请号:US12687486

    申请日:2010-01-14

    CPC classification number: B05D1/005 H01L51/5262 Y10T428/25

    Abstract: The present invention provides a method for easily producing a particle-arranged structure. In the structure produced by the method, particles are regularly arranged. The method of the present invention comprises: preparing a dispersion comprising a solvent, a polymerizable compound dissolved in the solvent and particles insoluble and dispersed uniformly in the solvent; spin-coating the dispersion on a substrate so as to arrange the particles in the liquid phase of the dispersion; and then curing the polymerizable compound.

    Abstract translation: 本发明提供一种容易制造颗粒排列结构的方法。 在通过该方法制造的结构中,定期排列颗粒。 本发明的方法包括:制备包含溶剂,溶解在溶剂中的可聚合化合物和均匀分散在溶剂中的颗粒的分散体; 将分散体旋涂在基材上,以将颗粒排列在分散体的液相中; 然后固化可聚合化合物。

    SOLAR CELL AND METHOD FOR MANUFACTURING METAL ELECTRODE LAYER TO BE USED IN THE SOLAR CELL
    42.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING METAL ELECTRODE LAYER TO BE USED IN THE SOLAR CELL 审中-公开
    用于制造在太阳能电池中使用的金属电极层的太阳能电池和方法

    公开(公告)号:US20100175749A1

    公开(公告)日:2010-07-15

    申请号:US12441036

    申请日:2009-01-29

    Abstract: A solar cell includes: a first electrode layer formed on a substrate; a generating layer formed on the first electrode layer; and a second electrode layer formed on the generating layer, at least one of the first electrode layer and the second electrode layer being a metal electrode layer having optical transparency, the metal electrode layer having a plurality of openings that penetrate through the metal electrode layer. The metal electrode layer includes metal parts, any two metal parts of the metal electrode layer continues to each other without a cut portion, the metal electrode layer has a film thickness in the range of 10 nm to 200 nm, and sizes of the openings are equal to or smaller than ½ of the wavelength of light to be used for generating electricity.

    Abstract translation: 太阳能电池包括:形成在基板上的第一电极层; 形成在所述第一电极层上的发生层; 以及形成在所述发生层上的第二电极层,所述第一电极层和所述第二电极层中的至少一个是具有透光性的金属电极层,所述金属电极层具有贯穿所述金属电极层的多个开口。 金属电极层包括金属部件,金属电极层的任意两个金属部分彼此连续而没有切割部分,金属电极层的膜厚度在10nm至200nm范围内,并且开口尺寸为 等于或小于用于发电的光的波长的1/2。

    DISPLAYING DEVICE AND LIGHTING DEVICE EMPLOYING ORGANIC ELECTROLUMINESCENCE ELEMENT
    43.
    发明申请
    DISPLAYING DEVICE AND LIGHTING DEVICE EMPLOYING ORGANIC ELECTROLUMINESCENCE ELEMENT 有权
    显示设备和照明设备使用有机电致发光元件

    公开(公告)号:US20090236962A1

    公开(公告)日:2009-09-24

    申请号:US12392691

    申请日:2009-02-25

    CPC classification number: H01L51/5203 H01L51/5234 H01L2251/5315

    Abstract: The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.

    Abstract translation: 本发明提供一种高效率的有机EL显示器和照明装置。 有机EL显示器包括基板,像素驱动电路单元和在基板上以矩阵形式布置的像素。 像素包括发光部分,并且发光部分由放置在基板附近的第一电极,远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。 第二电极具有厚度为10nm至200nm的金属电极层,并且金属电极层包括金属部分和贯穿该层的多个开口。 金属部件是无缝的,并且由连续连接的金属形成,其中任何点之间没有断裂。 开口的平均开口直径为10nm〜780nm,并且周期性地布置,使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。

    Resistor and production method therefor
    44.
    发明授权
    Resistor and production method therefor 失效
    电阻及其制作方法

    公开(公告)号:US07057490B2

    公开(公告)日:2006-06-06

    申请号:US10362709

    申请日:2001-08-30

    CPC classification number: H01C17/006 H01C1/142 H01C17/288

    Abstract: A resistor having reliability in electrical connection between an upper surface electrode and a side face electrode, and in bonding strength between a first thin film and a second thin film is provided. The resistor includes upper surface electrodes formed on a main surface a substrate and side face electrodes disposed to side faces of the substrate and connected electrically to the pair of upper surface electrodes, respectively. The upper surface electrode includes a first upper surface electrode layer and a bonding layer overlying the first upper surface electrode layer. The side face electrode includes a first thin film disposed to a side face of the substrate, a second thin film composed of copper-base alloy film and connected electrically to the first thin film, a first plating film formed by nickel plating for covering the second thin film, and a second plating film covering the first plating film.

