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    Fabrication method of semiconductor device
    41.
    发明授权
    Fabrication method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07595264B2

    公开(公告)日：2009-09-29

    申请号：US12017066

    申请日：2008-01-21

    Applicant: Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    Inventor： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    IPC: H01L21/44

    CPC classification number: H01L29/665 ,  H01L29/6659 ,  H01L29/7833

    Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a refractory metal alloy layer over a silicon-containing conductive layer. The refractory metal alloy layer is constituted of a first refractory metal and a second refractory metal. Thereafter, a cap layer is formed on the refractory metal alloy layer. A thermal process is performed so that the refractory metal alloy layer reacts with silicon of the silicon-containing conductive layer to form a refractory metal alloy salicide layer. Afterwards, an etch process with an etch solution is performed to removes the cap layer and the refractory metal alloy layer which has not been reacted and to form a protection layer on the refractory metal alloy salicide layer.

    Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在含硅导电层上形成难熔金属合金层。 难熔金属合金层由第一耐火金属和第二难熔金属构成。 此后，在难熔金属合金层上形成盖层。 进行热处理，使得难熔金属合金层与含硅导电层的硅反应形成难熔金属合金硅化物层。 之后，进行具有蚀刻溶液的蚀刻工艺以除去未被反应的盖层和难熔金属合金层，并在难熔金属合金自对准硅化物层上形成保护层。

    SILICIDATION PROCESS FOR MOS TRANSISTOR AND TRANSISTOR STRUCTURE
    43.
    发明申请
    SILICIDATION PROCESS FOR MOS TRANSISTOR AND TRANSISTOR STRUCTURE 审中-公开
    MOS晶体管和晶体管结构的硅化过程

    公开(公告)号：US20080224232A1

    公开(公告)日：2008-09-18

    申请号：US11687185

    申请日：2007-03-16

    Applicant: Chao-Ching Hsieh ,  Yu-Lan Chang ,  Chien-Chung Huang ,  Tzung-Yu Hung ,  Chun-Chieh Chang ,  Yi-Wei Chen

    Inventor： Chao-Ching Hsieh ,  Yu-Lan Chang ,  Chien-Chung Huang ,  Tzung-Yu Hung ,  Chun-Chieh Chang ,  Yi-Wei Chen

    IPC: H01L29/78 ,  H01L21/336

    CPC classification number: H01L21/28097 ,  H01L21/32105 ,  H01L21/3211 ,  H01L29/66507 ,  H01L29/66545

    Abstract: A silicidation process for a MOS transistor and a resulting transistor structure are described. The MOS transistor includes a silicon substrate, a gate dielectric layer, a silicon gate, a cap layer on the silicon gate, a spacer on the sidewalls of the silicon gate and the cap layer, and S/D regions in the substrate beside the silicon gate. The process includes forming a metal silicide layer on the S/D regions, utilizing plasma of a reactive gas to react a surface layer of the metal silicide layer into a passivation layer, removing the cap layer and then reacting the silicon gate into a fully silicided gate.

    Abstract translation: 描述了用于MOS晶体管和所得晶体管结构的硅化工艺。 MOS晶体管包括硅衬底，栅极电介质层，硅栅极，硅栅极上的覆盖层，硅栅极和帽层的侧壁上的间隔物，以及位于硅的旁边的衬底中的S / D区域 门。 该方法包括在S / D区上形成金属硅化物层，利用反应气体的等离子体将金属硅化物层的表面层反应成钝化层，去除覆盖层，然后使硅栅极反应成完全硅化物 门。

    Physical vapor deposition device for forming a metallic layer on a semiconductor wafer
    47.
    发明授权
    Physical vapor deposition device for forming a metallic layer on a semiconductor wafer 有权
    用于在半导体晶片上形成金属层的物理气相沉积装置

    公开(公告)号：US06371045B1

    公开(公告)日：2002-04-16

    申请号：US09360627

    申请日：1999-07-26

    Applicant: Kun-Chih Wang ,  Chao-Ching Hsieh

    Inventor： Kun-Chih Wang ,  Chao-Ching Hsieh

    IPC: C23C1600

    CPC classification number: H01J37/3266 ,  C23C14/046 ,  C23C14/165 ,  C23C14/351 ,  C23C14/358 ,  H01J37/34

    Abstract: The present invention provides a physical vapor deposition device for forming a metallic layer with a predetermined thickness on a semiconductor wafer. The PVD device comprises a chamber, a wafer chuck installed at the bottom end of the chamber through which the semiconductor wafer is hold horizontally, a metallic ion generator for generating metallic ions, an electric field generator for forming a vertical electric field above the wafer chuck that guides the metallic ions toward the wafer chuck, and a magnetic field generator. The magnetic field generator generates a magnetic field perpendicular to the direction of movement of the metallic ions to create a horizontal moving force on the metallic ions thus causing the metallic ions to deposit on the semiconductor wafer at a slant angle.

