Abstract:
Disclosed are a graphene-ceramic hybrid coating layer formed from a graphene-ceramic hybrid sol solution including graphene (RGO: reduced graphene oxide) and a ceramic sol, wherein the graphene content in the graphene-ceramic hybrid coating layer is about 0.001 wt % to about 1.8 wt % based on the total weight of the graphene-ceramic hybrid coating layer, and a method for preparing the same.
Abstract:
A method for preparing graphene nanoplate (GNP) is provided and includes preparing expanded graphite (EG) and exfoliating, grinding, or cracking the expanded graphite to crack the EG induced by gas-phase-collision. A graphene nanoplate paste and a conductive coating layer formed of the graphene nanoplate paste are provided and are prepared by the method for preparing graphene nanoplate.
Abstract:
An embodiment of the present invention relates to a plasma-resistant glass, and a manufacturing method therefor, and the present invention is intended to provide a plasma-resistant glass having improved plasma resistance properties, and a manufacturing method therefor. To this end, the present invention provides a plasma-resistant glass including SiO2 in an amount of 40 to 75 mol %, Al2O3 in an amount of 5 to 20 mol %, MgO in an amount of 10 to 40 mol %, and MgF2 in an amount of 0.01 to 10 mol %, and a manufacturing method therefor.
Abstract:
Proposed is a manufacturing method of a high-quality β-Ga2O3 thin film using a high-quality β-Ga2O3 thin film manufacturing apparatus based on halide vapor phase epitaxy (HVPE) growth. The apparatus includes a reaction gas generating unit in which a chlorine-based gas and Ga in a source zone react to generate GaClx, a dopant gas supply unit, an additional chlorine-based gas supply unit for supplying an additional chlorine-based gas in a source tube, oxygen-based gas supply units, and a susceptor unit supporting a substrate on which a Ga2O3 thin film is to be formed. During the epitaxial growth, the additional hydrogen chloride (HCl) gas is supplied to reduce the pre-reaction between precursors, and a movement distance to the susceptor can is increased to increase growth rate and growth speed to control the crystallinity. Thus, high-quality epitaxial growth and a high production yield can be achieved.
Abstract:
The present disclosure relates to a fusion protein of Z-domain and calsequestrin having improved reactivity, stability, and antibody recovery, and a method of isolating and purifying antibodies using the same. Specifically, the present disclosure relates to: a nucleic acid encoding a fusion protein of Z-domain and calsequestrin having improved reactivity, stability, and antibody recovery; a recombinant expression vector including the nucleic acid; a host cell transformed with the recombinant expression vector; and a method of isolating and purifying antibodies by using the fusion protein of Z-domain and calsequestrin having improved reactivity, stability, antibody recovery, and purity.
Abstract:
Provided is a complex patterning device. The complex patterning device includes a patterning module, on which a master substrate including a master pattern that contacts and is separated from a target substrate and which forms a plurality of target patterns having a reverse image of the master pattern on the target substrate by applying a pressure onto the target substrate, and a punching module including a punching mold that contacts and is separated from the target substrate, in which the plurality of target patterns are formed, and which divides at least any one of the plurality of target patterns by applying a pressure onto the target substrate.
Abstract:
A method of manufacturing a ceramic dielectric, including: heat-treating a barium precursor or a strontium precursor, a titanium precursor, and a donor element precursor to obtain a conducting or semiconducting oxide, preparing a mixture including the conducting or semiconducting oxide and a liquid-phase acceptor element precursor, and sintering the mixture to form a ceramic dielectric, wherein the ceramic dielectric includes a plurality of grains and a grain boundary between adjacent grains, and wherein the plurality of grains including an insulating oxide comprising an acceptor element derived from the acceptor element precursor.
Abstract:
The present invention relates to a transdermal nano-carrier and, more specifically, to a nano-carrier having a chitosan-based nano-sponge structure. According to the present invention, as a nano-carrier having enhanced transdermal delivery on the basis of a complex containing chitosan is provided, it is possible to effectively deliver drugs, cosmetic materials, etc. into the skin.
Abstract:
The present disclosure relates to a method for preparing a ceramic thermal barrier coating layer including (a) preparing a first suspension in which first oxide particles for thermal barrier coating are dispersed and a second suspension in which second oxide particles for thermal barrier coating are dispersed, respectively; (b) forming a first coating layer on a base material by suspension plasma spraying (SPS) using the first suspension; (c) forming a buffer layer on the first coating layer by the suspension plasma spraying using a mixed suspension of the first suspension and the second suspension; and (d) forming a second coating layer on the buffer layer by the suspension plasma spraying using the second suspension.
Abstract:
An interdigitated electrode patterned multi-layered piezoelectric laminate structure is provided, which comprises: N vertically stacked piezoelectric stacks (N is the integer of 2 or above); wherein the each piezoelectric stack comprises: a piezoelectric sheet; a top electrode pattern on a top of the piezoelectric sheet; and a bottom electrode pattern on a bottom of the piezoelectric sheet, wherein each of the top and bottom electrode patterns has first and second sub-electrode patterns, wherein the first and second sub-electrode patterns are electrically insulated from each other, wherein the first and second sub-electrode patterns are horizontally interdigitated with each other, wherein the first sub-electrode patterns of the top and bottom electrode patterns vertically overlap with each other, wherein the second sub-electrode patterns of the top and bottom electrode patterns vertically overlap with each other, wherein the bottom electrode of the Nth piezoelectric stack is the top electrode of the N-1th piezoelectric stack.