公开(公告)号：US09156679B1

公开(公告)日：2015-10-13

申请号：US14326406

申请日：2014-07-08

Applicant: Innovative Micro Technology

Inventor： Benedikt Zeyen ,  Jeffery F. Summers

IPC: H01L31/00 ,  H01L21/00 ,  B81B7/00 ,  B81C1/00 ,  H01L23/04 ,  H01L31/0203 ,  H01L33/48 ,  H01L31/18

CPC classification number: H01L31/18 ,  B81B2201/047 ,  B81B2207/093 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/031 ,  H01L31/0203 ,  H01L33/0079 ,  H02S40/44

Abstract: A bonding technology is disclosed that can form an anodic, conductive bond between two optically transparent substrates. The anodic bond may be accompanied by a Second bond, for example a metal alloy, solder, eutectic and polymer bond. The two bonds may be used for the same or a different purpose, and may be selected for the following attributes: hermeticity, electrical conductivity, low RF loss, high adhesive strength, leak resistance, thermal conductivity. The attributes for each bonding technology may be the same, or they may be different.

Abstract translation: 公开了可以在两个光学透明基板之间形成阳极导电结合的接合技术。 阳极键可以伴随有第二键，例如金属合金，焊料，共晶和聚合物键。 两个键可以用于相同或不同的目的，并且可以选择以下属性：气密性，导电性，低RF损耗，高粘合强度，耐漏电性，导热性。 每种粘合技术的属性可能相同，或者它们可能不同。

公开(公告)号：US09315375B2

公开(公告)日：2016-04-19

申请号：US14142712

申请日：2013-12-27

Applicant: Innovative Micro Technology

Inventor： Benedikt Zeyen ,  Jeffery F. Summers

IPC: B81B1/00 ,  B32B37/00 ,  B81C1/00 ,  B81B7/00 ,  B32B37/12

CPC classification number: B81B1/00 ,  B32B37/0084 ,  B32B2037/1269 ,  B81B7/00 ,  B81C1/00269 ,  B81C2203/019 ,  Y10T428/13 ,  Y10T428/24851 ,  Y10T428/24975 ,  Y10T428/31536

Abstract: A bonding technology is disclosed that can form an anodic, conductive bond between two optically transparent substrates. The anodic bond may be accompanied by a metal alloy, solder, eutectic and polymer bond. The first anodic bond may provide one attribute such as hermeticity, whereas the second bond may provide another attribute, such as electrical conductivity.

Abstract translation: 公开了可以在两个光学透明基板之间形成阳极导电结合的接合技术。 阳极键可以伴随有金属合金，焊料，共晶和聚合物键。 第一阳极键可以提供诸如气密性的一个属性，而第二键可以提供另一个属性，例如导电性。

公开(公告)号：US09388037B2

公开(公告)日：2016-07-12

申请号：US14158829

申请日：2014-01-19

Applicant: Innovative Micro Technology

Inventor： Benedikt Zeyen ,  Jeffery F. Summers

IPC: B32B15/04 ,  B32B17/06 ,  B81B1/00 ,  B32B37/00 ,  B81C1/00 ,  B81B7/00 ,  B32B37/12

CPC classification number: B81B1/00 ,  B32B37/0084 ,  B32B2037/1269 ,  B81B7/00 ,  B81C1/00269 ,  B81C2203/019 ,  Y10T428/13 ,  Y10T428/24851 ,  Y10T428/24975 ,  Y10T428/31536

Abstract: A bonding technology is disclosed that can form an anodic, conductive bond between two optically transparent substrates. The anodic bond may be accompanied by a metal alloy, solder, eutectic and polymer bond. The first anodic bond may provide one attribute such as hermeticity, whereas the second bond may provide another attribute, such as electrical conductivity.

Abstract translation: 公开了可以在两个光学透明基板之间形成阳极导电结合的接合技术。 阳极键可以伴随有金属合金，焊料，共晶和聚合物键。 第一阳极键可以提供诸如气密性的一个属性，而第二键可以提供另一个属性，例如导电性。

公开(公告)号：US09950923B1

公开(公告)日：2018-04-24

申请号：US15485182

申请日：2017-04-11

Applicant: Innovative Micro Technology

Inventor： Christopher S. Gudeman ,  Jeffery F. Summers

IPC: H01L23/00 ,  B81C1/00 ,  B81B3/00 ,  H01L21/768 ,  H01L21/762 ,  H01L23/48

CPC classification number: H01L21/76879 ,  H01L21/76232 ,  H01L21/76877 ,  H01L23/481

Abstract: Described herein is a method and structure for fabricating vias in a semiconductor substrate. The semiconductor substrate is first doped to make it mildly conducting, via holes are formed therein, and a conductive material is deposited in the holes. Using the moderate conductivity of the substrate, the conductive material may be plated into the holes.

公开(公告)号：US09493877B1

公开(公告)日：2016-11-15

申请号：US15144735

申请日：2016-05-02

Applicant: Innovative Micro Technology

Inventor： John Harley ,  Jeffery F. Summers ,  Tao Gilbert

IPC: C23F1/02 ,  C23F4/00 ,  C23F1/12 ,  H01J37/32 ,  C23F1/16 ,  C23F1/38 ,  C23F1/44 ,  B81C1/00 ,  G03F7/004

CPC classification number: C23F1/02 ,  B81C1/00531 ,  B81C1/00539 ,  B81C2201/0132 ,  B81C2201/0133 ,  C23F1/16 ,  C23F1/38 ,  C23F1/44 ,  C23F4/00 ,  G03F7/0041 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02244 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method for creating small features in an Al/Ag/Ti multilayer stack is disclosed. The method uses a combination of wet and dry etching techniques to anisotropically etch the layers.

Abstract translation: 公开了一种用于在Al / Ag / Ti多层叠层中形成小特征的方法。 该方法使用湿式和干式蚀刻技术的组合来各向异性地蚀刻层。