    Abstract translation: 本发明提供一种用于在半导体晶片上形成具有预定厚度的金属层的物理气相沉积装置。 PVD装置包括一个室，安装在室底部的晶片卡盘，半导体晶片通过该底座水平保持，用于产生金属离子的金属离子发生器，用于在晶片卡盘上方形成垂直电场的电场发生器 其将金属离子引向晶片卡盘，以及磁场发生器。 磁场发生器产生垂直于金属离子移动方向的磁场，以在金属离子上产生水平移动力，从而使金属离子以倾斜角沉积在半导体晶片上。

    METHOD FOR FORMING A PLUG STRUCTURE
    48.
    发明申请
    METHOD FOR FORMING A PLUG STRUCTURE 有权
    形成插管结构的方法

    公开(公告)号：US20110104895A1

    公开(公告)日：2011-05-05

    申请号：US13006358

    申请日：2011-01-13

    Applicant: Chao-Ching Hsieh

    Inventor： Chao-Ching Hsieh

    IPC: H01L21/768

    CPC classification number: H01L21/76814 ,  H01L21/76844 ,  H01L21/76877

    Abstract: A method for forming a plug structure includes the following steps. A substrate is provided. The substrate includes a MOS device with a source/drain region, a dielectric layer disposed on the MOS device, an opening defined in the dielectric layer, and a first glue layer disposed on a sidewall and a bottom of the opening. A portion of the first glue layer disposed at the bottom of the opening is punched through to expose the source/drain region. A barrier layer is formed over the substrate after the first glue layer is punched through. The opening is filled with a conductive structure, wherein the barrier layer disposed at the bottom of the opening is remained when the conductive structure is filled into the opening.

    Abstract translation: 形成插塞结构的方法包括以下步骤。 提供基板。 衬底包括具有源极/漏极区域的MOS器件，设置在MOS器件上的电介质层，限定在电介质层中的开口，以及设置在开口的侧壁和底部上的第一胶合层。 设置在开口底部的第一胶合层的一部分被穿孔以暴露源/漏区。 在穿过第一胶层之后，在衬底上形成阻挡层。 开口填充有导电结构，其中当导电结构填充到开口中时，设置在开口底部的阻挡层保留。

    SEMICONDUCTOR DEVICE
    49.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20080067684A1

    公开(公告)日：2008-03-20

    申请号：US11944462

    申请日：2007-11-23

    Applicant: Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    Inventor： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

    IPC: H01L23/48

    CPC classification number: H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.

    Abstract translation: 提供了包括至少一个导电结构的半导体器件。 导电结构包括含硅导电层，难熔金属硅化物层和保护层。 难熔金属硅化物层设置在含硅导电层上。 保护层设置在难熔金属硅化物层上。 还提供了包括至少一个导电结构的另一半导体器件。 导电结构包括含硅导电层，难熔金属合金自对准硅化物层和保护层。 难熔金属合金自对准硅化物层设置在含硅导电层的上方。 难熔金属合金自对准硅化物层由含硅导电层的硅与含有第一耐火金属和第二难熔金属的难熔金属合金层的反应形成。 保护层设置在难熔金属合金自对准硅化物层上。

    Method for fabricating metal silicide
    50.
    发明申请
    Method for fabricating metal silicide 审中-公开
    金属硅化物的制造方法

    公开(公告)号：US20080009134A1

    公开(公告)日：2008-01-10

    申请号：US11482604

    申请日：2006-07-06

    Applicant: Tsung-Yu Hung ,  Chun-Chieh Chang ,  Chao-Ching Hsieh ,  Yi-Wei Chen ,  Yu-Lan Chang ,  Chien-Chung Huang

    Inventor： Tsung-Yu Hung ,  Chun-Chieh Chang ,  Chao-Ching Hsieh ,  Yi-Wei Chen ,  Yu-Lan Chang ,  Chien-Chung Huang

    IPC: H01L21/4763 ,  H01L21/44

    CPC classification number: H01L21/28518

    Abstract: A method for fabricating a metal silicide is described. First, a silicon material layer is provided. An alloy layer is formed on the silicon material layer, and the alloy layer is made from a first metal and a second metal, wherein, the first metal is a refractory metal, and the second metal is selected from a group consisting of Pt, Pd, Mo, Ru, and Ta. A first rapid thermal process (RTP) is performed at a first temperature. A first cleaning process is performed by using a cleaning solution. A second RTP is performed at a second temperature, wherein the second temperature is higher than the first temperature. A second cleaning process is performed by using a cleaning solution including a hydrochloric acid.

    Abstract translation: 对金属硅化物的制造方法进行说明。 首先，提供硅材料层。 在硅材料层上形成合金层，合金层由第一金属和第二金属制成，其中第一金属为难熔金属，第二金属选自Pt，Pd ，Mo，Ru和Ta。 在第一温度下进行第一快速热处理（RTP）。 通过使用清洁溶液进行第一清洁处理。 在第二温度下执行第二RTP，其中第二温度高于第一温度。 通过使用包含盐酸的清洗溶液进行第二清洗处理。

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