公开(公告)号：US5824165A

公开(公告)日：1998-10-20

申请号：US526745

申请日：1995-09-01

Applicant: Johannes J. Bernardi ,  Gareth Thomas ,  Andreas R. Huetten

Inventor： Johannes J. Bernardi ,  Gareth Thomas ,  Andreas R. Huetten

IPC: H01F1/00 ,  H01L43/10 ,  H01F1/14

CPC classification number: B82Y25/00 ,  H01F1/0063 ,  H01F1/0072 ,  H01L43/10 ,  Y10S977/838 ,  Y10S977/934

Abstract: The inventive material exhibits giant magnetoresistance upon application of an external magnetic field at room temperature. The hysteresis is minimal. The inventive material has a magnetic phase formed by eutectic decomposition. The bulk material comprises a plurality of regions characterized by a) the presence of magnetic lamellae wherein the lamellae are separated by a distance smaller than the mean free path of the conduction electrons, and b) a matrix composition having nonmagnetic properties that is interposed between the lamellae within the regions. The inventive, rapidly quenched, eutectic alloys form microstructure lamellae having antiparallel antiferromagnetic coupling and give rise to GMR properties. The inventive materials made according to the inventive process yielded commercially acceptable quantities and timeframes. Annealing destroyed the microstructure lamellae and the GMR effect. Noneutectic alloys did not exhibit the antiparallel microstructure lamellae and did not possess GMR properties.

公开(公告)号：US20080218157A1

公开(公告)日：2008-09-11

申请号：US12152183

申请日：2008-05-13

Applicant: Mark C. Tondra ,  John M. Anderson ,  David J. Brownell ,  Anthony D. Popple

Inventor： Mark C. Tondra ,  John M. Anderson ,  David J. Brownell ,  Anthony D. Popple

IPC: G01N27/74

CPC classification number: G01V3/08 ,  G01R33/1276 ,  Y10S977/932 ,  Y10S977/933 ,  Y10S977/934

Abstract: A ferromagnetic thin-film based magnetic field detection system having a substrate supporting a magnetic field sensor in a channel with a first electrical conductor supported on the substrate positioned at least in part along the channel gap and in direct contact with at least some surface of the magnetic field sensor and a second electrical conductor supported on the substrate positioned at least in part along the channel gap in a region thereof adjacent to, but separated from, the magnetic field sensor.

Abstract translation: 一种基于铁磁薄膜的磁场检测系统，其具有在通道中支撑磁场传感器的基板，所述基板支撑在所述基板上，所述第一电导体至少部分地沿着所述通道间隙位于所述基板上，并且与所述第一电导体的至少一些表面直接接触 磁场传感器和支撑在基板上的第二电导体，其位于与磁场传感器相邻但与之隔离的区域中至少部分地沿着沟道间隙定位。

公开(公告)号：US20070015294A1

公开(公告)日：2007-01-18

申请号：US11522663

申请日：2006-09-18

Applicant: Cheng Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

Inventor： Cheng Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

IPC: H01L21/00

CPC classification number: H01L43/12 ,  H01L43/08 ,  Y10S977/934 ,  Y10S977/935

Abstract: An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta capping layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched capping layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.

Abstract translation: 在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。 作为溅射蚀刻的结果，Ta覆盖层具有光滑的表面，并且光滑表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层） 其超薄，光滑，并具有高击穿电压。 在Ta的溅射蚀刻的覆盖层上形成NiCr种子层。 在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。

公开(公告)号：US07133252B2

公开(公告)日：2006-11-07

申请号：US11257083

申请日：2005-10-25

Applicant: Hisashi Takano ,  Yasutaka Nishida ,  Tomohiro Okada ,  Masafumi Michizuki

Inventor： Hisashi Takano ,  Yasutaka Nishida ,  Tomohiro Okada ,  Masafumi Michizuki

IPC: G11B5/127

CPC classification number: G11B5/1278 ,  G11B5/012 ,  Y10S977/934 ,  Y10S977/935

Abstract: A magnetic head for perpendicular recording without writing from the lateral sides of a main pole and without erasing data on adjacent tracks. A magnetic disk storage apparatus using the magnetic head. The lateral side of the main pole of a magnetic head for perpendicular recording may have an inverted tapered shape obtained by forming a groove as a track portion to an inorganic insulating layer and then forming a magnetic layer and then flattening the upper surface. A leading edge, a trailing edge, or both lateral edges of the magnetic head may be tapered. The taper may be either smooth and linear or curved in profile.

