DUAL SUBSTRATE ELECTROSTATIC MEMS SWITCH WITH MULTIPLE HINGES AND METHOD OF MANUFACTURE
    1.
    发明申请
    DUAL SUBSTRATE ELECTROSTATIC MEMS SWITCH WITH MULTIPLE HINGES AND METHOD OF MANUFACTURE 有权
    具有多个铰链的双基板静电MEMS开关及其制造方法

    公开(公告)号:US20160268084A1

    公开(公告)日:2016-09-15

    申请号:US15060630

    申请日:2016-03-04

    Abstract: Systems and methods for forming an electrostatic MEMS switch include forming a movable cantilevered beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate. The cantilevered beam may be formed by etching the perimeter shape in the device layer of an SOI substrate. An additional void may be formed in the movable beam such that it bends about an additional hinge line as a result of the additional void. This may give the beam and switch advantageous kinematic characteristics.

    Abstract translation: 用于形成静电MEMS开关的系统和方法包括在第一基板上形成可移动的悬臂梁,在第二基板上形成电触点,并且使用气密密封来连接两个基板。 可以通过形成穿过第二基板的厚度的通孔来进行对静电MEMS开关的电接入。 可以通过蚀刻SOI衬底的器件层中的周边形状来形成悬臂梁。 可移动梁中可能形成一个额外的空隙,使其由于附加的空隙而围绕另外的铰链线弯曲。 这可以给出光束并切换有利的运动特性。

    THERMOCOMPRESSION BONDING WITH RAISED FEATURE
    2.
    发明申请
    THERMOCOMPRESSION BONDING WITH RAISED FEATURE 审中-公开
    热电偶与附加功能结合

    公开(公告)号:US20160343684A1

    公开(公告)日:2016-11-24

    申请号:US15149217

    申请日:2016-05-09

    CPC classification number: B81C1/00269 B81C2203/0118 B81C2203/037

    Abstract: A method for bonding two substrates is described, comprising providing a first and a second silicon substrate, providing a raised feature on at least one of the first and the second silicon substrate, forming a layer of gold on the first and the second silicon substrates, and pressing the first substrate against the second substrate, to form a thermocompression bond around the raised feature. The high initial pressure caused by the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature, while the complete embedding of the raised feature into the opposing surface allows for the two bonding planes to come into contact. This large contact area provides for high strength.

    Abstract translation: 描述了用于接合两个基板的方法,包括提供第一和第二硅基板,在第一和第二硅基板中的至少一个上提供凸起特征,在第一和第二硅基板上形成金层, 并且将第一基板压靠在第二基板上,以在凸起特征周围形成热压接。 由相对表面上的凸起特征引起的高初始压力提供密封接合而不破坏凸起特征,而将凸起特征完全嵌入到相对表面中允许两个结合面接触。 这种大的接触面积提供高强度。

    SHIELDED DUAL SUBSTRATE MEMS PLATE SWITCH AND METHOD OF MANUFACTURE

    公开(公告)号:US20190333728A1

    公开(公告)日:2019-10-31

    申请号:US16392662

    申请日:2019-04-24

    Abstract: Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have at least one shunt bar located at a nodal line of a vibrational mode of the deformable plate, so that the shunt bar remains relatively stationary when the plate is vibrating in that vibrational mode. The second substrate may have semiconductor integrated circuits formed thereon. The second substrate may also have a shielding layer formed thereon, such as to improve the impedance characteristics of the device.

    DEVICE WITH SEPARATION LIMITING STANDOFF
    5.
    发明申请
    DEVICE WITH SEPARATION LIMITING STANDOFF 审中-公开
    具有分离限制的设备

    公开(公告)号:US20170062165A1

    公开(公告)日:2017-03-02

    申请号:US15232871

    申请日:2016-08-10

    CPC classification number: H01H59/0009 H01H2059/0072

    Abstract: An MEMS device, having two substantially parallel surfaces are separated by an initial distance. At least one of the surfaces includes a raised feature that limits the gap between the surfaces to less than the initial distance when an actuating voltage is applied. In some embodiments, the raised feature limits the gap to about 66% of the initial distance.

    Abstract translation: 具有两个基本上平行的表面的MEMS器件被分开初始距离。 至少一个表面包括凸起特征,其在施加致动电压时将表面之间的间隙限制为小于初始距离。 在一些实施例中,凸起特征将间隙限制为初始距离的约66%。

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