MEMS REED SWITCH DEVICE
    43.
    发明申请
    MEMS REED SWITCH DEVICE 审中-公开
    MEMS REED开关器件

    公开(公告)号:US20170062159A1

    公开(公告)日:2017-03-02

    申请号:US15237120

    申请日:2016-08-15

    Inventor: Benedikt ZEYEN

    CPC classification number: H01H36/0013 H01H2036/0093

    Abstract: A MEMS device, having two flexible, permeable members which are manufactured to have sub-millimeter dimensions using MEMS fabrication procedures. The flexible, permeable members may form a reed switch, which closes an electrical connection in the presence of a magnetic field, and opens the connection otherwise. The MEMS reed switch device may be made using a three-wafer architecture of a lid wafer, a device wafer, and a lower, supporting wafer.

    Abstract translation: MEMS器件具有两个柔性的可渗透构件,其制造成具有使用MEMS制造程序的亚毫米尺寸。 柔性的可渗透构件可以形成簧片开关,其在存在磁场的情况下闭合电连接,否则打开连接。 可以使用盖晶片,器件晶片和下支撑晶片的三晶片架构来制造MEMS簧片开关器件。

    Anodic bonding of dielectric substrates
    44.
    发明授权
    Anodic bonding of dielectric substrates 有权
    介电基片的阳极结合

    公开(公告)号:US09533877B2

    公开(公告)日:2017-01-03

    申请号:US15098353

    申请日:2016-04-14

    Inventor: Benedikt Zeyen

    Abstract: A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.

    Abstract translation: 具有图案化电介质阻挡层和可氧化金属层的第一富离子电介质基片阳极结合到第二富离子电介质基片上。 为了结合基板,可氧化的金属层被氧化。 电介质阻挡层可以抑制这些离子迁移到粘结线,否则可能会损害粘结强度。 因此,当接合两个基板时,在晶片之间保持牢固的结合。

    THERMOCOMPRESSION BONDING WITH RAISED FEATURE
    45.
    发明申请
    THERMOCOMPRESSION BONDING WITH RAISED FEATURE 审中-公开
    热电偶与附加功能结合

    公开(公告)号:US20160343684A1

    公开(公告)日:2016-11-24

    申请号:US15149217

    申请日:2016-05-09

    CPC classification number: B81C1/00269 B81C2203/0118 B81C2203/037

    Abstract: A method for bonding two substrates is described, comprising providing a first and a second silicon substrate, providing a raised feature on at least one of the first and the second silicon substrate, forming a layer of gold on the first and the second silicon substrates, and pressing the first substrate against the second substrate, to form a thermocompression bond around the raised feature. The high initial pressure caused by the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature, while the complete embedding of the raised feature into the opposing surface allows for the two bonding planes to come into contact. This large contact area provides for high strength.

    Abstract translation: 描述了用于接合两个基板的方法,包括提供第一和第二硅基板,在第一和第二硅基板中的至少一个上提供凸起特征,在第一和第二硅基板上形成金层, 并且将第一基板压靠在第二基板上,以在凸起特征周围形成热压接。 由相对表面上的凸起特征引起的高初始压力提供密封接合而不破坏凸起特征,而将凸起特征完全嵌入到相对表面中允许两个结合面接触。 这种大的接触面积提供高强度。

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