Abstract translation: 用于垂直记录的磁头，无需从主极的侧面进行写入，而不会在相邻轨道上擦除数据。 一种使用该磁头的磁盘存储装置。 用于垂直记录的磁头的主极的侧面可以具有通过在无机绝缘层上形成作为轨道部分的槽然后形成磁性层然后使上表面变平而获得的倒锥形。 磁头的前缘，后缘或两个侧边缘可以是锥形的。 锥形可以是平滑的，线性的或弯曲的。

公开(公告)号：US20060103978A1

公开(公告)日：2006-05-18

申请号：US11257083

申请日：2005-10-25

Applicant: Hisashi Takano ,  Yasutaka Nishida ,  Tomohiro Okada ,  Masafumi Mochizuki

Inventor： Hisashi Takano ,  Yasutaka Nishida ,  Tomohiro Okada ,  Masafumi Mochizuki

IPC: G11B5/127

CPC classification number: G11B5/1278 ,  G11B5/012 ,  Y10S977/934 ,  Y10S977/935

Abstract: A magnetic head for perpendicular recording without writing from the lateral sides of a main pole and without erasing data on adjacent tracks. A magnetic disk storage apparatus using the magnetic head. The lateral side of the main pole of a magnetic head for perpendicular recording may have an inverted tapered shape obtained by forming a groove as a track portion to an inorganic insulating layer and then forming a magnetic layer and then flattening the upper surface. A leading edge, a trailing edge, or both lateral edges of the magnetic head may be tapered. The taper may be either smooth and linear or curved in profile.

Abstract translation: 用于垂直记录的磁头，无需从主极的侧面进行写入，而不会在相邻轨道上擦除数据。 一种使用该磁头的磁盘存储装置。 用于垂直记录的磁头的主极的侧面可以具有通过在无机绝缘层上形成作为轨道部分的槽然后形成磁性层然后使上表面变平而获得的倒锥形。 磁头的前缘，后缘或两个侧边缘可以是锥形的。 锥形可以是平滑的，线性的或弯曲的。

公开(公告)号：US20060081954A1

公开(公告)日：2006-04-20

申请号：US11241771

申请日：2005-09-29

Applicant: Mark Tondra ,  John Anderson ,  David Brownell ,  Anthony Popple

Inventor： Mark Tondra ,  John Anderson ,  David Brownell ,  Anthony Popple

IPC: H01L43/00

CPC classification number: G01V3/08 ,  G01R33/1276 ,  Y10S977/932 ,  Y10S977/933 ,  Y10S977/934

Abstract: A ferromagnetic thin-film based magnetic field detection system having a substrate supporting a magnetic field sensor in a channel with a first electrical conductor supported on the substrate positioned at least in part along the channel gap and in direct contact with at least some surface of the magnetic field sensor ands a second electrical conductor supported on the substrate positioned at least in part along the channel gap in a region thereof adjacent to, but separated from, the magnetic field sensor.

公开(公告)号：US20050254293A1

公开(公告)日：2005-11-17

申请号：US10844171

申请日：2004-05-12

Applicant: Cheng Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

Inventor： Cheng Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

IPC: G11C11/00 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L43/08 ,  Y10S977/934 ,  Y10S977/935

Abstract: An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.