    Abstract translation: 提供了一种在上表面电极和侧面电极之间具有电连接的可靠性以及第一薄膜和第二薄膜之间的接合强度的电阻器。 电阻器包括形成在基板的主表面上的上表面电极和设置在基板的侧面并分别与一对上表面电极电连接的侧面电极。 上表面电极包括第一上表面电极层和覆盖第一上表面电极层的接合层。 侧面电极包括设置在基板的侧面的第一薄膜,由铜基合金膜构成的与第一薄膜电连接的第二薄膜,通过镀镍形成的第一镀膜,用于覆盖第二薄膜 薄膜和覆盖第一镀膜的第二镀膜。

    Angular-velocity sensor
    45.
    发明申请
    Angular-velocity sensor 有权
    角速度传感器

    公开(公告)号:US20050029606A1

    公开(公告)日:2005-02-10

    申请号:US10495926

    申请日:2003-08-06

    CPC classification number: G01C19/5607

    Abstract: An angular velocity sensor includes a tuning-fork-shaped substrate (1), drivers (110) that are provided on the arms forming a tuning fork and vibrate the arms; monitors (150) for detecting vibrations generated by the drivers (110); and detectors (120) for detecting displacement of vibrations made in application of an angular velocity. The drivers (110), the monitors (150), and the detectors (120) are made of a lower electrode layer, a piezoelectric thin film, and an upper electrode layer formed on the arms. The outer peripheral edge of the piezoelectric thin film is shaped like a step having at least one flat portion. The flat portion along the outer peripheral edge has no upper electrode layer formed thereon. This structure prevents short circuits between the lower electrode layer and the upper electrode layer.

    Abstract translation: 角速度传感器包括音叉形基板(1),驱动器(110),其设置在形成音叉的臂上并使臂振动; 监视器(150),用于检测由驾驶员(110)产生的振动; 以及用于检测施加角速度的振动的位移的检测器(120)。 驱动器(110),监视器(150)和检测器(120)由形成在臂上的下电极层,压电薄膜和上电极层制成。 压电薄膜的外周缘成形为具有至少一个平坦部分的台阶。 沿着外周边缘的平坦部分没有形成上电极层。 这种结构防止了下电极层和上电极层之间的短路。

    Power supply apparatus
    46.
    发明授权
    Power supply apparatus 有权
    电源设备

    公开(公告)号:US06826060B2

    公开(公告)日:2004-11-30

    申请号:US10258370

    申请日:2003-04-03

    CPC classification number: H02M1/32 H02M3/33507

    Abstract: In a power supply apparatus having voltage doubler rectifier circuit (5) connected to secondary winding (1B) of transformer (1), diode (13) is connected between transistor (3) and primary winding (1A) of transformer (1). By detecting an AC voltage at a junction point between primary winding (1A) of transformer (1) and diode (13) thereby performing over-voltage protection, the difference between the maximum operating voltage and the no-load operating voltage is decreased and the voltage during no-load operation is lowered and thus small-sized power supply apparatus and peripheral equipment can be provided.

    Abstract translation: 在具有连接到变压器(1)的次级绕组(1B)的倍压整流电路(5)的电源装置中,二极管(13)连接在变压器(1)的晶体管(3)和初级绕组(1A)之间。 通过检测变压器(1)的初级绕组(1A)和二极管(13)之间的接点处的AC电压,由此进行过电压保护,最大工作电压和空载工作电压之间的差减小,并且 空载时的电压降低,能够提供小型电源装置和周边设备。

    Tuning circuit
    47.
    发明授权
    Tuning circuit 失效
    调谐电路

    公开(公告)号:US6081157A

    公开(公告)日:2000-06-27

    申请号:US860402

    申请日:1997-06-23

    Abstract: A tuning circuit which has a wide tuning bandwidth. The tuning bandwidth of the tuning frequency can be easily changed. The tuning circuit 1 is composed of two cascade-connected tuning amplifier sections 2 and 3. Each of the sections 2 and 3 is provided with cascade-connected phase-shifting circuits 10C and 30C, a voltage dividing circuit 60, and an adding circuit composed of a feedback resistor 70 and an input resistor 74. Prescribed tuning operation is performed by shifting the phase of a prescribed frequency by 360.degree. by means of the phase shifting circuits 10C and 30C and setting the open loop gain of a feedback loop at less than 1 when the output of the voltage dividing circuit 60 is feedback. The resistance ratio between the feedback resistor 70 and input resistor 74 of each tuning amplifier section is adjusted in order that the maximum damping of each tuning amplifier section becomes smaller and the tuning bandwidth of each amplifier section becomes wider. Therefore, since the tuning amplifier sections are cascade-connected, the maximum damping is increased and the tuning bandwidth is widened as a whole.

    Abstract translation: PCT No.PCT / JP96 / 00026 Sec。 371日期:1997年6月23日 102(e)日期1997年6月23日PCT 1996年1月11日PCT PCT。 公开号WO96 / 21970 日期1996年7月18日具有宽调谐带宽的调谐电路。 调谐频率的调谐带宽可以很容易地改变。 调谐电路1由两个级联连接的调谐放大器部分2和3组成。每个部分2和3都设有级联的移相电路10C和30C,分压电路60和加法电路 反馈电阻器70和输入电阻器74.通过移相电路10C和30C将规定频率的相位移位360度,并将反馈回路的开环增益设定为小于等于 1,当分压电路60的输出反馈时。 调整每个调谐放大器部分的反馈电阻器70和输入电阻器74之间的电阻比,使得每个调谐放大器部分的最大阻尼变小,并且每个放大器部分的调谐带宽变宽。 因此,由于调谐放大器部分级联连接,所以最大阻尼增加,调谐带宽整体变宽。

    LC element manufacturing method
    48.
    发明授权
    LC element manufacturing method 失效
    LC元件制造方法

    公开(公告)号:US5846845A

    公开(公告)日:1998-12-08

    申请号:US476276

    申请日:1995-06-07

    Abstract: An LC element, semiconductor device and a manufacturing method thereof whereby a channel 22 is formed by applying a voltage to a gate electrode 10 having a predetermined shape formed on a p-Si substrate 30 via an insulation layer 26, whereby a connection is formed between a first diffusion region 12 and a second diffusion region 14 formed at separated positions near the surface of the p-Si substrate 30; both the channel 22 gate electrode 10 function as inductors, and between these a distributed constant type capacitor is formed, and possessing excellent attenuation characteristics over a wide band. This LC element and semiconductor device can be easily manufactured by using MOS manufacturing technology; in the case of manufacturing as a portion of a semiconductor substrate, component assembly work in subsequent processing can be omitted. Also these can be formed as a portion of an IC or LSI device.

    Abstract translation: 一种LC元件,半导体器件及其制造方法,通过经由绝缘层26向在p-Si衬底30上形成的具有预定形状的栅电极10施加电压而形成沟道22,由此在 形成在p-Si衬底30的表面附近的分离位置处的第一扩散区域12和第二扩散区域14; 沟道22栅电极10都用作电感器,并且形成分布常数型电容器,并且在宽带上具有优异的衰减特性。 该LC元件和半导体器件可以通过使用MOS制造技术容易地制造; 在制造半导体基板的一部分的情况下,可以省略后续处理中的部件组装工作。 而且这些也可以形成为IC或LSI器件的一部分。

    Process of emitting highly spin-polarized electron beam and
semiconductor device therefor

    公开(公告)号:US5723871A

    公开(公告)日:1998-03-03

    申请号:US214319

    申请日:1994-03-17

    CPC classification number: H01J1/34 H01J3/021 H01J2201/3423 H01J2203/0296

    Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

    Rotary structure
    50.
    发明授权
    Rotary structure 失效
    旋转结构

    公开(公告)号:US4993851A

    公开(公告)日:1991-02-19

    申请号:US544038

    申请日:1990-06-26

    CPC classification number: F16C25/083 F16C19/16 F16C19/18

    Abstract: A rotary structure adapted to be used as a spindle unit for a miniature motor or miniature rotor or as a tape guide roller for a VTR. In the structure of the rotary mechanism, instead of a conventional expensive radial ball bearings, a substantially V-shaped groove is formed in the shaft itself so as to hold balls between this groove and the tapered surface or concave spherical ball receiving surface of an outer race provided around the groove.

    Abstract translation: 一种旋转结构,适于用作微型电动机或微型转子的主轴单元或用于VTR的带导向辊。 在旋转机构的结构中,代替常规的昂贵的径向球轴承,在轴本身中形成大致V形的凹槽,以便将球保持在该凹槽与锥形表面之间或凹形的球形球接收表面 围绕沟槽提供的种族

Patent Agency Ranking