Abstract translation: 在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。 作为溅射蚀刻的结果，Ta层具有光滑的表面，并且光滑的表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层），其中 具有超薄，光滑，且具有较高的击穿电压。 在Ta的溅射蚀刻层上形成NiCr种子层。 在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。

公开(公告)号：US06791795B2

公开(公告)日：2004-09-14

申请号：US10219283

申请日：2002-08-16

Applicant: Shigekazu Ohtomo ,  Moriaki Fuyama ,  Nobuo Yoshida ,  Hiroshi Fukui

Inventor： Shigekazu Ohtomo ,  Moriaki Fuyama ,  Nobuo Yoshida ,  Hiroshi Fukui

IPC: G11B5147

CPC classification number: G11B5/313 ,  G11B5/3109 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3967 ,  Y10S977/934 ,  Y10S977/935

Abstract: A lower magnetic pole front end layer is formed on a lower magnetic pole main layer, and a lower magnetic pole projection layer, a recording gap layer and an upper magnetic pole front end layer each having substantially the same planar shape are formed on a planar surface of the lower magnetic pole front end layer. Trimming of a lower electrode is not necessary, and track width accuracy can be drastically improved because a resist frame is formed on the planar surface. A length of the upper magnetic pole front end layer from an air bearing surface to a head rear direction is greater than a length of the lower magnetic pole front end layer, and the rear end portion of the lower magnetic pole front end layer substantially defines a gap depth.

Abstract translation: 在下磁极主层上形成下磁极前端层，在平面上形成有各自具有大致相同的平面形状的下磁极投影层，记录间隙层和上磁极前端层 的下磁极前端层。 不需要修整下电极，并且由于在平坦表面上形成抗蚀剂框架，所以可以显着提高轨道宽度精度。 上磁极前端层从空气轴承表面到头后方的长度大于下磁极前端层的长度，下磁极前端层的后端部分基本上限定为 间隙深度。

公开(公告)号：US06738236B1

公开(公告)日：2004-05-18

申请号：US09306484

申请日：1999-05-06

Applicant: Sining Mao ,  Anthony M. Mack ,  Brenda A. Everitt ,  Edward S. Murdock ,  Zheng Gao

Inventor： Sining Mao ,  Anthony M. Mack ,  Brenda A. Everitt ,  Edward S. Murdock ,  Zheng Gao

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10S977/934 ,  Y10T29/49046

Abstract: Disclosed are a spin valve magnetoresistive sensor and methods of fabricating the same. The sensor includes a free layer, a synthetic antiferromagnetic. (SAF) layer, a spacer layer positioned between the free layer and the SAF layer, and a Mn-based antiferromagnetic pinning layer in contact with the SAF layer. The SAF layer includes first and second ferromagnetic CoFe layers and an Ru spacer layer positioned between and directly in contact with the first and second CoFe ferromagnetic layers.

Abstract translation: 公开了一种自旋阀磁阻传感器及其制造方法。 传感器包括自由层，合成反铁磁体。 （SAF）层，位于自由层和SAF层之间的间隔层，以及与SAF层接触的Mn基反铁磁钉扎层。 SAF层包括位于第一和第二CoFe铁磁层之间并直接与第一和第二CoFe铁磁层接触的第一和第二铁磁CoFe层和Ru间隔层。

公开(公告)号：US06731473B2

公开(公告)日：2004-05-04

申请号：US09835246

申请日：2001-04-12

Applicant: Shaoping Li ,  Charles Potter

Inventor： Shaoping Li ,  Charles Potter

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3948 ,  G11B2005/3996 ,  Y10S977/934

Abstract: This invention presents a method and system for fabricating a dual GMR read head, which possess a pseudo spin valve structure. The spin valve structure includes a first thick Co-alloy based reference layer with first and second surfaces. The structure includes a first spacer layer including a first surface contacting the first surface of the first thick Co-alloy layer and a second surface contacting a first surface of a first free layer. The structure also includes a second spacer layer including a first surface separated from the second surface of the first free layer and a second surface contacting a first surface of a second thick Co-alloy layer. The thickness of the first and second thick Co-based alloy can be approximately between 30 and 55 Å.

Abstract translation: 本发明提供了一种制造双重GMR读取头的方法和系统，其具有伪自旋阀结构。 自旋阀结构包括具有第一和第二表面的第一厚Co基合金基准参考层。 该结构包括第一间隔层，第一间隔层包括与第一厚Co合金层的第一表面接触的第一表面和与第一自由层的第一表面接触的第二表面。 该结构还包括第二间隔层，其包括与第一自由层的第二表面分离的第一表面和与第二厚Co合金层的第一表面接触的第二表面。 第一和第二厚Co基​​合金的厚度可以在大约30和55之间。